Provided are a chip matrix, a sequencing chip, and a manufacturing method thereof. The chip matrix includes: a wafer layer (111), the wafer layer (111) having cutting lines that are evenly distributed thereon; a first silicon oxide layer (112), the first silicon oxide layer (112) being made of silicon oxide and formed on an upper surface of the wafer layer (111); a transition metal oxide layer (113), the transition metal oxide layer (113) being made of transition metal oxide and formed on an upper surface of the first silicon oxide layer (112). The chip matrix has characteristics such as resistances against high temperature, high humidity and other harsh environments. Meanwhile, by changing pH, surfactant and other components of a solution containing sequences to be sequenced, a surface functional region of the chip matrix can specifically adsorb a sequence to be sequenced.

A system and method for forming a film that includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber includes a plasma confinement system. The plasma confinement system includes a chamber wall liner having a ring shaped body. The chamber wall liner has an inner wall, a slit opening formed through the inner wall and sized for a substrate to pass therethrough the slit opening, and a first cavity having a back wall. The plasma confinement system includes a plasma confinement assembly. The plasma confinement assembly has a first magnet disposed in the first cavity adjacent the back wall, and a first window disposed in the first cavity between the first magnet and the inner wall, wherein the first window seals the first magnet from an outside environment.

A method for depositing a film includes conducting electron-enhanced chemical vapor deposition with at least one hydride precursor, at least one reactive background gas, and electrons to deposit a film on a substrate with a positive substrate voltage. In an embodiment, the method is a method for depositing a silicon film, including conducting electron-enhanced chemical vapor deposition with at least one Si precursor, at least one reactive background gas, and electrons to deposit a silicon film on a substrate with a positive substrate voltage. In the embodiment, the at least one Si precursor can include Si.sub.2H.sub.6 and the at least one reactive background gas can include H.sub.2.

Exemplary processing methods may include forming a plasma of a silicon-containing precursor. The methods may include depositing a flowable film on a semiconductor substrate with plasma effluents of the silicon-containing precursor. The processing region may be at least partially defined between a faceplate and a substrate support on which the semiconductor substrate is seated. A bias power may be applied to the substrate support from a bias power source. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include etching the flowable film from a sidewall of the feature within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining flowable film within the feature defined within the semiconductor substrate with plasma effluents of the hydrogen-containing precursor.

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Methods of depositing silicon-containing films by plasma-enhanced atomic layer deposition (PEALD) are described and can include one or more techniques to provide a chemical vapor deposition (CVD)-type component.

Disclosed is a method for manufacturing a zeroth interlayer dielectric, including: step 1: providing a semiconductor substrate subjected to a process of forming a contact etch stop layer; step 2: performing a first deposition process using a HARP process, to form a first oxide layer fully filling a spacing region; step 3: polishing the first oxide layer using a first chemical mechanical polishing process; step 4: performing wet etch to lower a top surface of the first oxide layer and form a first groove at the top of the spacing region; step 5: performing a second deposition process using an HDP CVD process, to form a second oxide layer fully filling the first groove; and step 6: polishing the second oxide layer using a second chemical mechanical polishing process, which is stopped on a surface of a first gate material layer of a first gate structure.

Embodiments of the present disclosure generally relate to a method of processing a substrate. The method includes exposing the substrate positioned in a processing volume of a processing chamber to a hydrocarbon-containing gas mixture, exposing the substrate to a boron-containing gas mixture, and generating a radio frequency (RF) plasma in the processing volume to deposit a boron-carbon film on the substrate. The hydrocarbon-containing gas mixture and the boron-containing gas mixture are flowed into the processing volume at a precursor ratio of (boron-containing gas mixture/((boron-containing gas mixture)+hydrocarbon-containing gas mixture) of about 0.38 to about 0.85. The boron-carbon hardmask film provides high modulus, etch selectivity, and stress for high aspect-ratio features (e.g., 10:1 or above) and smaller dimension devices (e.g., 7 nm node or below).

A method for improving the elastic modulus of dense organosilica dielectric films (k2.7) without negatively impacting the film's electrical properties and with minimal to no reduction in the carbon content of the film. The method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a mixture of an alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes; and applying energy to the gaseous composition comprising the mixture of the alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from 2.70 to 3.30, an elastic modulus of from 6 to 30 GPa, and an at. % carbon from 10 to 45 as measured by XPS.

A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H.sub.2 gas under Si-excess atmosphere within a temperature range of 1000 C. to 1350 C., a step of depositing, by a CVD method, a SiO.sub.2 film 2 on the SiC substrate 1 at such a temperature that the SiC substrate 1 is not oxidized, and a step of thermally treating the SiC substrate 1, on which the SiO.sub.2 film 2 is deposited, in NO gas atmosphere within a temperature range of 1150 C. to 1350 C.