Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R doping can be achieved. Compared with single rare-earth element R doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.