A semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes a first wafer structure and at least one die stack layer stacked on a second side of the first wafer structure. The die stack has first test pad and second test pad, which can be used to test and screen the die in the die stack and the die stack, contributing to increased yield of the semiconductor device. Additionally, metal pad may be formed on a first side of the first wafer structure before the die stack is stacked on the first wafer structure, avoiding warpage or other distortion possibly otherwise caused by high-temperature treatment if they are formed after the die stack is stacked. This facilitates stacking of more dies and/or wafers together. The semiconductor device is obtainable according to the method.

A 3D semiconductor device including: a first level including a first single crystal layer, a memory control circuit, the memory control circuit including first transistors, a first, second, and third metal layer, where connection of the first transistors includes any of the three metal layers; second transistors disposed atop the first level; third transistors are atop the second transistors; a fourth metal layer is atop the third transistors; a memory array including word-lines and memory cells, includes at least four memory mini arrays, where each of the memory cells includes at least one of the second transistors or the third transistors, a connection path from the fourth metal to the third metal which includes a via thru the memory array; and a semiconductor die atop and bonded to the first level which includes second transistors, at least one alignment mark positioned toward an edge of the die.

A method for manufacturing a semiconductor bonding structure is provided. The method includes forming a first semiconductor structure, forming a second semiconductor structure and hybrid bonding the first semiconductor structure and the second semiconductor structure. The step of forming the first semiconductor structure includes introducing boron into a first substrate to form an doped region in the first substrate, forming a first dielectric layer above the first substrate, and forming a first conductive pad in the first dielectric layer. The step of forming a second semiconductor structure includes forming a second dielectric layer above a second substrate, and forming a second conductive pad in the second dielectric layer. The first conductive pad is attached to the second conductive pad. The first dielectric layer is attached to the second dielectric layer.

A bonded structure can include a first reconstituted element comprising a first element and having a first side comprising a first bonding surface and a second side opposite the first side. The first reconstituted element can comprise a first protective material disposed about a first sidewall surface of the first element. The bonded structure can comprise a second reconstituted element comprising a second element and having a first side comprising a second bonding surface and a second side opposite the first side. The first reconstituted element can comprise a second protective material disposed about a second sidewall surface of the second element. The second bonding surface of the first side of the second reconstituted element can be directly bonded to the first bonding surface of the first side of the first reconstituted element without an intervening adhesive along a bonding interface.

A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.

A package structure includes a first dielectric layer disposed on a first patterned circuit layer, a first conductive via in the first dielectric layer and electrically connected to the first patterned circuit layer, a circuit layer on the first dielectric layer, a second dielectric layer on the first dielectric layer and covering the circuit layer, a second patterned circuit layer on the second dielectric layer and including conductive features, a chip on the conductive features, and a molding layer disposed on the second dielectric layer and encapsulating the chip. The circuit layer includes a plurality of portions separated from each other and including a first portion and a second portion. The number of pads corresponding to the first portion is different from that of pads corresponding to the second portion. An orthographic projection of each portion overlaps orthographic projections of at least two of the conductive features.

A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.

Embodiments of the present disclosure relate to methods for forming a package structure. The method includes depositing a first layer on a front side of a wafer and a second layer on a backside of the wafer, depositing a third layer on the first layer and a fourth layer on the second layer, depositing an etch stop layer on the third layer, depositing a fifth layer on the etch stop layer and a sixth layer on the fourth layer, removing the fifth layer by a first process, and removing the etch stop layer by a second process.

Bonded die structures and methods of fabricating bonded die structures including improved positioning of the dies used to form the structures. Improved positioning may be achieved by providing non-linear alignment features around the periphery of the dies that may facilitate accurate positioning of the dies with respect to one or more alignment marks on the target structures on which the dies are placed. The non-linear alignment features may include features formed in the peripheral edges of the dies, such as indent portions extending inwardly from the peripheral edges of the dies and/or outward bulge portions extending outwardly from the peripheral edges of the dies. Alternatively, or in addition, the non-linear alignment features may be features formed in a seal ring structure of the dies. The non-linear alignment features may improve the accuracy of the positioning of the dies relative to alignment mark(s) on the target structures using optical detection systems.

A semiconductor device manufacturing method includes forming a first film containing a first device on a first substrate, forming a second film containing a semiconductor layer on a second substrate, and changing the semiconductor layer into a porous layer. The method further includes forming a third film containing a second device on the second film, and bonding the first substrate and the second substrate to sandwich the first film, the third film, and the second film therebetween. The method further includes separating the first substrate and the second substrate from each other at a position of the second film.