A mask-to-donor alignment method for laser-induced forward transfer includes (a) directing a laser beam onto a mask to produce a masked beam including one or more separate sub-beams, each sub-beam being transmitted by a respective aperture of the mask, (b) viewing each sub-beam, as transmitted by a donor substrate carrying one or more devices, to obtain imagery indicating in each sub-beam a shadow of a corresponding one of the one or more devices, and (c) based on the imagery, adjusting position of the masked beam and the donor substrate, relative to each other, so as to align each device with respect to the corresponding sub-beam. This in-situ observation of the relative alignment between the donor substrate and the masked beam produces an improved alignment accuracy, as compared to the indirect fiducial-based alignment method. Alignment accuracies better than 0.2 m, and associated sub-1 m LIFT positioning accuracies, have been demonstrated.

Systems and methods for using a design for manufacturing (DFM) structure to detect an overlay shift. The DFM structure comprises four branches with transistors and switches connected to a switch control. The first branch measures a current-voltage characteristic corresponding to the overlay shift in a first direction using a first switch. A second branch measures the current-voltage characteristic corresponding to the overlay shift in a second direction using a second switch. A third branch measures the current-voltage characteristic corresponding to the overlay shift in a third direction using a third switch. A fourth branch measures the current-voltage characteristic corresponding to the overlay shift in a fourth direction using a fourth switch. The switches are connected to a switch control configured to active each of the switches to measure the current-voltage characteristic, such that the value of the current-voltage characteristic indicates an overlay shift in an integrated circuit of a die.

A method for bonding wafers is provided. More specifically, the method provides for forming a hybrid bond between wafers that compensates for warpage and offset on each of the wafers being bonded.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

A processing method including a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a process substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the process substrate; a step that calculates warp amount of the process substrate based on the obtained shape data; a step that forms a resist film on a surface of the process substrate; a step that determines the supply position from which an organic solvent is supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the process substrate.

Provided is a semiconductor element including a semiconductor substrate; a semiconductor layer laminated to the semiconductor substrate, and having a circuit formed within the semiconductor layer; a conductive layer disposed on an opposite side of the semiconductor layer from the semiconductor substrate and including a part electrically connected to the circuit; and a conductive portion disposed between the semiconductor layer and the conductive layer, and electrically connected to the conductive layer. The conductive layer includes a check pattern not electrically connected to the circuit, and the conductive portion includes a superimposition portion superimposed on the check pattern as viewed in a thickness direction of the semiconductor substrate.

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device. A sample characterization system directs light onto a sample to produce second harmonic generation (SHG) signals and a detector generates detected SHG signals in response to receiving second harmonic generation (SHG) signals from the sample. A hardware processor receives detected SHG signals and determines a geometric feature of the sample or a variation in the geometric feature of the sample based on the detected SHG signals.

A wafer-on-wafer bonded memory and logic device can enable high bandwidth transmission of data directly between a memory die and a logic die. A memory device formed on a memory die can include many global input/output lines and many arrays of memory cells. Each array of memory cells can include respective local input/output (LIO) lines coupled to a global input/output line. A logic device can be formed on a logic die. A bond, formed between the memory die and the logic die via a wafer-on-wafer bonding process, can couple the many global input/output lines to the logic device.

Provided is a wafer treatment apparatus capable of measuring warpage of a wafer, the wafer treatment apparatus including a support plate providing a surface on which the wafer is supported, a temperature control channel mounted in the support plate to provide a path through which a fluid flows, and a plurality of warpage measurers disposed on the support plate and having lower ends mounted to be vertically spaced apart from an upper portion of the temperature control channel.

A substrate inspection method includes radiating light onto a substrate, extracting a spectrum representing an intensity of light according to a wavelength from a light reflected from the substrate, analyzing the extracted spectrum in units of each of an entire substrate, a shot, a chip, and a block, generating a spectrum distribution map indicating reflectivity for each wavelength band by using the analyzed spectrum, and extracting a weak point in the substrate based on the spectrum distribution map.