Methods and systems for semiconductor processing are provided. Methods and systems include forming a selective layer of carbon-containing material on a photoresist material disposed over a surface of a substrate within a processing region of a semiconductor processing chamber. Methods and systems include where the layer of carbon-containing material is selectively formed over the photoresist material. Methods and systems include forming the layer of carbon-containing material by using one or more cycles of: providing a first molecular species that selectively couples with the photoresist material, and providing a second molecular species that selectively couples with the first molecular species.

An etching method is provided. This method includes (a) preparing a substrate, the substrate including an etching target film and a mask including an opening disposed on the etching target film, the etching target film including a recessed portion, and the mask configured to expose the recessed portion and; (b) forming a metal-containing film on a side wall of the recessed portion using a first plasma formed from a first processing gas including a metal-containing gas, the metal-containing gas including at least one metal selected from a group comprising ruthenium, tungsten, molybdenum, and titanium; and (c) etching the etching target film in the recessed portion using a second plasma formed from a second processing gas including a hydrogen fluoride gas.

Method of plasma dicing a semiconductor wafer. The method includes a step of providing a semiconductor wafer comprising a main silicon layer and a top silicon oxide layer covered with an organic soft mask. The mask defines a plurality of scribe line regions to be etched. The method includes a step of plasma etching to remove the top silicon oxide layer in the scribe line regions to expose the main silicon layer. The plasma etching is performed using an etch chemistry having gaseous SF.sub.6 gas mixed with gaseous Ar. The method includes a step of plasma etching to remove the main silicon layer in the scribe line regions to provide a plurality of individual semiconductor die.

Provided is a composition containing a solvent (I); and a cellulose derivative having a constituent unit or a salt thereof (II).

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes a first plurality of semiconductor fins having a longest dimension along a first direction. Adjacent individual semiconductor fins of the first plurality of semiconductor fins are spaced apart from one another by a first amount in a second direction orthogonal to the first direction. A second plurality of semiconductor fins has a longest dimension along the first direction. Adjacent individual semiconductor fins of the second plurality of semiconductor fins are spaced apart from one another by the first amount in the second direction, and closest semiconductor fins of the first plurality of semiconductor fins and the second plurality of semiconductor fins are spaced apart by a second amount in the second direction.

Provided are a hard mask including an amorphous boron nitride film and a method of fabricating the hard mask, and a patterning method using the hard mask. The hard mask is provided on a substrate and used for a process of patterning the substrate, and the hard mask includes an amorphous boron nitride film.

A plasma processing apparatus includes a chamber, a substrate support provided in the chamber, a gas supply that supplies a first processing gas and a second processing gas different from the first processing gas into the chamber, a plasma generator that generates a first plasma from the first processing gas and a second plasma from the second processing gas, and a controller. The controller executes a process including: (a) controlling the gas supply and the plasma generator so as to form a deposit on a first region of the substrate using the first plasma; and (b) controlling the gas supply and the plasma generator so as to etch a second region of the substrate using the second plasma.

The present disclosure provides a semiconductor device and a manufacturing method for same. The semiconductor device includes a substrate provided with: a plurality of first active structures, a first isolation structure isolating each of the first active structures, a second active structure, and second isolation structures; where each of the plurality of first active structures extends along a first direction, and the plurality of first active structures include first active segments and second active segments; the second active structure is in direct contact with the second active segments, a plurality of first trenches are opened within the second active structure in an extension direction of the first active structures, and the first trenches are located between the second active segments and an active boundary; and the second isolation structures are filled within the first trenches.

A method of manufacturing a semiconductor device including forming a target layer, forming a pre-modification carbon layer over the target layer, modifying and patterning the pre-modification carbon layer to form a post-modification carbon mask pattern by performing a modification process and a patterning process, and forming trenches in the target layer by performing an etching process using the post-modification carbon mask pattern as an etching mask.

An embodiment method includes: forming fins extending from a semiconductor substrate; depositing an inter-layer dielectric (ILD) layer on the fins; forming masking layers on the ILD layer; forming a cut mask on the masking layers, the cut mask including a first dielectric material, the cut mask having first openings exposing the masking layers, each of the first openings surrounded on all sides by the first dielectric material; forming a line mask on the cut mask and in the first openings, the line mask having slot openings, the slot openings exposing portions of the cut mask and portions of the masking layers, the slot openings being strips extending perpendicular to the fins; patterning the masking layers by etching the portions of the masking layers exposed by the first openings and the slot openings; and etching contact openings in the ILD layer using the patterned masking layers as an etching mask.