A control device configured to control a supply condition of a gas which is supplied between two substrates that are to be bonded to each other by a substrate bonding device, is configured to control the supply condition based on a measurement result obtained by a measurement in relation to at least one of the substrate, another substrate bonded before the substrate is bonded, or the substrate bonding device, and the two substrates are bonded to each other by a contact region expanding after the contact region is formed in a center.

A method for obtaining misalignment data of an exposure equipment, performed by a computing device comprising at least one processor, includes obtaining a first latent vector from alignment data of a plurality of shots within a wafer measured based on a plurality of light sources having different wavelengths, using a first graph neural network (GNN), obtaining a third latent vector by reflecting an importance of the plurality of light sources and the plurality of shots in the first latent vector, obtaining misalignment data for each of the plurality of shots from the third latent vector using a first multilayer perceptron (MLP) neural network, and adjusting an equipment control value of the exposure equipment based on the misalignment data for each of the plurality of shots in the wafer.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

During polishing of a backside conductive layer, a sensor of an in-situ eddy current monitoring system is repeatedly swept across the substrate so that each respective sweep of the sensor generates a respective signal trace that includes a sequence of signal values. For each respective signal trace, the sequence of signal values is converted to a corresponding thickness trace that includes sequence of thickness values for different locations on the substrate, thus generating a sequence of thickness traces. For each respective thickness trace in the sequence of thickness traces, a plurality of minima in the respective thickness trace are identified. A sequence of layer thickness values over time is calculated based on the plurality of minima from the respective traces in the sequence of thickness traces. Conductive vias extend through the semiconductor wafer of the substrate to electrically connect the backside conductive layer to a front-side conductive layer.

An apparatus for manufacturing a semiconductor package is provided. The apparatus includes: a chuck configured to hold an object, wherein the object includes a wafer-to-wafer bonding structure, the wafer-to-wafer bonding structure includes an edge area, and a gap is defined in the edge area between wafers; and a supply structure configured to dispense a sealant toward the gap of the wafer-to-wafer bonding structure while held in a vertical orientation.

An electronic device manufacturing system including a substrate-holder configured to secure a substrate during processing and a controller, operatively coupled to the substrate-holder. The controller is configured to apply, to an electrode of the substrate-holder, a first voltage. The controller is further configured to determine a first impedance value between the substrate-holder and the substrate. The controller is further configured to determine a delta value between the first impedance value and a predetermined second impedance value, and determine whether the delta value satisfies a threshold criterion. Responsive to the delta value failing to satisfy the threshold criterion, the controller is further configured to apply a second voltage to the substrate, wherein the second voltage is greater than the first voltage.

A laser processing device for forming an opening in an insulating layer of a wiring substrate includes a light source that emits a laser beam, an objective lens that focuses the laser beam onto a surface of a wiring substrate, a control device including circuitry that control irradiation of the laser beam, and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate irradiated with the laser beam. The circuitry of the control device calculates an integrated value from start of processing at one processing position for the sensor output corresponding to each of irradiations of the laser beam at the one processing position on the wiring substrate and terminates formation of the opening at the one processing position when the integrated value satisfies a predetermined condition.

A laser processing device for forming an opening in an insulating layer of a wiring substrate includes a light source that emits a laser beam, an objective lens that focuses the laser beam onto a surface of a wiring substrate, a control device including circuitry that controls an irradiation condition of the laser beam, and a sensor that outputs to the control device a sensor output based on plasma light emitted from the wiring substrate due to irradiation of the laser beam. The circuitry of the control device recognizes a change in an irradiation site of the laser beam based on the sensor output, reduces processing capability of the laser beam and continues the irradiation upon.

Embodiments of the present disclosure relate to a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure relate to an in-situ defect data analyzer to identify CMP induced defects during polishing processing and cleaning processing performed in the CMP tool. In some embodiments, the CMP tool includes an AI (artificial intelligence)-assisted defect database. The defect database may be used to identify and classify CMP related defects, such as scratch, fall-on slurry residuals, during polishing or cleaning process. As a result, defect warning cycle time for a CMP process is improved significantly.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are parameteric resonance monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.