Devices and methods that include for configuring a profile of a liner layer before filling an opening disposed over a semiconductor substrate. The liner layer has a first thickness at the bottom of the opening and a second thickness a top of the opening, the second thickness being smaller that the first thickness. In an embodiment, the filled opening provides a contact structure.

A microelectronic structure is disclosed. The microelectronic structure can include a bulk semiconductor portion that has a first surface and a second surface opposite the first surface. The microelectronic structure can include a via structure that extends at least partially through the bulk semiconductor portion along a direction non-parallel to the first surface. The microelectronic structure can include a first dielectric barrier layer that is disposed on the first surface of the bulk semiconductor portion and extends to the via structure. The microelectronic structure can include a second dielectric layer that is disposed on the first dielectric barrier layer and extends to the via structure.

A chip structure having an interconnect and a manufacturing method thereof include a buffer layer formed between an upper metal structure and a passivation layer under the upper metal structure so as to prevent fractures, such as cracks, from occurring in the passivation layer due to difference of stress between the upper metal structure and the passivation layer.

A semiconductor device includes a porous dielectric layer including a recessed portion, a conductive layer formed in the recessed portion, and a cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the cap layer.

Microelectronic deviceshaving at least one conductive contact structure adjacent a silicide regionare formed using methods that avoid unintentional contact expansion and contact reduction. A first metal nitride liner is formed in a contact opening, and an exposed surface of a polysilicon structure is thereafter treated (e.g., cleaned and dried) in preparation for formation of a silicide region. During the pretreatments (e.g., cleaning and drying), neighboring dielectric material is protected by the presence of the metal nitride liner, inhibiting expansion of the contact opening. After forming the silicide region, a second metal nitride liner is formed on the silicide region before a conductive material is formed to fill the contact opening and form a conductive contact structure (e.g., a memory cell contact structure, a peripheral contact structure).

A method for forming a semiconductor device structure is provided. The method includes forming a first conductive structure surrounded by a first dielectric layer and forming a second dielectric layer over the first conductive structure and the first dielectric layer. The method also includes forming a via hole in the second dielectric layer, and the via hole exposes the first conductive structure. The method further includes partially removing the first conductive structure through the via hole to form a recess in the first conductive structure. In addition, the method includes forming a second conductive structure filling the recess and the via hole.

A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the fin structure adjacent to the S/D region. The gate structure includes a gate stack disposed on the fin structure and a gate capping structure disposed on the gate stack. The gate capping structure includes a conductive gate cap disposed on the gate stack and an insulating gate cap disposed on the conductive gate cap. The semiconductor device further includes a first contact structure disposed over the gate stack. A portion of the first contact structure is disposed within the gate capping structure and is separated from the gate stack by a portion of the conductive gate cap.

Increasing in a contact-resistance between a trench gate lead-out electrode and a gate lead-out contact member is suppressed. It is assumed that a natural oxidation film is formed in the polysilicon film when the trench gate lead-out electrode is formed. In case of the natural oxidation film is formed, a desired etching process is performed so that the natural oxidation film does not protrude beyond the upper surface of the trench gate lead-out electrode.

A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

Embodiments described herein may be related to apparatuses, processes, and techniques related to patterning and metallization to produce metal features on a substrate that have pitches less than 26 nm. Other embodiments may be described and/or claimed.