A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, it includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface.

The present disclosure relates to a tape-guided pin insertion feeding mechanism. The mechanism includes: a pin tape material tray configured to store a pin tape; a feeding mechanism configured to drive the pin tape to move horizontally towards a cutting mechanism to feed material; and a pickup mechanism rotatably disposed on one side of the cutting mechanism. The cutting mechanism is configured to cut a single insertion pin from the pin tape.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A clamp assembly includes at least one clamp which is provided to clamp a workpiece in electroless plating, etching, electroplating or cleaning process. The clamp includes a base, a clamping element and a limiting element. The base is mounted on a carrier and includes a guide hole and a first limiting hole which are communicated with each other. The clamping element includes a guide rod and a second limiting hole, the guide rod is inserted into the guide hole to allow the second limiting hole located on the guide hole to be communicated with the first limiting hole. The limiting element is inserted into the first and second limiting holes to integrate the base with the clamping element for clamping the workpiece.

An assembly for monitoring a semiconductor device under test comprising a mill configured to mill the device, a sensor configured to measure an electrical characteristic of the device, and a computer configured to determine the amount of strain in the device from the electrical characteristic when the mill is milling the device and detect an endpoint of milling at a circuit within the device. In use the endpoints of the milling process of the semiconductor device are detected measuring an electrical characteristic of the device with a sensor during milling determining the amount of strain in the device from the electrical characteristic and detecting an endpoint of the milling process within the device based on the amount of strain.

An ultrasonic device is provided and includes an action member, a driving member and a rotating shaft connected to the driving member. The action member provides ultrasonic vibration and vibrates the driving member, so that the driving member oscillates to make the rotating shaft and a cutter oscillate in the same direction together, so the cutter can remove scrap by oscillating during the cutting operation.

A laser applying apparatus includes a beam spot shaper for shaping a spot of a laser beam into a slender spot and orienting the polarization direction of a linearly polarized laser beam of the laser beam along a longer side of the slender spot, and a spot control unit for positioning a P-polarized laser beam on slanted surfaces of a recess that is formed in a wafer by orienting the longer side of the slender spot transversely across projected dicing lines and for orienting a shorter side of the slender spot in a processing direction along the projected dicing lines. A method of processing a wafer includes a functional layer removing step that is a step of removing a functional layer on a semiconductor substrate of the wafer by applying laser beams to the projected dicing lines with the use of the laser applying apparatus. The functional layer removing step is carried out a plurality of times to remove the functional layer on the projected dicing lines.

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.

A polishing inspection system for semiconductor wafers, which is characterized by comprising a polishing head with a motor to drive the polishing head to rotate, a retaining ring fixed at a bottom of the polishing head, wherein the retaining ring comprises a plurality of grooves, a polishing pad positioned below the polishing head, and a laser sensor positioned beside the retaining ring, wherein the laser sensor is used for measuring the depth of the grooves on the retaining ring. The invention is helpful to monitor the groove depth of the retaining ring in real time and improve the reliability of the manufacturing process.