Various embodiments of the present technology may provide a method for fabricating a semiconductor structure. The method may include receiving a source substrate having a dielectric layer and a conductive feature, selectively depositing a barrier layer only on a top surface of the conductive feature, modifying a top surface of the dielectric layer, and removing the barrier layer after modifying the dielectric layer. The method may also include cleaning a top layer of the dielectric and conductive feature prior to depositing the barrier layer.

The present disclosure relates to an electronic device comprising a wafer comprising a first upper surface having at least one first contact arranged thereon; and at least one die comprising a second upper surface having at least one second contact arranged thereon, and at least one first lateral surface orthogonal to the second upper surface, said first contact being coupled to said second contact by a connector comprising one first conductive pillar formed on said first contact of said wafer; one second conductive pillar formed on said second contact of said die; and at least one conductive ball positioned in contact with at least a first upper portion of said first pillar(s) and in contact with at least one second upper portion of said second pillar(s).

What is disclosed is structures and methods of integrating micro devices into system substrate. Further, the disclosure, also relates to methods and structures for enhancing the bonding process of micro-devices into a substrate. More specifically, it relates to expanding the micro device area or bonding area of micro devices.

A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.

A light emitting display apparatus includes a first substrate including pixels and signal lines arranged in a first direction and a second substrate disposed on a rear surface of the first substrate, wherein a routing portion including routing lines is provided in a first lateral surface of the first substrate and a second lateral surface of the second substrate. In the first substrate, a first pad portion adjacent to the first lateral surface includes first pads connected to the signal lines and the routing lines, a first secondary pad provided between the first pads, and a first connection line provided to overlap the first pads and the first secondary pad. In the second substrate, a second pad portion adjacent to the second lateral surface includes second pads connected to the routing lines, a second secondary pad provided between the second pads, and a second connection line provided to overlap the second pads and the second secondary pad. The routing portion includes a secondary routing line connecting the first secondary pad to the second secondary pad.

A semiconductor device includes a first semiconductor chip having a first surface and a second surface that is opposite to the first surface, a second semiconductor chip having a third surface facing the first surface and a fourth surface that is opposite to the third surface, a first dielectric layer on the first surface of the first semiconductor chip, a second dielectric layer on the third surface of the second semiconductor chip, a connection pad including a first conductive pad penetrating the first dielectric layer and a second conductive pad penetrating the second dielectric layer, and an adhesive layer between the first dielectric layer and the second dielectric layer, where the adhesive layer includes an organic dielectric material, the first conductive pad and the second conductive pad extend into the adhesive layer, and the first conductive pad directly contacts the second conductive pad.

Microelectronic assemblies with a die stack positioned such that a face of each die in the stack is orthogonal to a face of a base are disclosed. Each die has a first face and a second face opposite the first face. The die stack includes multiple dies, with the faces of each die parallel to the faces of the other dies in the die stack. The die stack is positioned on the base such that the faces of each die are substantially orthogonal to the face of the base. Each die in the die stack can have a corresponding conductive contact, and the conductive contact on each die in the die stack can be coupled to a conductive contact on the base via an interconnect. The interconnect can be a solder joint, such as a solder bump or solder ball.

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

An element, a bonded structure including the element, and a method of forming the same are disclosed. The bonded structure can include a first element having a first nonconductive field region and a first conductive feature at least partially defining a bonding surface of the first element. The first conductive feature includes a first portion and a second portion over the first portion with a continuous sidewall. The second portion includes different metal composition from the first portion or comprising fluorine at the surface of the first conductive feature. A second element has a second nonconductive field region and a second conductive feature which are directly bonded to the first nonconductive field region and a first conductive feature, respectively.

A light-emitting diode (LED) module includes: a glass substrate; a signal wiring layer provided on the glass substrate and including a plurality of electrodes connected by a passive matrix circuit; and a plurality of LEDs connected to the plurality of electrodes and configured to emit light toward the glass substrate, wherein the signal wiring layer further includes a boundary region that divides the LED module into a plurality of unit regions.