A semiconductor package having one or more bifacial NAND memory devices includes an interposer including a plurality of multiplexers (MUX) integrally formed within the interposer, and a plurality of bifacial NAND memory devices disposed over the interposer. The bifacial NAND memory devices are electrically coupled to the MUX. Each bifacial NAND memory device includes a first NAND memory die disposed on a first planar surface, and a second NAND memory die disposed on a second planar surface, opposite the first NAND memory die, and adjacent the interposer. Each bifacial NAND memory device also includes a plurality of through silicon vias (TSVs) electrically coupling the first NAND memory die with the second NAND memory die, and the MUX.

Embodiments of the present disclosure relate to a semiconductor package, a method of forming the package and an electronic device. For example, the semiconductor package may comprise a first substrate assembly comprising a first surface and a second surface opposite the first surface. The semiconductor package may also comprise one or more chips connected or coupled to the first surface of the first substrate assembly by a first thermally and electrically conductive connecting material. In addition, the semiconductor package further comprises a second substrate assembly comprising a third surface and a fourth surface opposite the third surface, the third surface and the first surface being arranged to face each other, and the third surface being connected to one or more chips by a second thermally and electrically conductive connecting material. At least one of the first surface and the third surface is shaped to have a stepped pattern to match a surface of the one or more chips. Embodiments of the present disclosure may at least simplify the double-sided heat dissipation structure and improve the heat dissipation effect of the chip.

Embodiments of the present disclosure relate to a semiconductor package, a method of forming the package and an electronic device. For example, the semiconductor package may comprise a first substrate assembly comprising a first surface and a second surface opposite the first surface. The semiconductor package may also comprise one or more chips connected or coupled to the first surface of the first substrate assembly by a first thermally and electrically conductive connecting material. In addition, the semiconductor package further comprises a second substrate assembly comprising a third surface and a fourth surface opposite the third surface, the third surface and the first surface being arranged to face each other, and the third surface being connected to one or more chips by a second thermally and electrically conductive connecting material. At least one of the first surface and the third surface is shaped to have a stepped pattern to match a surface of the one or more chips. Embodiments of the present disclosure may at least simplify the double-sided heat dissipation structure and improve the heat dissipation effect of the chip.

An electronic device includes a substrate, an outer layer, a conductive line layer, and a switchable circuit chip. The substrate has a plurality of having a plurality of first vias. The outer layer is disposed on a side of the substrate and has a plurality of second vias. The first vias have a larger distribution density or quantity than the second vias, so that a part of the first vias are electrically connected to the second vias, and another part of the first vias are electrically floating. The conductive line layer is disposed on the outer layer and has a plurality of conductive traces. The conductive traces are electrically connected to the second vias. The switchable circuit chip is electrically connected to the first vias. The conductive traces are electrically connected to the switchable circuit chip. The switchable circuit chip is configured for controlling an electrical connecting relationship between the conductive traces and the first vias and an electrical connecting relationship among the conductive traces.

An electronic package structure and manufacturing method thereof. The electronic package structure includes a circuit board, an interposer, a chip, a circuit structure, and a coaxial conductive element. The interposer is disposed on the circuit board. The interposer has a through groove. The chip is disposed in the through groove and located on the circuit board to electrically connect with the circuit board. The circuit structure is disposed on the interposer. The coaxial conductive element penetrates the interposer to electrically connect the circuit structure and the circuit board. The coaxial conductive element includes a first conductive structure, a second conductive structure, and a first insulating structure. The second conductive structure surrounds the first conductive structure. The first insulating structure is disposed between the first conductive structure and the second conductive structure.

A semiconductor packaging assembly includes a redistribution layered structure having a plurality of device regions and a plurality of cutting regions separating the device regions, a plurality of recess structures respectively formed in the cutting regions, a plurality of chips respectively disposed in the device regions, and an encapsulating layer formed on the redistribution layered structure to fill the recess structures and enclose the chips.

A semiconductor packaging assembly includes a redistribution layered structure having a plurality of device regions and a plurality of cutting regions separating the device regions, a plurality of recess structures respectively formed in the cutting regions, a plurality of chips respectively disposed in the device regions, and an encapsulating layer formed on the redistribution layered structure to fill the recess structures and enclose the chips.

An electronic package is provided, in which a cover layer is embedded in a circuit structure to form a groove, and an electronic element is disposed on the cover layer in the groove. A cladding layer encapsulates the electronic element, and an external connection structure is disposed on the circuit structure and the cladding layer. Therefore, the electronic element is embedded in the groove, such that a thickness of the electronic package can be greatly reduced to meet the requirement of thinning.

An electronic package is provided, in which a cover layer is embedded in a circuit structure to form a groove, and an electronic element is disposed on the cover layer in the groove. A cladding layer encapsulates the electronic element, and an external connection structure is disposed on the circuit structure and the cladding layer. Therefore, the electronic element is embedded in the groove, such that a thickness of the electronic package can be greatly reduced to meet the requirement of thinning.

A chip-on-board module is provided. The chip-on-board module includes a chip and a substrate. The chip includes a plurality of chip contacts. The substrate includes a plurality of first leads and a plurality of second leads. The first leads and the second leads are coupled to a portion of the chip contacts. The first leads are arranged along a first axis. The second leads are arranged along a second axis. A first axis included angle is formed between the first axis and the second axis, and the first axis included angle is between 100 and 170.