A holding head structure and a manufacturing method using the same are disclosed. The holding head structure includes a body of a matrix material, a plurality of operating cores embedded in the matrix material of the body, and a plurality of isolators in the body and defining holding units. The holding units are electrically isolated from one another by the plurality of isolators. Each holding unit includes at least one operating core, and each holding unit is configured to be individually controlled and be electrically connected to a power source.

A thermal conduction sheet holder include, in the following order, an elongated carrier film, a plurality of thermal conduction sheets, and an elongated cover film covering the plurality of thermal conduction sheets, the shortest distance between adjacent thermal conduction sheets is 2 mm or more, the plurality of thermal conduction sheets are disposed at intervals in a longitudinal direction of the carrier film and the cover film, and the plurality of thermal conduction sheets are peelable from the cover film and the carrier film.

A substrate bonding device including: a bonding chamber including (i) a loading region in which a lower substrate is loaded, (ii) a bonding region in which an upper substrate is bonded to the lower substrate, and (iii) an unloading region spaced from the loading region and unloading the lower substrate to which the upper substrate is bonded in an internal space; a plurality lower chucks configured to support the lower substrate, each lower chuck moveable to be sequentially disposed in the loading region, the bonding region, and the unloading region; and an upper chuck configured to support the upper substrate to face the lower substrate in the bonding region.

A bonding apparatus and a bonding method are provided. The bonding apparatus includes: a machine base, including a movable pick-up platform; and a laser interferometer assembly. The laser interferometer assembly includes: a first laser interferometer unit, configured to determine displacement information of the movable pick-up platform along a first direction; and a second laser interferometer unit, configured to determine displacement information of the movable pick-up platform along a second direction. Based on the displacement information along the first direction and the displacement information along the second direction, the laser interferometer assembly is further configured to determine coordinate information of the movable pick-up platform.

Provided is a substrate bonding device in which a risk of substrate damage due to vibration is alleviated, the substrate bonding device including a first chuck configured to support a lower substrate, a second chuck configured to grip an upper substrate facing the lower substrate in a first direction perpendicular to an upper surface of the lower substrate, and a press disposed at a center of the second chuck and configured to push the upper substrate toward the lower substrate in the first direction, and the press includes a first pressurizing part and a second pressurizing part which are spaced apart from each other in the first direction.

A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.

A bonding apparatus includes a first holder, a second holder, a moving unit, a housing, an interferometer, a first gas supply and a second gas supply. The first holder is configured to attract and hold a first substrate. The second holder is configured to attract and hold a second substrate. The moving unit is configured to move a first one of the first holder and the second holder in a horizontal direction with respect to a second one thereof. The interferometer is configured to radiate light to the first one or an object moved along with the first one to measure a horizontal distance thereto. The first gas supply is configured to supply a clean first gas to an inside of the housing. The second gas supply is configured to supply a second gas to a space between the interferometer and the first one or the object.

A method of electroplating a metal into features, having substantially different depths, of a partially fabricated electronic device on a substrate is provided. The method includes adsorbing accelerator into the bottom of recessed features; partially filling the features by a bottom up fill mechanism in an electroplating solution; diffusing leveler into shallow features to decrease the plating rate in shallow features as compared to deep features; and electroplating more metal into the features such that the height of metal in deep features is similar to the height of metal in shallow features.

A mask-to-donor alignment method for laser-induced forward transfer includes (a) directing a laser beam onto a mask to produce a masked beam including one or more separate sub-beams, each sub-beam being transmitted by a respective aperture of the mask, (b) viewing each sub-beam, as transmitted by a donor substrate carrying one or more devices, to obtain imagery indicating in each sub-beam a shadow of a corresponding one of the one or more devices, and (c) based on the imagery, adjusting position of the masked beam and the donor substrate, relative to each other, so as to align each device with respect to the corresponding sub-beam. This in-situ observation of the relative alignment between the donor substrate and the masked beam produces an improved alignment accuracy, as compared to the indirect fiducial-based alignment method. Alignment accuracies better than 0.2 m, and associated sub-1 m LIFT positioning accuracies, have been demonstrated.

A bonding apparatus includes a chuck table, a gantry frame, a bond head and a gas supplying mechanism. The chuck table is configured to support a semiconductor wafer. The gantry frame is disposed over the chuck table. The bond head is movably installed on the gantry frame, wherein the bond head is configured to pick up a semiconductor chip from a support structure, and for moving the semiconductor chip towards the chuck table for bonding to the semiconductor wafer. The gas supplying mechanism is configured to supply a bonding gas to the semiconductor wafer during the bonding of the semiconductor chip.