A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method further includes forming a conductive material on the auxiliary layer. The conductive material incudes AlSiCu, AlSi or tungsten, and is electrically connected to the part of the semiconductor structure via the auxiliary layer.

A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.

The present disclosure describes a method for forming a nitrogen-rich protective layer within a low-k layer of a metallization layer to prevent damage to the low-k layer from subsequent processing operations. The method includes forming, on a substrate, a metallization layer having conductive structures in a low-k dielectric. The method further includes forming a capping layer on the conductive structures, where forming the capping layer includes exposing the metallization layer to a first plasma process to form a nitrogen-rich protective layer below a top surface of the low-k dielectric, releasing a precursor on the metallization layer to cover top surfaces of the conductive structures with precursor molecules, and treating the precursor molecules with a second plasma process to dissociate the precursor molecules and form the capping layer. Additionally, the method includes forming an etch stop layer to cover the capping layer and top surfaces of the low-k dielectric.

In an embodiment, a method for nitriding a substrate is provided. The method includes flowing a nitrogen-containing source and a carrier gas into a plasma processing source coupled to a chamber such that a flow rate of the nitrogen-containing source is from about 3% to 20% of a flow rate of the carrier gas; generating an inductively-coupled plasma (ICP) in the plasma processing source by operating an ICP source, the ICP comprising a radical species formed from the nitrogen-containing source, the carrier gas, or both; and nitriding the substrate within the chamber, wherein nitriding includes operating a heat source within the chamber at a temperature from about 150 C. to about 650 C. to heat the substrate; maintaining a pressure of the chamber from about 50 mTorr to about 2 Torr; introducing the ICP to the chamber; and adjusting a characteristic of the substrate by exposing the substrate to the radical species.

A microelectronic device including an isolation device with a stabilized dielectric. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The dielectric sidewall of the inorganic dielectric plateau is stabilized in a nitrogen containing plasma which forms a SiO.sub.xN.sub.y surface on the dielectric sidewall of the inorganic dielectric plateau. The SiO.sub.xN.sub.y surface on the dielectric sidewall of the inorganic dielectric plateau reduces ingress of moisture into the dielectric stack of the inorganic dielectric plateau.

A method includes providing a semiconductor substrate and forming a fin protruding from the semiconductor substrate. The method includes forming a silicon-containing layer over the fin. The method further includes patterning the silicon-containing layer to form a gate structure over the fin, where patterning the silicon-containing layer is implemented using an etchant and a passivant that includes a silicon-containing gas and a nitrogen-containing gas.