An electronic package and a manufacturing method thereof are provided. The electronic package includes an electronic component and a shielding layer. The electronic component has an active surface, an inactive surface opposite to the active surface, and a side surface connecting the active surface and the active surface. The shielding layer is disposed on the electronic component and directly contacts and completely covers the inactive surface and the side surface. The shielding layer is formed directly on the surface of the electronic component, thereby shielding electromagnetic interference, reducing the size of the electronic package, and lowering production costs.

In one example, an optoelectronic module may include a stack assembly including an electrical integrated circuit and an optical integrated circuit electrically and mechanically coupled to one another, an interposer electrically and mechanically coupled to the stack assembly, and an optical connector to optically couple the optical integrated circuit with an array of optical fibers.

An electronic device and a method of manufacturing an electronic device are provided. The electronic device includes a first conductive layer and a first power die. The first conductive layer including a first part and a second part separated from the first part. The first power die is disposed above the first conductive layer and has a first surface. The first power die includes a first terminal exposed from the first surface and a second terminal exposed from the first surface. The first part is electrically connected to the first terminal and the second part is electrically connected to the second terminal.

A semiconductor device includes: a first terminal and a second terminal; a first conductive member that is electrically connected to the first terminal; a semiconductor chip that is provided on the first conductive member; a second conductive member that is provided on the semiconductor chip and electrically connected to the second terminal; a first insulator that is provided on the second conductive member and covers the semiconductor chip; a conductive plate that is provided on at least a part of the first insulator; and a post that is electrically connected to the conductive plate and extends along a side surface of the first insulator.

A semiconductor component has a circuit carrier with a first conductor layer, in which a first conductor path is formed. A first thyristor chip has, on its upper face, an anode contact and a gate contact and, on its lower face, a cathode contact placed for electrical connection on the first conductor path. A second thyristor chip has, on its upper face, a cathode contact and a gate contact and, on its lower face, an anode contact placed for electrical connection on the first conductor path. At least one electrically conductive connection element connects the anode contact of the first thyristor chip to the cathode contact of the second thyristor chip. The first conductor path thus establishes an electrical connection between the cathode contact of the first thyristor chip and the anode contact of the second thyristor chip.

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

Provided is a technique for enhancing the accuracy of deterioration diagnosis in a semiconductor device. The semiconductor device relating to the technique disclosed in the present specification is provided with a case, a semiconductor chip inside the case, a metal wire bonded to an upper surface of the semiconductor chip, at least one test piece inside the case, and a pair of terminals provided outside the case and connected to the test piece. The test piece is separated from the metal wire inside the case.

According to one embodiment, semiconductor device includes: a substrate; first to fourth conductive portions provided on the substrate; a first transistor having a drain and a source connected to the first and the second conductive portion, respectively; and second and third transistors each having a drain, a source, and a gate connected to the second, the third, and the fourth conductive portion, respectively; wherein the fourth conductive portion includes sixth and seventh portions to which each of the gate of the second and the third transistors is connected, respectively, and an eighth portion connecting the sixth portion and the seventh portion, and a shape of the eighth portion is different from a shape of the sixth and the seventh portions.

A semiconductor module includes a laminate substrate including an insulating plate and first and second circuit boards on an upper surface of the insulating plate, the first semiconductor device on an upper surface of the first circuit board, a first main terminal, and a first metal wiring board that electrically connects the first semiconductor device to the first main terminal. The first metal wiring board has a first bonding section bonded to an upper surface electrode of the first semiconductor device, a second bonding section bonded to an upper surface of the second circuit board, a first coupling section that couples the first bonding section to the second bonding section, a first raised section that rises upward from an end portion of the second bonding section. The first raised section has an upper end that is electrically connected to the first main terminal.

A packaged module includes an electrically conductive coil and a composite magnetic molding material covering the electrically conductive coil. The composite magnetic molding material includes a magnetic filler including coated magnetic particles (MB) dispersed in a composite non-magnetic material (MA). The composite magnetic molding material further includes a modulus reducing filler (MC) including modulus reducing particles or rubber particles or including functional groups having OH or COOH.