A target wafer repairing apparatus is provided. The target wafer repairing apparatus includes a chamber configured to load a target wafer, and a particle beam source configured to emit one or more beamlets to irradiate a repair region of the target wafer. The repairing apparatus further includes at least one gas inlet configured to inject a precursor gas to the repair region of the target wafer to repair defects in the repair region of the target wafer.

A system for monitoring a precursor tank during a deposition process includes a sensor and a signal processor. The sensor includes a sensor chamber connected in line with the precursor tank and a deposition chamber, a radiation emitter to emit a radiation passing through a precursor-containing gas in the sensor chamber, and a radiation receiver to receive the radiation passed through the precursor-containing gas. The signal processor obtains an absorption spectrum of the precursor-containing gas from the received radiation and determines a remaining precursor amount in the precursor tank based on the absorption spectrum. The system facilitates inline monitoring the remaining precursor amount in the precursor tank during a deposition operation, thereby advantageously reducing risks of undergoing a deposition operation while the remaining precursor amount is unacceptably low and avoiding replacing the precursor tank while the remaining precursor amount is acceptable.

In an embodiment, a polishing system may include a polishing platen. The polishing system may also include a polishing pad on the polishing platen, a polishing head configured to hold a wafer in contact with the polishing pad, a capacitive sensor configured to measure a capacitance of a dielectric film on the wafer during a polishing process, and a controller electrically connected to the capacitive sensor. The controller maybe be configured to adjust at least one polishing parameter based on the measured capacitance, and halt the polishing process when the measured capacitance is within a predetermined range corresponding to a target thickness of the dielectric film.

An apparatus, in accordance with one embodiment, includes a superjunction device having a voltage sustaining layer formed of a semiconductor material and a dopant in the voltage sustaining layer. The dopant is for distributing an electric field within the voltage sustaining layer. The dopant is more concentrated along a sidewall of the voltage sustaining layer than toward a center of the voltage sustaining layer, the sidewall extending at least a portion of the distance between a top surface and a bottom surface of a voltage sustaining layer. Methods of electric field-enhanced dopant diffusion to form a superjunction device are also presented.