Methods of manufacturing a sealed electrical device for embedded integrated circuit (IC) chips are described, as well as the resulting devices themselves. The sealed electrical device is created by removing material from a substrate to form a pocket in the substrate. An unencapsulated, or bare, IC chip can be placed within the pocket with connection pads of the IC chip facing outward. A gap between the IC chip and a side of the pocket can be filled with a filler. An uncured polymer can be cast over the substrate, which can be allowed to cure into a flat polymer sheet. Conductive traces can be patterned on the polymer sheet and to the connection pads of the IC chip. The conductive traces can then be coated with polymer to form a ribbon cable. Substrate can then be removed from underneath the ribbon cable, leaving substrate around the pocket to protect the IC chip.

A semiconductor device has a joint part in which a first conducting part and a second conducting part are joined by a joint material. The first conducting part has a high wettability region and a low wettability region in a surface opposite to the second conducting part. The low wettability region is adjacent to the high wettability region to define an outer periphery of the high wettability region and has wettability lower than the high wettability region to the joint material. The high wettability region has an overlap region overlapping a formation region of the joint part in the second conducting part in a planar view, and a non-overlap region connected to the overlap region and not overlapping the formation region of the joint part in the second conducting part. The non-overlap region includes a holding region capable of holding the joint material that is surplus for the joint part.

An electronic device is provided. An example electronic device includes: a semiconductor body of Silicon Carbide, having a surface having a first portion of the surface that defines an active region of the electronic device and a second portion of the surface that is external to the active region; a metallization extending on the first portion of the surface of the semiconductor body; a passivation layer extending on part of the metallization; and an adhesion layer, based on one or more carbon allotropes, extending on the passivation layer.

According to one embodiment, a semiconductor device includes: a circuit board; a first semiconductor chip mounted on a face of the circuit board; a resin film covering the first semiconductor chip; and a second semiconductor chip having a chip area larger than a chip area of the first semiconductor chip, the second semiconductor chip being stuck to an upper face of the resin film and mounted on the circuit board. The resin film entirely fits within an inner region of a bottom face of the second semiconductor chip when viewed in a stacking direction of the first and second semiconductor chips.

A region of a sealing part is effectively utilized. A semiconductor device includes a semiconductor element, a substrate, a sealing part, and a cavity region. The substrate included in this semiconductor device is disposed adjacent to a bottom surface of the semiconductor element. The sealing part included in this semiconductor device is formed in a shape that covers an upper surface that is a surface facing the bottom surface of the semiconductor element, and seals the semiconductor element. The cavity region included in this semiconductor device is a region disposed in the sealing part and formed with a cavity.

Electronic module (1) including an encapsulation (20), a carrier substrate (10) enclosed by the encapsulation (20) and having a component side (25) which has a first metallization layer (15) and on which at least one first electronic component (30) is arranged, wherein at least one second metallization layer (35) for at least one second electronic component (31), in particular for controlling the first electronic component (30), is provided on an outer side (A) of the encapsulation (2), wherein the encapsulation (20) has at least one plated-through hole (5) for electrical connection, in particular for direct electrical connection, of the first electronic component (30) and the second electronic component (31).

A semiconductor device includes a lower substrate, a semiconductor element mounted on an upper surface of the lower substrate, an upper substrate disposed on an upper surface of the semiconductor element, one or more through holes extending through the upper substrate in a thickness-wise direction, an encapsulation resin disposed between the lower substrate and the upper substrate and encapsulating the semiconductor element, a wiring layer disposed on an upper surface of the upper substrate, and a covering resin covering the upper surface of the upper substrate and filling the through holes.

Disclosed are examples of multi-die modules that includes a die (e.g., a power amplifier) and an adjacent die placed side-by-side and bonded onto a substrate with a mold compound. The die (e.g., a switch or a low noise amplifier) may be double EMI shielded to minimize or even eliminate EMI/noise coupling with the adjacent die (e.g., switch, low noise amplifier, etc.). Another mold compound, which can be thermally conductive, may be provided to improve transfer of heat away from the die and/or the adjacent die.

A semiconductor device includes: a heat dissipation base; a case including an outer peripheral wall that has an inner surface facing an inside of the case and a wiring terminal provided integrally with the outer peripheral wall, the wiring terminal having an inner end portion, which is on one end of the wiring terminal and is exposed to the inside of the case from the inner surface of the outer peripheral wall; a sealing member sealing the inside of the case; and an adhesion member embedded in the inner surface of the case and having an adhesion surface exposed from the inner surface, the adhesion member and the heat dissipation base being on different sides of the inner end portion. The adhesion surface has higher adhesion to the sealing member than the outer peripheral wall.

A coating process of a coating liquid using a nozzle is performed on a coating target structure including a semiconductor element and a wire bonded to the semiconductor element by a wire bonding process. The nozzle has a transport wind generating function of generating a liquid transport wind in a spiral manner. Thus, the coating liquid discharged from the coating liquid supply port of the nozzle is supplied to the coating target structure along the directivity of the liquid transport wind. Then, a drying process is performed on the coating target structure to form a primary layer containing a silane coupling agent as a constituent material on an outer periphery of the wire.