A conformal power delivery structure, a three-dimensional (3D) stacked die assembly, a system including the 3D stacked die assembly, and a method of forming the conformal power delivery structure. The power delivery structure includes a package substrate, a die adjacent to and electrically coupled to the package substrate; a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto; a second power plane at least partially within recesses defined by the first power plane and having a lower surface that conforms with the upper surface of the first power plane; and a dielectric material between the first power plane and the second power plane.

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.

A semiconductor device includes a semiconductor element, a sealing member, and a rewiring layer. The rewiring layer includes an insulating layer covering a front surface of the semiconductor element and a part of the sealing member, an electrode connected to the semiconductor element, and an externally-exposed layer being conductive and covering a portion of the electrode exposed from the insulating layer.

A fan-out wafer-level packaging (FOWLP) unit including a substrate, at least one first die, a first dielectric layer, a plurality of first conductive circuits, a second dielectric layer, a plurality of second conductive circuits, and at least one second die is provided. A range perpendicular to a second surface of the first die is defined as a chip area. The second dielectric layer is provided with a plurality of second slots allowing the second conductive circuit to expose and form bonding pads. The bonding pads located around the chip area are first bonding pads. The second die is disposed over the second dielectric layer by flip chip and electrically connected to the first die which is electrically connected with the outside by the first bonding pads. Thereby problems of conventional FOWLP generated during manufacturing of the conductive circuits including higher manufacturing cost and less environmental benefit can be solved.

A semiconductor package, as a semiconductor package mounted on a circuit board, includes including: a body portion including a semiconductor chip, and a first surface and a second surface opposite to each other; and a structure including n insulating layers stacked on at least one of the first surface and the second surface of the body portion, wherein the semiconductor package has a predetermined target coefficient of thermal expansion (CTE), and the n insulating layers and the body portion have a thickness and a CTE satisfying a condition that an effective CTE of the semiconductor package becomes equal to the predetermined target CTE.

A semiconductor device has a substrate and a first light sensitive material formed over the substrate. A plurality of first conductive posts is formed over the substrate by patterning the first light sensitive material and filling the pattern with a conductive material. A plurality of electrical contacts is formed over the substrate and the conductive posts are formed over the electrical contacts. A first electric component is disposed over the substrate between the first conductive posts. A plurality of second conductive posts is formed over the first electrical component by patterning a second light sensitive material and filling the pattern with conductive material. A first encapsulant is deposited over the first electrical component and conductive posts. A portion of the first encapsulant is removed to expose the first conductive posts. A second electrical component is disposed over the first electrical component and covered with a second encapsulant.

An electronic device includes a first semiconductor component, a second semiconductor component, an encapsulation layer, and a circuit layer. The encapsulation layer has a first side, and the encapsulation layer surrounds the first semiconductor component and the second semiconductor component. The circuit layer is disposed on the first side of the encapsulation layer. The encapsulation layer has a first thickness, and the first semiconductor component has a second thickness. The first thickness is greater than the second thickness. A difference between the first thickness and the second thickness is greater than half of the first thickness and less than three times the second thickness. In a top view, the encapsulation layer has a first area, the first semiconductor component has a second area, the second semiconductor component has a third area, and a sum of the second area and the third area is greater than half of the first area.

A microelectronic device is formed to include an embedded die substrate on an interposer; where the embedded die substrate is formed with no more than a single layer of transverse routing traces. In the device, all additional routing may be allocated to the interposer to which the embedded die substrate is attached. The embedded die substrate may be formed with a planarized dielectric formed over an initial metallization layer supporting the embedded die.

A package device and a manufacturing method thereof are provided. The package device includes a package structure, a redistribution layer, an underfill layer, a plurality of conductive pillars, another redistribution layer, and an encapsulant. The underfill layer is disposed between the package structure and the redistribution layer, and the conductive pillars and the package structure are disposed side by side between the redistribution layers. The encapsulant is disposed between the redistribution layers and surrounds the package structure and the conductive pillars.

A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.