The present invention provides a semiconductor packaging method and a semiconductor package, in which a second semiconductor structure and a third semiconductor structure are bonded to a first semiconductor structure so as to be adjacent to each other, with a gap being left therebetween, and a fluidic insulating layer is then filled in the gap. By virtue of the fluidity, the insulating layer, as formed, has a flat surface, which can avoid the issue of significant post-bonding warpage and/or stress non-uniformity and allows the resulting semiconductor package to have improved quality and reliability.

A semiconductor package includes a first semiconductor chip and a second semiconductor chip sequentially stacked, a first bump structure between the first and second semiconductor chips and connecting the first and second semiconductor chips, a first bump protection layer extending in a first direction between the first and second semiconductor chips and covering a side surface of the first bump structure, and a first adhesive layer between the first bump protection layer and the first semiconductor chip, wherein the first semiconductor chip includes a first upper conductive pad having a first edge portion inserted into the first bump structure, the first adhesive layer extends to cover a sidewall of the first upper conductive pad that is not inserted into the first bump structure, and a first thickness of the first upper conductive pad is greater than a second thickness of the first adhesive layer.

An array of heat-sinked power semiconductors that includes a power semiconductor and a heat sink. The power semiconductor has a power semiconductor die, a plurality of first terminals and a second terminal. The power semiconductor die has a plurality of semiconductor terminals. Each of the first terminals is electrically coupled to an associated one of the semiconductor terminals. The second terminal is a surface mount terminal and is electrically coupled to one of the first terminals. The heat sink has a heat sink body and a plurality of fins. The heat sink body has a base and an exterior surface. The base is fixedly coupled directly to the surface mount terminal. The exterior surface has a fin mount portion to which the fins extend. At least a portion of the fin-mount portion is oriented non-parallel to base.

A stacked package device has a first package and a second package vertically stacked and electrically connected to each other. One or each of the first package and the second package includes a first substrate, a second substrate and an intermediate substrate. A first flip-chip and a second flip-chip are respectively mounted on opposite surfaces of the first substrate and the second substrate. The intermediate substrate is electrically connected between the opposite surfaces of the first substrate and the second substrate for signal transmission between the first flip-chip and the second flip-chip. The use of the intermediate substrate avoids the structure damage resulting from thermal stress. Since no encapsulant is provided to cover each flip-chip, the problem of separation between the encapsulant and the substrates is avoided.

A semiconductor structure includes a first unit bonded assembly including a first memory die bonded to a first logic die by direct copper to copper bonding, where that the first logic die includes first through-substrate via structures laterally surrounded by first doped semiconductor well guard rings, and a second unit bonded assembly including a second memory die bonded to a second logic die by direct copper to copper bonding. The first unit bonded assembly is bonded to a second unit bonded assembly by solder balls.

A semiconductor package includes a redistribution structure including a redistribution layer, chip structures each having a first surface facing the redistribution structure, an interconnection structure between the chip structures and including a connection layer, at least one post configured to electrically connect the connection layer and the redistribution layer, and at least one connecting bump below the redistribution structure. Each chip structure includes semiconductor chips including a front end and a back end opposite to each other in a first direction, side ends opposite to each other in a second direction, and at least one connection pad configured to electrically connect to the connection layer and the redistribution layer, a gap-fill layer covering the semiconductor chips and defining the first surface of the chip structure, and at least one pillar in the gap-fill layer, extending from the at least one connection pad to the first surface.

An electrical device having a component which is at least partially covered with a gel, and a printed circuit board having an end face, on which a metal layer is applied, which metal layer covers the end face at least partially. The metal layer is at least partially covered by the gel, and the metal layer physically insulates the end face from the gel completely.

An electrical device having a component which is at least partially covered with a gel, and a printed circuit board having an end face, on which a metal layer is applied, which metal layer covers the end face at least partially. The metal layer is at least partially covered by the gel, and the metal layer physically insulates the end face from the gel completely.