An upper semiconductor build has an upper build dielectric; at least two upper build electrical signal contact bonding pads; at least one upper build dummy contact bonding pad; an upper build ground network electrically coupled to the at least two upper build electrical signal contact bonding pads; and an upper build anti-fuse dielectric between the upper build ground network and the upper build dummy contact bonding pad. A lower semiconductor build has a lower build dielectric; at least two lower build electrical signal contact bonding pads; at least one lower build dummy contact bonding pad; a lower build ground network; and a lower build anti-fuse dielectric between the lower build ground network and the lower build dummy contact bonding pad. The two builds are hybrid bonded to each other. When excess charge builds up, the anti-fuse dielectrics are blown and conduct the excess charge to ground.

A semiconductor storage device includes first and second chips. The second chip has a memory region and an edge seal region, and includes a plurality of edge seals, a first wiring layer at a first layer level on a first chip side of the edge seals, and a second wiring layer at a second layer level and contains tungsten. The first wiring layer includes first wirings at positions overlapping with inner edge seals, respectively, but not with an outermost edge seal and electrically connected to the inner edge seals, respectively. The second wiring layer includes second wirings that are provided at positions overlapping with the inner edge seals, respectively, but not with the outermost edge seal, and electrically connected to the inner edge seals, respectively, and a third wiring provided on an outer side of the second wirings, and electrically separated and spaced apart from the outermost edge seal.

A light emitting device including a substrate having a protruding pattern on an upper surface thereof, a first sub-unit disposed on the substrate, a second sub-unit disposed between the substrate and the first sub-unit, a third sub-unit disposed between the substrate and the second sub-unit, a first insulation layer at least partially in contact with side surfaces of the first, second, and third sub-units, and a second insulation layer at least partially overlapping with the first insulation layer, in which at least one of the first insulation layer and the second insulation layer includes a distributed Bragg reflector.

The present application provides a semiconductor structure having a dummy conductive member, and a manufacturing method of the semiconductor structure. The semiconductor structure includes a first wafer including a first substrate, a first dielectric layer over the first substrate, a first bonding layer over the first dielectric layer, a first via extending through the first bonding layer, and a first dummy conductive member disposed adjacent to the first via and extending partially through the first bonding layer; and a second wafer including a second bonding layer over the first bonding layer, a second via extending through the second bonding layer, a second dummy conductive member disposed adjacent to the second via and extending partially through the second bonding layer, a second dielectric layer over the second bonding layer, and a second substrate over the second dielectric layer.

An embodiment of the disclosure provides a semiconductor package, including a first semiconductor chip including a semiconductor substrate and a through via penetrating the semiconductor substrate, a chip structure on the first semiconductor chip and including at least one second semiconductor chip, a first shielding film covering a side surface of the chip structure, extending over the first semiconductor chip, and electrically connected to the through via, a molding material covering the first shielding film on the first semiconductor chip, and a second shielding film extending over the chip structure and the molding material and connected to the first shielding film.

A semiconductor package including a package substrate, a plurality of upper substrate pads, an image sensor chip on the package substrate, where the image sensor chip includes a sensing region and a pad region at least partially surrounding the sensing region, a plurality of chip pads and a plurality of dummy pads in the pad region, a plurality of bonding wires each electrically connecting respective ones of the plurality of upper substrate pads of the package substrate to respective ones of the plurality of chip pads, a reinforcement wire structure including a plurality of reinforcement wires each connecting at least two dummy pads of the plurality of dummy pads, a dam structure on the plurality of dummy pads and the reinforcement wire structure, a glass on the dam structure and the image sensor chip, and a molding member on the image sensor chip and the plurality of bonding wires.

Semiconductor devices including one or more interfacing segments patterned within an outer protective layer and associated systems and methods are disclosed herein. The one or more interfacing segments may provide attachment interfaces/surfaces for connection pads. The one or more interfacing segments or a portion thereof may remain uncovered or exposed and provide warpage control for the corresponding semiconductor device.

A method includes depositing a first dielectric layer on a first substrate of a first device die, etching the first dielectric layer to form a trench, depositing a metallic material in the trench and on a top surface of the first dielectric layer, and performing a chemical mechanical polish (CMP) process to remove a portion of the metallic material from the top surface of the first dielectric layer to form a first metal pad. After the performing of the CMP process, the method selectively etches the first metal pad to form recesses at an edge portion of the first metal pad, deposits a second dielectric layer on a second substrate of a second device die, forms a second metal pad in the second dielectric layer, and bonds the second device die to the first device die.

A semiconductor device may include a first substrate including device and edge regions, a first insulating structure on the first substrate, first metal pads and first dummy pads at the uppermost end of the first insulating structure, a second insulating structure on the first insulating structure, second metal pads and second dummy pads at the lowermost end of the second insulating structure, a first interconnection structure in the first insulating structure, electrically connected to the first metal pads and electrically isolated from the first dummy pads, and a second interconnection structure in the second insulating structure, electrically connected to the second metal pads, and electrically isolated from the second dummy pads. Ones of the first metal pads may be in contact with respective ones of the second metal pads on the device region, and ones of the first dummy pads may be in contact with respective ones of the second dummy pads on the edge region.

The semiconductor package includes a semiconductor chip; a first bonding layer including a first inner bonding layer and a first outer bonding layer sequentially stacked on the semiconductor chip along a vertical direction; first inner bonding pads accommodated in the first inner bonding layer on the bonding region of the substrate, and first inner align key patterns accommodated in the first inner bonding layer on the align key region of the substrate; first outer bonding pads accommodated in the first outer bonding layer on the bonding region of the substrate and first outer align key patterns accommodated in the first outer bonding layer on the bonding region of the substrate; a second bonding layer including a second outer bonding layer and a second inner bonding layer sequentially stacked on the first bonding layer along the vertical direction; and a second semiconductor chip disposed on the second bonding layer.