A laser crystallization monitoring device includes a stage that supports a substrate, a laser beam generator that emits a laser beam to the substrate, a mirror that reflects the laser beam emitted from the laser beam generator and that rotates around a rotation axis, a first telecentric f-theta lens located on the laser beam path between the mirror and the substrate, a second telecentric f-theta lens through which the laser beam reflected from the substrate passes, and a monitor that inspects the laser beam passing through the second telecentric f-theta lens.

A wafer stacking method includes the following steps. A first wafer is provided. A second wafer is bonded to the first wafer to form a first wafer stack structure. A first edge defect inspection is performed on the first wafer stack structure to find a first edge defect and measure a first distance in a radial direction between an edge of the first wafer stack structure and an end of the first edge defect away from the edge of the first wafer stack structure. A first trimming process with a range of a first width is performed from the edge of the first wafer stack structure to remove the first edge defect. Herein, the first width is greater than or equal to the first distance.

A method of operating an electronic device that is configured to support manufacturing a semiconductor device includes (i) selecting a height of a stage of the electronic device that is configured to hold the semiconductor device, (ii) generating white light by using a light source of the electronic device, (iii) generating light of a selected wavelength by filtering the white light using a monochromater of the electronic device, (iv) emitting the light of the selected wavelength to the semiconductor device using a beam splitter of the electronic device, and (v) capturing reflection light reflected from the semiconductor device using a camera of the electronic device.

In a side view, when an angle 1 formed between the light axis of light incident on a surface of a silicon wafer and the surface (or an imaginary plane corresponding to the surface) is 67 to 78 and an angle formed between the surface of the silicon wafer (or an imaginary plane corresponding to the surface) and the detection optical axis of a photodetector is 2, 12 is 6 to 1 or 1 to 6.

Apparatus is described for performing simultaneous corona deposition and surface electric field induced second harmonic (EFISH) measurements. Example designs include systems including corona guns having a focus tube for deposition of corona charge with windows therein for passage of a laser beam incident on and reflected from a sample surface. Various designs may also employ masks proximal the distal end of the focusing tube and/or proximal the sample surface. In some implementations, the apparatus is used to make ungrounded and therefore non-invasive measurements, for example, on dielectric on semiconductor such as, e.g., interface state density (D.sub.it), flatband voltage (V.sub.fb) and/or lifetime measurements.

Methods and apparatus for controlling substrate temperature includes: measuring a substrate that has undergone a deposition process; analyzing measurements of the substrate to detect a defect of the substrate; and sending a feedback signal to modify a temperature control parameter of a temperature controller used in controlling a temperature of the substrate in the deposition process based on the analyzing if a defect is detected, and not sending a feedback signal to modify the temperature control parameter if a defect is not detected.

Methods and apparatus of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

A computer device is provided. The computer device includes at least one processor in communication with at least one memory device. The at least one processor is programmed to store, in the at least one memory device, a model for predicting post-grinding thickness of a wafer; receive scan data of a first inspection of a wafer; execute the model using the scan data as inputs to determine a final thickness of the wafer; compare the final thickness to one or more thresholds; determine if the final thickness exceeds at least one of the one or more thresholds; and cause a grinding station to be adjusted when it is determined that the final thickness exceeds at least one of the one or more thresholds.

The invention provides a semiconductor structure including alignment marks, which comprises a substrate defining a peripheral region, a first gate structure located in the peripheral region on the substrate, wherein the first gate structure has a left boundary and a right boundary, a dielectric layer covers the first gate structure in the peripheral region, a first left slot contact groove located in the dielectric layer on the left side of the first gate structure, a first right slot contact groove located in the dielectric layer on the right side of the first gate structure, and a first gate opening exposing a left boundary and a right boundary of the first gate structure, a boundary of the first left slot contact groove and a boundary of the first right slot contact groove.

A measuring apparatus includes a stage including a transmissive wafer chuck on which a sample wafer is provided, where the sample wafer includes a silicon substrate and at least one material layer on the silicon substrate, a light source unit including a light source configured to generate and output a femtosecond laser beam, and a confocal laser-induced terahertz (THz) emission microscopy (LTEM) unit configured to generate multi-photon excitation by splitting the femtosecond laser beam into four sub-laser beams and causing three sub-laser beams among the four sub-laser beams to be incident in an overlapping manner on a measurement position of the sample wafer, where the confocal LTEM unit is configured to generate the multi-photon excitation based on the three sub-laser beams being incident on a lower surface of the silicon substrate.