H10W40/10

PACKAGE COMPRISING INTEGRATED DEVICE AND A METALLIZATION PORTION
20260011674 · 2026-01-08 ·

A package comprising a metallization portion; an integrated device comprising a plurality of pillar interconnects, wherein the integrated device is coupled to the metallization portion through the plurality of pillar interconnects; and an encapsulation layer at least partially encapsulating the integrated device, wherein the encapsulation layer is coupled to the metallization portion.

INTEGRATED HEATER AND COLD PLATE FOR TEST APPLICATIONS
20260009842 · 2026-01-08 ·

A thermal control system comprising an integrated heater and cold plate is disclosed. The integrated heater and cold plate comprises a heat transfer geometry for transferring heat from the heater to the cold plate. The heat transfer geometry may comprise a plurality of fins configurable for changing the heat transfer rate between the heater and the cold plate. For example, the number of fins, spacing between fins, size of the base of the cold plate, fluid flow through the fins, etc. may be configured to increase or decrease the heat transfer rate. In some examples, the heat transfer geometry may be deposited directly on or permanently attached to the base of the cold plate or heater. In some examples, the heater may directly contact the heat transfer geometry. The thermal control system may not include air or a thermal interface material (TIM) between the heater and the heat transfer geometry.

Heatsinks For In-Line Memory Modules

A system for cooling a plurality of in-line memory modules includes sliding thermal interface material (TIM) pads and a heatsink thermally coupled to the in-line memory modules through the sliding TIM pads. The heatsink further includes a base, a plurality of thermally conductive fins, and a plurality of pedestals. The base extends in a plane. The plurality of thermally conductive fins extend in a first direction away from the base. The plurality of pedestals extend in a second direction away from the base and opposite the first direction. The sliding TIM pads are positioned between each of the plurality of pedestals and an adjacent in-line memory module. The plurality of pedestals further include a first leg and a second leg. The first and second legs are configured to move between a first position and a second position,

ELECTRICAL INTERCONNECTS FOR PACKAGES CONTAINING PHOTONIC INTEGRATED CIRCUITS

A semiconductor chip includes: a photonic integrated circuit (PIC) comprising an active component electrically connected to a first landing pad at a surface of the PIC, wherein the first landing pad is configured to receive a copper pillar, which, when installed, provides at least a portion of a first electrical interconnect between the active photonic component and a second integrated circuit to be stacked on the surface of the PIC, and wherein, when viewed from above the PIC towards the PIC, a center of the active photonic component on the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m.

Electronic package of two vertically stacked chips with chip-to-chip bump connections and manufacturing method thereof

An electronic package is provided, where a laterally diffused metal oxide semiconductor (LDMOS) type electronic structure is mounted onto a complementary metal oxide semiconductor (CMOS) type electronic element to be integrated into a chip module, thereby shortening electrical transmission path between the electronic structure and the electronic element so as to reduce the communication time between the electronic structure and the electronic element.

Integrated circuit device

An integrated circuit device includes a heating element, and a control circuit configured to control flow of a current through the heating element. An outer shape of the integrated circuit device has a first side and a second side intersecting the first side. An outer shape of the heating element has a short side and a long side. A distance between the long side of the heating element and the first side of the integrated circuit device is larger than a distance between the short side of the heating element and the second side of the integrated circuit device.

Switching device, semiconductor device, and switching device manufacturing method

A switching device includes: a switching element; a die pad; a gate terminal; a first power terminal integral with the die pad; and a second power terminal, the gate terminal, the first power terminal, and the second power terminal are located on a side of a first direction of the die pad, the gate terminal, the first power terminal, and the second power terminal are arranged in a second direction orthogonal to the first direction in the following order: the gate terminal, the first power terminal, and the second power terminal or the second power terminal, the first power terminal, and the gate terminal, the switching element includes a first and a second gate pad, the first gate pad is closer to the gate terminal than the second gate pad is, the second gate pad is closer to the second power terminal than the first gate pad is.

ELECTRICAL INTERCONNECTS FOR PACKAGES CONTAINING PHOTONIC INTEGRATED CIRCUITS

A method includes: providing an active photonic component of a photonic integrated circuit (PIC); attaching two electrodes to the active photonic component of the PIC; providing a first landing pad on a front surface of the PIC, wherein, when viewed from a direction perpendicular to the front surface of the PIC, a center of the active photonic component of the PIC is offset from a nearest edge of the first landing pad by about a distance less than 10 m; and electrically connecting the first landing pad to one of the two electrodes.

SUBSTRATE PACKAGE AND METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE

Provided is a semiconductor package including a substrate including a body having a first surface and a second surface, the first surface and the second surface opposite to each other, a plurality of interconnection patterns arranged in a vertical direction within the body, the plurality of interconnection patterns including upper terminals on the first surface and lower terminals on the second surface, and an induction heating structure within the body, and the induction heating structure spaced apart from the plurality of interconnection patterns, an upper protective layer on the first surface of the substrate and the upper protective layer including first openings respectively exposing the upper terminals, a semiconductor chip on the upper protective layer, and the semiconductor chip including connection pads.

SUBSTRATE PACKAGE WITH EFFICIENT SUPPORT FOR SIGNAL ROUTING FOR HIGH DATA RATE APPLICATIONS
20260025910 · 2026-01-22 ·

A device includes a substrate having a first side and a second side, wherein the first side faces opposite the second side. The device also includes a die positioned on the second side of the substrate and electrically coupled to the substrate. The device includes a signal routing component positioned on the first side of the substrate. The signal routing component is configured to route signals between the die and an external component to the device through the substrate. The device includes an electrical board positioned on the second side of the substrate. The electrical board is electrically coupled to the substrate.