According to some aspects of the present disclosure, a slurry composition for chemical mechanical polishing may include polishing particles including a piezoelectric material, and an oxidizing agent, wherein the piezoelectric material may include a first piezoelectric material and a second piezoelectric material bonded to the first piezoelectric material, and the first piezoelectric material and the second piezoelectric material may have different bandgaps from each other.

A manufacture includes a polysilicon structure over a portion of a substrate. The manufacture further includes a spacer on a sidewall of the polysilicon structure, wherein the spacer has a concave corner region between an upper portion and a lower portion, the spacer has an outer sidewall and an inner sidewall, and the inner sidewall is between the outer sidewall and the polysilicon structure. The manufacture further includes a protective layer exposing a portion of the outer sidewall of the spacer above the concave corner region, wherein the protective layer covers an entirety of the lower portion of the spacer, and the protective layer directly contacts the substrate.

A technique includes: performing a film formation operation of forming a film containing a metal element on a first surface preferentially over a second surface of a substrate, the act of performing the film formation operation including: (a) forming metal-containing substance containing metal element on at least a portion of the substrate by performing: (a1) supplying a first gas containing the metal element to the substrate including the first surface as a surface of first substance and the second surface as a surface of second substance; and (a2) supplying a second gas containing the metal element to the substrate; and (b) supplying a reaction gas to the substrate, wherein (a) includes a period TC during which (a1) and (a2) are performed simultaneously, wherein the first gas etches the metal-containing substance at a first rate, and wherein the second gas etches the metal-containing substance at a second rate.

A wafer structure comprises a semiconductor wafer having a first side opposite a second side in a longitudinal direction. The wafer structure also comprises active circuitry formed on the first side of the semiconductor wafer. The active circuitry demarcates a voltage boundary between a first voltage zone and a second voltage zone in the semiconductor wafer. The wafer structure further includes an insulation layer including an insulation coating and an insulation barrier. The insulation coating is formed on the second side of the semiconductor wafer and extends to an insulation surface in the longitudinal direction. The insulation barrier extends from the insulation surface to the first side of the semiconductor wafer at the voltage boundary. The wafer structure yet further includes a conductive coating layer formed proximate to the insulation surface of a conductive coating material.

A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.