Methods of depositing silicon-containing films by plasma-enhanced vapor deposition, e.g., plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD), are disclosed. Exemplary methods include exposing a substrate in a processing system to a silicon-containing precursor; exposing the substrate to an oxygen-containing reagent; and exposing the substrate to a plasma of an inert gas.

Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

A method for processing a substrate is provided. The method includes disposing a substrate in a processing region of a process chamber and flowing a reaction gas into a remote plasma region of the process chamber, flowing a precursor gas into the processing region through the second plurality of channels in the showerhead, generating an inductively coupled plasma in the remote plasma region using the reaction gas to form plasma radicals, and exposing the precursor gas in the processing region to plasma radicals to form a dielectric film on the substrate with at least 95% step coverage.

The present disclosure generally provides methods. The methods include exposing a substrate in a processing chamber to a deposition precursor to form a first film. The first film having a first dielectric constant, a first leakage current, a first breakdown voltage, and a first hardness. The first film is exposed to a reactive precursor to form a second film. The second film having a second dielectric constant, a second leakage current, a second breakdown voltage, and a second hardness, wherein the reactive precursor comprises an oxygenated precursor. The second film is exposed to a UV light source to form a third film. The third film having a third dielectric constant, a third leakage current, a third breakdown voltage, and a third hardness.

A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

A method for improving the elastic modulus of dense organosilica dielectric films (k2.7) without negatively impacting the film's electrical properties and with minimal to no reduction in the carbon content of the film. The method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a mixture of an alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes; and applying energy to the gaseous composition comprising the mixture of the alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from 2.70 to 3.30, an elastic modulus of from 6 to 30 GPa, and an at. % carbon from 10 to 45 as measured by XPS.

A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H.sub.2 gas under Si-excess atmosphere within a temperature range of 1000 C. to 1350 C., a step of depositing, by a CVD method, a SiO.sub.2 film 2 on the SiC substrate 1 at such a temperature that the SiC substrate 1 is not oxidized, and a step of thermally treating the SiC substrate 1, on which the SiO.sub.2 film 2 is deposited, in NO gas atmosphere within a temperature range of 1150 C. to 1350 C.

A method for selectively etching silicon germanium with respect to silicon in a stack on a chuck in an etch chamber is provided. The chuck is maintained at a temperature below 15 C. The stack is exposed to an etch gas comprising a fluorine containing gas to selectively etch silicon germanium with respect to silicon.

Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate including a plurality of layers of a silicon-containing material may be housed within the processing region. Adjacent layers of the silicon-containing material may be vertically spaced apart to define a plurality of lateral gaps. One or more features may extend through the plurality of layers of the silicon-containing material and into the substrate. The methods may include depositing a flowable oxygen-containing material on the substrate in the plurality of lateral gaps and in the one or more features extending into the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the hydrogen-containing precursor while applying a bias power. The contacting may reduce a thickness of the flowable oxygen-containing material.

Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1. ##STR00001## In Formula 1, A.sup.1 is a heterocyclic group including one or more nitrogen, and R.sup.1 is hydrogen or an alkyl group of 16 carbon atoms. R.sup.2 and R.sup.3 may be each independently an alkyl group of 16 carbon atoms.