A substrate processing system includes a coating apparatus configured to coat a photoresist film on a semiconductor substrate, an exposure apparatus configured to irradiate light onto the photoresist film to form a photoresist pattern region, a developing system configured to remove an unnecessary region from the photoresist film except for the photoresist pattern region to form a photoresist pattern, the developing system including a wet developing apparatus and a dry developing apparatus, the wet developing apparatus configured to remove the unnecessary region using a developing solution, the dry developing apparatus configured to remove the unnecessary region using a developing gas, a cleaning apparatus including a cleaning chamber and configured to remove an edge bead of the photoresist film or the photoresist pattern on an edge region of the semiconductor substrate, and a heating apparatus configured to heat the photoresist film or the photoresist pattern.

In one embodiment, a cleaning and drying module includes a process rotor having grip pins for holding a substrate. The process rotor rotates and moves between lowered and raised positions. A plurality of sweep arms each have a nozzle mechanism to apply a cleaning and/or drying fluid to the substrate. A collection rotor rotates synchronously with the process rotor. The collection rotor includes a collection weir defined by a bottom portion of the collection rotor and the inner surface. The collection weir collects fluids and particles from the process rotor and the substrate. Drain holes are positioned in the collection weir to drain fluids and particles from the collection weir. A rotor cover surrounds and extends above the sidewall of the collection rotor defining an annular volume between the rotor cover and the collection rotor. An exhaust draws air through the drain holes and receives the collected fluids and particles.

A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

A system may automatically conduct hygiene cycles for a confined space such an interior space of a box suitable for storing and/or carrying packaged food. The system may include a hygiene device that can be attached to the box to conduct the hygiene cycles and a user interface device that can wirelessly communicate with the hygiene device to control the conduction of the hygiene cycles. The system may also automatically collect information related to the hygiene cycles using the hygiene device and transmit the collected information to a network directly or through the user interface device.

A substrate processing method includes: receiving, by a transfer arm, a substrate from a batch processing section in which a plurality of substrates is collectively processed in a state where each of the plurality of substrates stands upright; disposing the substrate on a disposing unit including a pin, a first liquid film being formed on an upper surface of the substrate from a process in the batch processing section; supplying a pure water toward the upper surface of the substrate, thereby forming a second liquid film of the pure water on the upper surface of the substrate; stop supplying the pure water and maintaining the second liquid film on the upper surface of the substrate for a predetermined time, and transporting the substrate to a single wafer processing section in which the plurality of substrates are processed one by one in a horizontal state.

An object of the present invention is to provide a dry ice cleaning apparatus for a semiconductor wafer and a method for cleaning a semiconductor wafer that can reduce the amount of particles remaining on the surface of a semiconductor wafer, suppress a decrease of cleaning effects due to ice formation, and continuously and effectively clean a large amount of semiconductor wafers. The present invention provides a dry ice cleaning apparatus for a semiconductor wafer including a cleaning chamber (1) into which the semiconductor wafers (W) are sequentially carried in and which has an internal space (11) for cleaning the semiconductor wafers (W), an inject cleaning nozzle (5) that is disposed in the internal space (11) of the cleaning chamber (1) and injects the dry ice (D) toward the cleaning surface of the semiconductor wafer (w), and a transfer robot (2) that is disposed in the internal space (11) of the cleaning chamber (1) and sequentially carries the semiconductor wafers (W) from the outside of the cleaning chamber (1) into the internal space (11); and wherein while the transfer robot (2) holding the semiconductor wafer (W) carried into the internal space (11) non-horizontally, the inject cleaning nozzle (5) injects the dry ice (D) onto the semiconductor wafer (W).

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer of amorphous Al.sub.2O.sub.3 on the surface, and a second layer overlaying the first layer, the second layer including a solid solution of Y.sub.2O.sub.3ZrO.sub.2.

A substrate processing apparatus is disclosed that includes a first chamber having a first internal pressure, a second chamber connected to the first chamber and having a second internal pressure greater than the first internal pressure, a transfer mechanism located in the second chamber and configured to transfer a substrate, and a blower located in the second chamber and configured to blow air to the substrate.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system which includes an input portion configured to receive a first fluid from a first fluid source, and a heated flow portion configured to deliver a heated processing fluid including the first fluid to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or the one or more semiconductor processing chambers. A heat pump includes a source loop and a load loop, the source loop being thermally coupled to an external heat source. A first heat exchanger includes a first supply-side flow path in fluid communication with the input portion, and a first heat delivery-side flow path in fluid communication with the load loop such that the heat exchanger heats the first fluid before the first fluid enters the heated flow portion.

A system includes one or more semiconductor processing chambers, and a processing fluid supply system including an input portion configured to receive a first fluid from a first fluid source, a heater fluidly coupled to the input portion and configured to heat the first fluid, and a heated flow portion fluidly coupled to the heater and configured to deliver a heated processing fluid including the first fluid heated by the heater to the one or more semiconductor processing chambers. A waste system is configured to receive hot waste fluid from the heated flow portion and/or a semiconductor processing chamber. A heat exchanger includes a supply-side flow path in fluid communication with the input portion and a heat delivery-side flow path in fluid communication with the waste system. The heat exchanger is configured to transfer thermal energy from the waste system to the input portion to heat the first fluid.