A semiconductor device is provided. A semiconductor device includes a first semiconductive region, a second semiconductive region, an isolation structure and at least one inner via. The isolation structure is formed between the first semiconductive region and the second semiconductive region and includes an isolation bottom formed beneath the second semiconductive region; and an isolation ring having a lower portion connecting the isolation bottom and an upper portion surrounding the second semiconductive region. The at least one inner via is formed in the second semiconductive region, on the isolation bottom and surrounded by the isolation structure. The isolation structure and the least one inner via have insulating materials.

A semiconductor structure includes a substrate, an interconnect structure, a first via structure and a second via structure is provided. The substrate includes a first surface and a second surface opposite to the first surface, wherein the substrate includes a first semiconductor portion and a second semiconductor portion different from the first semiconductor portion. The interconnect structure is over the first surface of the substrate. The first via structure penetrates the substrate from the first surface to the second surface, and is coupled to the interconnect structure. The second via structure penetrates the substrate from the first surface to the second surface, and is separated from the interconnect structure and the first via structure.

A system and method for stealth dicing a semiconductor wafer. The method may include implanting dopant ions to a first depth in the semiconductor wafer through a back side of the semiconductor wafer. The method may further include focusing a laser beam at an inside portion of the wafer through the back surface of the wafer to form a modified layer in material of the semiconductor wafer proximate the first depth. The method may also include fracturing the semiconductor wafer along boundaries defined by the modified layer.

A transistor includes: a substrate; a constant current formation layer provided on the substrate; a pair of source/drain patterns provided on the constant current formation layer; a gate electrode provided between the pair of source/drain patterns; a channel pattern extending in a direction between the pair of source/drain patterns; and a gate insulating layer surrounding the channel pattern, wherein the channel pattern penetrates the gate insulating layer and the gate electrode and is electrically connected to the source pattern and the drain pattern, the gate insulating layer separates the channel pattern and the gate electrode from each other, the constant current formation layer generates a constant current between the drain pattern and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

A semiconductor structure includes a substrate, at least one first fin protruded from the substrate, and a 3D capacitor disposed over the substrate. The 3D capacitor includes a doped electrode conformally disposed in the first fin, a metal electrode disposed over the doped electrode, and a dielectric layer disposed between the doped electrode and the metal electrode.

A bipolar transistor includes a sub-collector doped with a first dopant type and situated in a semiconductor substrate, a device layer doped with the first dopant type situated over the sub-collector, and a shallow trench isolation (STI) situated in the device layer and bordering a collector of the bipolar transistor. The bipolar transistor further includes a Reduced Surface Layer (RESURF) region doped with a second dopant type opposite the first dopant type situated between the collector and the STI, wherein the RESURF region protects against breakdown of the bipolar transistor.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift region; a second conductivity type first breakdown voltage holding region; a source trench passing through the first conductivity type source region and the second conductivity type body region from the front surface and reaching a drain region; and a second conductivity type second breakdown voltage region selectively formed on an edge portion of the source trench where the sidewall and the bottom wall thereof intersect with each other in a parallel region of the source trench.

The present disclosure describes a system and a method for an ion implantation (IMP) process. The system includes an ion implanter configured to scan an ion beam over a target for a range of angles, a tilting mechanism configured to support and tilt the target, an ion-collecting device configured to collect a distribution and a number of ejected ions from the ion beam scan over the target, and a control unit configured to adjust a tilt angle based on a correction angle determined based on the distribution and number of ejected ions.