The present disclosure relates to a method for manufacturing electronic chips comprising, in order:

a. forming metal contacts on the side of a first face of a semiconductor substrate, in and on which a plurality of integrated circuits have been previously formed;

b. depositing a first protective resin on the metal contacts and the first face of the semiconductor substrate;

c. forming first trenches of a first width on the side of a second face of the semiconductor substrate;

d. depositing a second protective resin in the first trenches and on the second face of the semiconductor substrate;

e. forming second trenches of a second width, less than the first width, opposite the first trenches up to the metal contacts; and

f. forming third trenches opposite the second trenches, the third trenches extending through the metal contacts.

A semiconductor package including: a semiconductor package comprising a first semiconductor chip which includes a first face and a second face opposite to each other in a first direction, a first insulating layer which is disposed on the first face, and includes vias connected to each connecting pad of the first semiconductor chip, redistribution patterns which are disposed on the first insulating layer, under bump metal layers (UBM) which are respectively disposed on the redistribution patterns, a second insulating layer which covers a part of each of the redistribution patterns, and solder bumps which are respectively disposed on the UBMs, wherein the first insulating layer includes a third face and a fourth face opposite to the third face in the first direction, wherein the third face is adjacent to the first face, and a part of the fourth face does not overlap the second insulating layer in the first direction.

Various aspects of the present disclosure generally relate to a bonding pad configuration. A device includes a die including multiple bonding pads, pad configuration circuitry, and control circuitry. The pad configuration circuitry is configured to, based on a routing configuration, selectively connect multiple nodes of first circuitry to a first set of bonding pads of the multiple bonding pads. The control circuitry is connected to the pad configuration circuitry and configured to obtain the routing configuration.

A die package comprises a substrate comprising a solder pad element, a semiconductor die coupled to the substrate, a solder layer comprising a first solder material deposited on the solder pad element, the first solder material having a first melting temperature, and an interconnect ball comprising a second solder material deposited on the solder layer, the second solder material having a second melting temperature that is less than the first melting temperature.

A manufacturing method of a package is provided. The method includes the following steps. A wafer substrate having first bonding pads is provided. A die is placed on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads. The die is encapsulated by an etch stop layer and a first encapsulant. A redistribution structure is disposed over the die, the etch stop layer and the first encapsulant. A portion of the redistribution structure is removed to expose the first encapsulant. The first encapsulant is removed to expose the etch stop layer. A dielectric structure is disposed over the exposed etch stop layer and laterally encapsulates the die and the redistribution structure.

Embodiments provide a fabricating method, a semiconductor structure, and a semiconductor device. The method includes: providing a plurality of chips, each of the chips includes an element region and a scribe line region arranged in a first direction; stacking the chips to form a chip module, where a stacking direction of the chips is a second direction perpendicular to the first direction, the element regions of the chips are overlapped with each other, and the scribe line regions of the chips are overlapped with each other; planarizing a side surface of each of the scribe line regions distant from the element region after the chip module is formed, to remove at least part of the scribe line regions and expose the power supply wiring layer; and forming a pad on the side surface planarized, where the pad is connected to the power supply wiring layer.

Three-dimensional (3D) NAND memory devices and methods are provided. In one aspect, a fabrication method includes forming a conductor/insulator stack over a substrate, configuring memory cells through the conductor/insulator stack, forming a conductive layer, removing a portion of the conductive layer to form an opening in the conductive layer, depositing a dielectric material in a space of the opening, and forming an airgap in the space.

A semiconductor package device includes a first semiconductor structure, a second semiconductor structure, and a non-metal dopant. The first semiconductor structure includes a first dielectric bonding layer and a first conductive bonding feature disposed in the first dielectric bonding layer. The second semiconductor structure includes a second dielectric bonding layer bonded to the first dielectric bonding layer and a second conductive bonding feature disposed in the second dielectric bonding layer. The first conductive bonding feature is bonded to the second conductive bonding feature to form an interface therebetween. The non-metal dopant is disposed in at least one of the first conductive bonding feature and the second conductive bonding feature.

A photonic assembly includes: an electronic integrated circuits (EIC) die including a semiconductor substrate, semiconductor devices located on a horizontal surface of the semiconductor substrate, first dielectric material layers embedding first metal interconnect structures, a dielectric pillar structure vertically extending through each layer selected from the first dielectric material layers, a first bonding-level dielectric layer embedding first metal bonding pads, wherein a first subset of the first metal bonding pads has an areal overlap with the dielectric pillar structure in a plan view; and a photonic integrated circuits (PIC) die including waveguides, photonic devices, second dielectric material layers embedding second metal interconnect structures, a second bonding-level dielectric layer embedding second metal bonding pads, wherein the second metal bonding pads are bonded to the first metal bonding pads.

A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.