A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

A method is provided for fabricating a chip package comprising one or more chips including a photonic integrated circuit (PIC) comprising one or more optical modulators. The method includes forming a redistribution layer (RDL). The method also includes forming a dam on a bonding side of the RDL. The method also includes arranging the one or more chips on the bonding side of the RDL and bonding the one or more chips to the RDL. The dam surrounds an empty space between the RDL and the one or more optical modulators. The method also includes dispensing underfill material between at least some of the one or more chips and the RDL. The dam prevents the underfill material from entering the empty space between the RDL and the one or more optical modulators.

A method of forming a semiconductor device includes the following steps. A die and a first through via aside the die are formed. An encapsulant is formed to encapsulate the die and the first through via, wherein the encapsulant is physically connected to a sidewall of the first through via and a sidewall of the die. A warpage controlling layer is formed over the encapsulant and the die. A first conductive connector is formed on the first through via to electrically connect to the first through via.

A variety of footed and leadless semiconductor packages, with either exposed or isolated die pads, are described. Some of the packages have leads with highly coplanar feet that protrude from a plastic body, facilitating mounting the packages on printed circuit boards using wave-soldering techniques.

An electronic package is provided, in which an electronic element is disposed on a carrier structure, and an interposer is stacked on the electronic element. Further, a wire is connected to the interposer and grounds the carrier structure, such that the wire and the interposer surround the electronic element. Therefore, the wire can be used as a shielding element when the electronic package is in operation to prevent the electronic element from being subjected to external electromagnetic interference.

A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

An electronic device and a method of manufacturing an electronic device. As non-limiting examples, various aspects of this disclosure provide various methods of manufacturing electronic devices, and electronic devices manufactured thereby, that comprise utilizing metal studs to further set a semiconductor die into the encapsulant.

A package includes a corner, a device die, a molding material molding the device die therein, and a plurality of bonding features. The plurality of bonding features includes a corner bonding feature at the corner, wherein the corner bonding feature is elongated. The plurality of bonding features further includes an additional bonding feature, which is non-elongated.

A semiconductor chip includes a first electrode provided farther in a first direction than the first lead frame and is electrically coupled to a first lead frame, and a second electrode. A first conductor electrically coupled to the second electrode. A second lead frame is aligned with the first lead frame at a position farther in a second direction than the first lead frame and includes a first terminal and a plate portion connected to the first terminal. The plate portion is electrically coupled to the first conductor and has an inclination over a first surface on a side in the first direction and a first side surface on a side in the second direction. A resin covers a part of the first lead frame, the semiconductor chip, the first conductor, and the plate portion and a part of the first terminal.

Chip packages are described herein that includes integrated passive devices embedded in a core of a substrate of the chip package, such as a package substrate or an interposer, that shield routings coupled to inductors from adjacent through-substrate conductive paths (e.g., vias). In one example, a chip package includes an integrated circuit (IC) die mounted to a substrate. A core of the substrate has a plurality of inductor routing vias, a plurality of signal transmission vias, and a plurality of ground and power routing vias. A first integrated passive device (IPD) is disposed in the core and separates at least one of the plurality of inductor routing vias from an adjacent via, the adjacent via being one of the plurality of signal transmission vias or one of the plurality of ground and power routing vias.