Disclosed is a semiconductor doping method, and the semiconductor doping method includes: forming a molybdenum disulfide (MoS.sub.2) layer on a substrate; sputtering and depositing an aluminum nitride (AlOxNy) thin film on a surface of the molybdenum disulfide (MoS.sub.2) layer; and injecting electrons into the molybdenum disulfide (MoS.sub.2) through the deposition of the aluminum nitride (AlOxNy) thin film.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2Se.sub.(3-x)S.sub.x, MOS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.

An integrated circuit device includes a transistor, a conductive contact plug, a first interconnect structure, and a conductive structure. The transistor includes a gate structure and source/drain regions at opposite sides of the gate structure. The conductive contact plug is electrically coupled to one of the gate structure and the source/drain regions. The first interconnect structure is disposed over the conductive contact plug. The conductive structure is disposed electrically coupled to the conductive contact plug by the first interconnect structure. The conductive structure includes a fill metal and a transition metal dichalcogenide liner cupping an underside of the fill metal. A bottommost position of the transition metal dichalcogenide liner is lower than a bottommost position of the fill metal.