A semiconductor package carrier structure is provided and includes a substrate body, a dielectric material, and a patterned circuit layer. The substrate body has a plurality of openings, a plurality of conductive pillars, and at least one die placement portion. The dielectric material is disposed in the plurality of openings. The patterned circuit layer is disposed on a surface of the substrate body. Side surfaces of the plurality of conductive pillars and the die placement portion are all in a concave arc shape. The patterned circuit layer includes a die placement pad corresponding to the die placement portion and a plurality of bonding pads corresponding to the plurality of conductive pillars. A method of manufacturing the semiconductor package carrier structure is further provided.

A semiconductor package includes a substrate including a die pad, first and second discrete transistor dies mounted on the die pad, an encapsulant body that encapsulates the first and second discrete transistor dies, and a plurality of leads that are exposed from the encapsulant body, wherein the first and second discrete transistor dies are connected in parallel with one another by electrical interconnections that electrically connect common terminals of the first and second discrete transistor dies to one of the leads, and wherein at least one of the electrical interconnections has a balanced configuration that provides substantially identical electrical impedance as between the common terminals of the first and second discrete transistor dies and the lead to which they are connected.

A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

An electronic device includes: an insulating substrate including an obverse surface facing a thickness direction; a wiring portion formed on the substrate obverse surface and made of a conductive material; a lead frame arranged on the substrate obverse surface; a first and a second semiconductor elements electrically connected to the lead frame; and a first control unit electrically connected to the wiring portion to operate the first semiconductor element as a first upper arm and operate the second semiconductor element as a first lower arm. The lead frame includes a first pad portion to which the first semiconductor element is joined and a second pad portion to which the second semiconductor element is joined. The first and second pad portions are spaced apart from the wiring portion and arranged in a first direction with a first separation region sandwiched therebetween, where the first direction is orthogonal to the thickness direction. The first control unit is spaced apart from the lead frame as viewed in the thickness direction, while overlapping with the first separation region as viewed in a second direction orthogonal to the thickness direction and the first direction.

A package includes a first carrier including a component mounting area, a second carrier including at least one lead section, at least one electronic component mounted on the component mounting area, and an encapsulant encapsulating at least part of the at least one electronic component, encapsulating at least part of the first carrier including encapsulating the entire sidewalls of the first carrier, and encapsulating part of the second carrier, wherein the first carrier is assembled with the second carrier so that the at least one electronic component and/or the first carrier is electrically connected with the at least one lead section, and wherein the first carrier has a first thickness and the second carrier has a second thickness being smaller than the first thickness.

A semiconductor device and method is disclosed. In one example, the semiconductor device includes a first diepad including a first mounting surface and a first elevated portion elevated with respect to the first mounting surface. A first semiconductor chip is mounted on the first mounting surface. The semiconductor device further includes a second diepad including a second mounting surface. A second semiconductor chip is mounted on the second mounting surface and includes an electrical contact arranged on a top surface of the second semiconductor chip facing away from the second mounting surface. The semiconductor device further includes a first electrical connection element electrically connecting the electrical contact of the second semiconductor chip and the first elevated portion of the first diepad.

A pre-molded leadframe includes a laminar structure having empty spaces therein and a first thickness with a die pad having opposed first and second die pad surfaces. Insulating pre-mold material is molded onto the laminar structure. The pre-mold material penetrates the empty spaces and provides a laminar pre-molded substrate having the first thickness with the first die pad surface left exposed. The die pad has a second thickness that is less than the first thickness. One or more pillar formations are provided protruding from the second die pad surface to a height equal to a difference between the first and second thicknesses. With the laminar structure clamped between surfaces of a mold, the first die pad surface and pillar formations abut against the mold surfaces. The die pad is thus effectively clamped between the clamping surfaces countering undesired flashing of the pre-mold material over the first die pad surface.

A method of manufacturing a semiconductor device with an attached battery is provided. The method includes affixing a semiconductor die to a die pad region of a first battery lead of a leadframe. The first battery lead of the leadframe is separated from a second battery lead of the leadframe. An encapsulant encapsulates the semiconductor die and portions of the first and second battery leads of the leadframe. The battery is affixed to an exposed portion of the first battery lead of the leadframe such that a first terminal of the battery is conductively connected to the first battery lead. An exposed portion of the second battery lead of the leadframe is bent to overlap a top surface portion of the battery such that a second terminal of the battery conductively connected to the second battery lead.

A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

Semiconductor chips to be singulated to individual semiconductor devices are arranged onto respective adjacent areas of a mounting substrate such as a pre-molded leadframe. The mounting substrate is made of a laminar, electrically conductive sculptured structure with molded electrically insulating material. Electrically conductive side formations in the adjacent areas of the mounting substrate include first and second pads at front and back surfaces, respectively, of the mounting substrate. The first contact pads at the front surface of the substrate include narrowed portions having side recesses. The second contact pads at the back surface of the substrate include widened portions having side extensions adjacent the side recesses. The electrically insulating material extends into the side recesses to provide anchoring formations of the insulating material to the electrically conductive sculptured structure of the mounting substrate.