Patent classifications
H10W70/411
Semiconductor device with x-shaped die pad to reduce thermal stress and ion migration from bonding layer
A semiconductor device includes: a supporting member having a wiring including a die-pad; a semiconductor element bonded to the die-pad; a wire bonded to the wiring and the semiconductor element; and a bonding layer that has a conductivity and bonds the die-pad and the semiconductor element. When viewed in a thickness direction of the semiconductor element, the die-pad includes a first region included inside a peripheral edge of the semiconductor element and a second region that is connected to the first region and extends farther then the peripheral edge of the semiconductor element. When viewed in the thickness direction, the wire is separated from the second region.
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a support member, a semiconductor element and a sealing member. The semiconductor element is disposed on a first side in a thickness direction relative to the support member. The sealing member covers a part of the support member and the semiconductor element. The support member has a first surface facing a second side in the thickness direction and exposed from the sealing member. The first surface is formed with a first uneven region. In an example, the first uneven region has an arithmetic mean roughness between 0.2 m and 13 m. In an example, the first uneven region includes a plurality of uneven lines in an arc shape.
INTEGRATED CIRCUIT PACKAGE WITH LEADFRAME HAVING CENTRAL OPENING FILLED WITH A DROP-IN DIE PAD
An integrated circuit package includes a leadframe with leads delimiting a center cavity. The leads of the leadframe have upper surfaces with a surface texture or finish having a first surface roughness. A drop-in die pad is installed within the center cavity. The drop-in die pad has an upper surface with a surface texture or finish having a second surface roughness that is rougher than the first surface roughness. An integrated circuit die is mounted to the upper surface of the drop-in die pad and electrical connections are formed between bonding pads of the integrated circuit die and the leads of the leadframe. An encapsulation body encapsulates the leadframe, drop-in die pad and electrical connections.
PACKAGE MANUFACTURABLE USING THERMOPLASTIC STRUCTURE COVERING A COMPONENT ASSEMBLY SECTION WITHOUT COVERING A LEAD SECTION
A package and method is disclosed. In one example, the package comprises a component assembly section, at least one electronic component being assembled with the component assembly section, at least one lead section being electrically coupled with the at least one electronic component and/or with the component assembly section, an encapsulant at least partially encapsulating the at least one electronic component and partially encapsulating the component assembly section and the at least one lead section so that part of the component assembly section and part of the at least one lead section are exposed beyond the encapsulant. A thermoplastic structure covers an exposed area of the component assembly section without covering an exposed area of the at least one lead section.
Semiconductor Package with Selective Surface Roughening
A method of forming a semiconductor package includes providing a metal lead frame comprising a die pad and a plurality of leads, mounting a high-voltage die on an upper surface of the die pad such that a load terminal of the high-voltage die is electrically connected to the die pad, mounting an electrical isolation pad on the die pad, and mounting a low-voltage die on the electrical isolation pad, wherein at least one of: mounting the high-voltage die, mounting the electrical isolation pad, and mounting the low-voltage die includes performing a float-limiting attachment process, wherein the float-limiting attachment process comprises performing a surface roughening process to an attachment surface that forms a border of roughened surface around a mounting area, arranging an attachment material within the mounting area with a mounting element disposed thereon, and liquifying the attachment material with the mounting element disposed thereon.
Semiconductor package having a lead frame and a clip frame
A molded semiconductor package includes a lead frame having one or more first leads monolithically formed with a die pad and extending outward from the pad in a first direction. A semiconductor die is attached to the die pad at a first side of the die. A metal clip of a clip frame is attached to a power terminal at a second side of the die. One or more second leads monolithically formed with the metal clip extend outward from the clip in a second direction different than the first direction. A mold compound embeds the die. The first lead(s) and the second lead(s) are exposed at different sides of the mold compound and do not vertically overlap with one another. Within the mold compound, the clip transitions from a first level above the power terminal to a second level in a same plane as the leads.
Lead frame, semiconductor device, and lead frame manufacturing method
A lead frame includes a support portion that has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, a lead, and a heat sink that is welded to the support portion in the second part. A method of manufacturing the lead frame includes forming, from a metal plate, a frame member that includes a support portion and a lead, where the support portion has one end on which a first part and a second part that has a smaller thickness than the first part are arranged, and welding a heat sink to the support portion in the second part.
SEMICONDUCTOR DEVICE AND VEHICLE
A semiconductor device includes a semiconductor element, a first lead including a die pad portion, and a sealing resin covering the semiconductor element and a portion of the first lead. The die pad portion includes a first obverse surface facing a first side in a thickness direction and supporting the semiconductor element, a first reverse surface facing a second side in the thickness direction, a first side surface facing a first side in a first direction perpendicular to the thickness direction, and a plurality of first recesses each recessed from both the first reverse surface and the first side surface. The first reverse surface is exposed from the sealing resin, and the first recesses are arranged at intervals in a second direction perpendicular to the thickness direction and the first direction.
SEMICONDUCTOR DEVICE
The semiconductor device includes a semiconductor element, a conductive support member and a sealing resin whose resin side surface faces one side of a first direction. The support member has an outer lead including a root portion extending from the resin side surface, a mount portion on one side of a thickness direction relative to the root portion, and an extended portion connected to the root portion via a bent portion and to the mount portion via another bent portion. The outer lead has a first division including the extended portion, a second division including the root portion and connected to the first division, and a third division including the mount portion and connected to the first division. The first division is greater in second-direction dimension than the second and third divisions. A division boundary between the first and the third divisions is at the extended portion.
ELECTRONIC DEVICE
The electronic device includes a first electronic component, a second electronic component, a sealing resin covering the first/second electronic components, first, second, third and fourth leads, a first die pad supporting the first electronic component, and a second die pad supporting the second electronic component. The sealing resin has resin side surfaces facing in orthogonal directions perpendicular to a thickness direction of the sealing resin. A first outer portion of the first lead, a second outer portion of the second lead and a third outer portion of the third lead are exposed from one or more resin side surfaces different from the resin side surface from which a fourth outer portion of the fourth lead is exposed.