Some embodiments relate to an integrated device, including: a substrate comprising a top surface; a semiconductor device on the substrate; an interconnect structure overlying the substrate and coupled to the semiconductor device; a first conductive pad coupled to the interconnect structure, wherein the first conductive pad has a first upper surface at a first height above the top surface of the substrate, and a second upper surface a second height above the top surface of the substrate, wherein the first height is greater than the second height.

A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

In a general aspect, a semiconductor device assembly includes a conductive member, a conductive adhesive disposed on the conductive member, and a semiconductor die disposed on the conductive adhesive. The conductive adhesive couples the semiconductor die with the conductive member. The device assembly further includes a barrier included in the conductive member. The barrier is proximate to an edge of the semiconductor die and configured to inhibit outflow of the conductive adhesive.

A semiconductor device includes a substrate, a plurality of semiconductor elements, and a main terminal. Each of the plurality of semiconductor elements has a main electrode. The plurality of semiconductor elements are disposed on one surface of the substrate, and are connected in parallel to each other. The main terminal is a common connection target to which the plurality of semiconductor elements are electrically connected. A wiring resistance between the main terminal and the main electrode of a corresponding semiconductor element is different in accordance with a number of semiconductor elements disposed adjacent to the corresponding semiconductor element, and the wiring resistance increases as the number of the semiconductor elements disposed adjacent to the corresponding semiconductor element increases.

A semiconductor package is provided. The semiconductor package includes: a first semiconductor chip including a first bonding structure; a first front-end level layer including a first integrated circuit device; a first sub-back-end level layer including a plurality of first metal wire layers, an input and output device level layer including a two-dimensional input and output device, and a second sub-back-end level layer including a plurality of second metal wire layers electrically connected to the first integrated circuit device and the two-dimensional input and output device. The semiconductor package also includes a second semiconductor chip including a bonding structure that is bonded to the first bonding structure; a second front-end level layer including a second integrated circuit device, and a second back-end level layer including a plurality of third metal wire layers electrically connected to the second integrated circuit device.

Various embodiments of the disclosure relate to an integrated circuit package, an electronic device including same, and a manufacturing method therefor, the method comprising: attaching at least one first element to a first surface of a substrate; molding the first surface using a first mold; grinding the first mold; attaching at least one second element and at least one connection member comprising a conductive material to a second surface of the substrate; and attaching an interposer substrate including landing pads for an electrical connection with a printed circuit board included in an electronic device to the second surface of the substrate.

A semiconductor device comprises a first substrate and a semiconductor die mechanically coupled to the first substrate. The coefficient of linear thermal expansion (CTE) of the first substrate is similar to the CTE of the semiconductor die. The substrate may comprise single-crystal 4H silicon carbide. One or more insulating layers may be disposed over the first substrate. A second substrate may be disposed adjacent to a side of the semiconductor die opposite the side the first substrate is disposed adjacent to. One or more terminals may be disposed over a first surface of the first substrate, one or more backside terminals may be disposed over a second surface of the first substrate opposite the first surface, and the one or more terminals may be respectively electrically coupled to the one or more backside terminals through the first substrate.

The following is presented: A power semiconductor module with a substrate, having a substrate support, a plurality of conductor tracks arranged thereon and a power semiconductor component that is arranged on one of these conductor tracks and is connected internally in a circuit-compatible manner, with an electrically conductive flat intermediate element, the first surface of which, facing the substrate, is connected in an electrically conductive manner to a contact area of the substrate, with a contact element for the external connection of the substrate, wherein the contact element is arranged completely within the substrate and the first surface thereof, facing the substrate, is connected in an electrically conductive manner to the second surface of the intermediate element, which lies opposite the first, wherein the contact element overlaps the assigned intermediate element laterally on one side, with a casting compound that covers the substrate and leaves a portion of the second surface of the contact element, which lies opposite the first, free. An associated method for manufacturing this power semiconductor module is also presented.