Exemplary processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. A layer of a first silicon-containing material defining one or more features may be disposed on the substrate. The methods may include contacting the substrate with the one or more deposition precursors. The contacting may deposit a liner material on the first silicon-containing material. The methods may include performing an atomic layer deposition (ALD) process. The ALD process may deposit a silicon-and-oxygen-containing material in the one or more features.

A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.

The invention provides a semiconductor structure, the semiconductor structure includes a substrate, two shallow trench isolation structures are located in the substrate, a first region, a second region and a third region are defined between the two shallow trench isolation structures, the second region is located between the first region and the third region. Two thick oxide layers are respectively located in the first region and the third region and directly contact the two shallow trench isolation structures respectively, and a thin oxide layer is located in the second region, the thickness of the thick oxide layer in the first region is greater than that of the thin oxide layer in the second region.

Embodiments of the disclosure include a method of forming contact structure on a semiconductor substrate. The method includes treating a native oxide layer formed on a contact junction, wherein treating the native oxide layer forms a silica salt layer on the contact junction disposed within a contact feature that includes one or more surfaces that comprise silicon nitride. Then exposing the silica salt layer and the one or more surfaces to a plasma comprising oxygen, wherein the plasma forms a silicon oxynitride material on the one or more surfaces. Then removing the second silica salt layer, selectively forming a metal silicide layer on the contact junction, and then filling the contact feature with a metal, wherein filling the feature comprises selectively depositing a metal layer over the selectively formed metal silicide layer.

The present disclosure generally relates to semiconductor processing for forming a semiconductor device. In an example, semiconductor device includes a semiconductor substrate, a nitride structure, and an oxide layer. The nitride structure is over the semiconductor substrate. The oxide layer is on the nitride structure. The semiconductor substrate includes an implanted doped region laterally proximate the nitride structure and the oxide layer. In another example, a nitride structure is formed over a semiconductor substrate. An oxide layer is formed on the nitride structure. A photoresist is formed over the semiconductor substrate. The photoresist has an opening exposing at least a portion of the oxide layer on the nitride structure. An implantation is performed using the photoresist to form an implanted doped region in the semiconductor substrate.

The present disclosure provides a method of manufacturing a semiconductor device. The method includes: forming a transistor region in a substrate; forming a gate dielectric layer over the transistor region; forming a diffusion-blocking layer over the gate dielectric layer; forming a first portion of a work function layer over the diffusion-blocking layer; forming a second portion of the work function layer over the first portion of the work function layer; forming a plurality of barrier elements on or under a top surface of the second portion of the work function layer; and forming a gate electrode over the work function layer, wherein the plurality of barrier elements block oxygen from diffusing into the work function layer during the formation of the gate electrode.

Examples are disclosed that relate to layered metal oxide films. One example provides a method of forming a patterning structure. The method comprises performing one or more layered film deposition cycles to form a layered film comprising a metal oxide. A layered film deposition cycle of the one or more layered deposition cycles comprises a metal oxide deposition subcycle and a silicon oxide deposition cycle. The metal oxide deposition subcycle comprises exposing the substrate to a metal-containing precursor and oxidizing metal-containing precursor adsorbed to the substrate. The silicon oxide deposition subcycle comprising exposing a substrate to a silicon-containing precursor and oxidizing silicon-containing precursor adsorbed to the substrate. The method further comprises etching one or more regions of the layered film to form the patterning structure.

A method of forming a surface treatment film on a substrate having, on a surface thereof, a first region where an insulator is exposed and a second region where at least one metallic matter is exposed, in which the surface treatment film is formed on the second region and is capable of suppressing intrusion of the surface treatment film onto the first region. A method of forming a surface treatment film, including preparing the substrate, oxidizing a surface of the second region, and forming a surface treatment film on the second region by exposing a surface of the substrate after the oxidation to a surface-treatment agent including a thiol having 8 or less carbon atoms.