A package structure and a formation method are provided. The method includes forming multiple patterned material elements over a carrier substrate, and the patterned material elements are more thermal conductive than copper. The method also includes forming a protective layer laterally surrounding each of the patterned material elements. The method further includes bonding a chip-containing structure to a first patterned material element of the patterned material elements through dielectric-to-dielectric bonding and metal-to-metal bonding.

The present technology relates to hybrid bonding of semiconductor memory wafer and semiconductor CMOS wafer using one or more debondable carriers. In one embodiment, a semiconductor device assembly is disclosed. The semiconductor device assembly includes a first semiconductor wafer having complementary metal-oxide-semiconductor (CMOS) transistor devices, the first semiconductor wafer having a first frontside surface and a first backside surface, and a second semiconductor wafer having one or more memory arrays, the second semiconductor wafer having a second frontside surface and a second backside surface, wherein a bonding interface is formed between the first backside surface of the first semiconductor wafer and the second frontside surface of the second semiconductor wafer, and wherein the first semiconductor wafer has a first dielectric layer disposed on its first frontside surface.

A method of processing a semiconductor element is disclosed. The method can include providing the semiconductor element that has a first nonconductive material. The first nonconductive material is disposed on a device portion of the semiconductor element. The method can include providing a transparent carrier. The method can include providing an intervening structure that has a second nonconductive material, a photolysis layer, and an opaque layer stacked together. The method can include forming a bonded structure such that the second nonconductive material is directly bonded to the first nonconductive material or to the transparent carrier. The intervening structure is disposed between the semiconductor element and the transparent carrier. The method can include decoupling the transparent carrier from the semiconductor element by exposing the photolysis layer to light through the transparent carrier such that the light decomposes the photolysis layer.

Provided are a semiconductor chip, a semiconductor package including the same, and a method for manufacturing the same. This semiconductor chip includes a first logic die, first memory dies arranged side by side in a first direction on the first logic die, and a first mold layer between the first memory dies. The first memory dies and the first mold layer are in contact with an upper surface of the first logic die, each of the first memory dies includes first memory bank regions arranged side by side in a second direction intersecting the first direction, and the first logic die includes first core regions overlapping the first memory bank regions, respectively, in a third direction that is perpendicular to the first and second directions.

A semiconductor structure includes an alternating stack of insulating layers and composite layers, each of the composite layers includes a plurality of electrically conductive word line strips and a plurality of dielectric isolation structures, and each of the insulating layers has an areal overlap with each electrically conductive word line strip and each dielectric isolation structure within the composite layers within a memory array region in a plan view along a vertical direction, rows of memory openings arranged along the first horizontal direction, where each row of memory openings of the rows of memory openings vertically extends through each insulating layer within the alternating stack and one electrically conductive strip for each of the composite layers, and rows of memory opening fill structures located within the rows of memory openings, where each of the memory opening fill structures includes a vertical stack of memory elements and a vertical semiconductor channel.

A semiconductor storage device of an embodiment includes a substrate, a plurality of first conductive layers, pillar, and a second conductive layer. The plurality of first conductive layers are provided above the substrate, and mutually separated in a first direction. The pillar is provided to penetrate the plurality of the first conductive layers, and includes a first semiconductor layer extending in the first direction. A part of the pillar that intersects with the first conductive layers are functioned as memory cells. The second conductive layer is provided above the plurality of first conductive layers and is in contact with the first semiconductor layer. The second conductive layer is made of a metal or a silicide.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a region of hydrophobic material electrically isolated from any circuitry of the first semiconductor device and configured to have a reduced bonding strength to a facing region relative to the dielectric-dielectric bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

A method and device for bonding chips onto a substrate or onto further chips. The chips are bonded onto the substrate or the further chips by means of a direct bond.

The present discloses includes a memory device including a first vertical plug and a second vertical plug that are arranged to be adjacent to each other, a first select line contacting the first vertical plug, a second select line over a same layer as the first select line and contacting the second vertical plug, and an isolation pattern overlapping with a portion of the first vertical plug and a portion of the second vertical plug and separating the first select line from the second select line.

A semiconductor device including high-integrated memory cells and a method for fabricating the semiconductor device is provided. The method may include forming a first bonding dielectric layer on a substrate, sequentially forming a mold stack, a blocking layer, and a second bonding dielectric layer on a sacrificial substrate to create a stack structure, flipping the stack structure including the sacrificial substrate, bonding the first bonding dielectric layer and the second bonding dielectric layer, removing the sacrificial substrate from the stack structure, and forming a plurality of memory cells vertically stacked in the mold stack of the stack structure, using the blocking layer as a barrier.