The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.

A substrate bonding device including: a bonding chamber including (i) a loading region in which a lower substrate is loaded, (ii) a bonding region in which an upper substrate is bonded to the lower substrate, and (iii) an unloading region spaced from the loading region and unloading the lower substrate to which the upper substrate is bonded in an internal space; a plurality lower chucks configured to support the lower substrate, each lower chuck moveable to be sequentially disposed in the loading region, the bonding region, and the unloading region; and an upper chuck configured to support the upper substrate to face the lower substrate in the bonding region.

A bonding apparatus and a bonding method are provided. The bonding apparatus includes: a machine base, including a movable pick-up platform; and a grating assembly, configured to determine displacement information of the movable pick-up platform along a first direction and displacement information of the movable pick-up platform along a second direction. Based on the displacement information along the first direction and the displacement information along the second direction, the grating assembly is further configured to determine coordinate information of the movable pick-up platform.

A bonding apparatus includes a first holder, a second holder, a mover, an optical system, an adjusting device and control circuitry. The first holder holds a first substrate. The second holder holds a second substrate. The mover brings a first one of the first holder and the second holder closer to a second one of the first holder and the second holder. The optical system images alignment marks provided on the first substrate and the second substrate. The adjusting device adjusts a depth of focus of the optical system. The control circuitry performs an approach processing and an imaging processing. In the approach processing, the control circuitry brings the first one closer to the second one. In the imaging processing, the control circuitry images, during the approach processing, the alignment marks, after locating the first substrate and the second substrate within the depth of focus of the optical system.

A substrate mounting method, performed by a mounting apparatus includes providing a stack including a substrate, a first protective member, and a second protective member, the first protective member being an outermost layer, cutting the stack to obtain at least one chip, removing the first protective member from the at least one chip, heating at least a portion of the second protective member, holding the at least one chip by attaching a bonding head of the mounting apparatus to the heated second protective member, and bonding the at least one chip to a base substrate using the bonding head.

A laser pressure head module including: a pressure member including: a first light-transmitting member; a second light-transmitting member; and a sealed space between the first light-transmitting member and the second light-transmitting member; and a gas supply unit to supply gas to the sealed space to generate a pressing force. The second light-transmitting member is to be expanded or moved in an external direction by the pressing force.

A method is provided for etching a silicon carbide accretion from one or more workpieces of a reaction chamber for the deposition of silicon carbide layers on a substrate. The method comprises the steps of: (I) providing a silicon carbide accretion on one or more workpieces of a reaction chamber of a reactor for deposition of silicon carbide; (II) executing at least one cycle of an etching process. Further provided is a reactor adapted to execute the method.

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates includes: an equipment front end module (EFEM) having one or more loadports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, wherein each of the plurality of automation modules include a transfer chamber and one or more process chambers coupled to the transfer chamber, wherein the transfer chamber includes a buffer, and wherein the transfer chamber includes a transfer robot configured to transfer the one or more types of substrates, wherein at least one of the plurality of automation modules include a bonder chamber and at least one of the plurality of automation modules include a wet clean chamber.

A wafer shape metrology system includes a wafer shape metrology sub-system configured to perform stress-free shape measurements on an active wafer, a carrier wafer, and a bonded device wafer. The active wafer includes functioning logic circuitry and the carrier wafer is electrically passive. The wafer shape metrology system includes a controller communicatively coupled to the wafer shape metrology sub-system. The controller is configured to receive stress-free shape measurements; determine overlay distortion between features on the active wafer and the carrier wafer; and convert the overlay distortion to a feed-forward correction for one or more lithographic scanners. The controller is also configured to determine a control range for a bonder or lithography scanner; predict an overlay distortion pattern; calculate an optimal control signature based on a minimal achievable overlay; and provide a feed-forward correction to the bonder or lithography scanner based on the calculated optimal control signature.

Provide is a wafer bonding device. The wafer bonding device includes a bonding unit including a first chuck and a second chuck that are arranged to face each other, a light source arranged on sides of the first chuck and the second chuck and configured to radiate light onto a region between the first chuck and the second chuck, a plurality of cameras arranged on an opposite side of the light source with the first chuck and the second chuck therebetween and configured to capture images of a region irradiated with the light emitted from the light source, and a 3D image generator configured to generate three-dimensional image data representing a bonding scene of a first wafer and a second wafer.