The present invention provides a semiconductor device and a method of fabricating the device, in which in each adjacent pair of semiconductor substrates, a first semiconductor substrate is bonded to a backside of a second semiconductor substrate, and external connection terminals are adjacent, and electrically connected, to a second semiconductor substrate. In each adjacent pair of semiconductor substrates, there is a first dielectric layer containing plug structures, which electrically connect the semiconductor substrates to each other. With this arrangement, power from an external power source can be supplied to each semiconductor substrate through a power transmission path constructed of plug structures. At least some first dielectric layers each contain a DTC structure, which is electrically connected to second ends of the plug structures in specific first dielectric layer. During propagation of an electrical signal through the plug structures, it passes through the DTC structure before arriving at downstream semiconductor substrate.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

Disclosed herein are methods for direct bonding. In some embodiments, a direct bonding method comprises preparing a first bonding surface of a first element for direct bonding to a second bonding surface of a second element; and after the preparing, providing a protective layer over the prepared first bonding surface of the first element, the protective layer having a thickness less than 3 microns.

A memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers, a source layer overlying the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers overlying the source layer, a memory opening vertically extending through the first-tier alternating stack, the source layer, and the second-tier alternating stack, and a memory opening fill structure located in the memory opening. The memory opening fill structure includes a vertical semiconductor channel that extends through the first-tier alternating stack, the source layer, and the second-tier alternating stack. The vertical semiconductor channel has sidewall in contact with the source layer.

A semiconductor memory device includes a substrate, a plurality of first conductive layers arranged in a first direction intersecting with a surface of the substrate, a memory structure including a first semiconductor layer opposed to the first conductive layers, a first wiring, a second conductive layer, a first insulating layer separating the plurality of first conductive layers in a second direction, a second insulating layer separating one or a plurality of the first conductive layers disposed on a side closest to the substrate, and a third insulating layer separating one or a plurality of the first conductive layers disposed on a side farthest from the substrate. The memory structure has a tapered shape having a width in the second direction decreasing with increasing distance from the substrate, and the third insulating layer has a tapered shape having a width in the second direction decreasing with decreasing distance from the substrate.

Various embodiments of the present technology may provide a method for fabricating a semiconductor structure. The method may include receiving a source substrate having a dielectric layer and a conductive feature, selectively depositing a barrier layer only on a top surface of the conductive feature, modifying a top surface of the dielectric layer, and removing the barrier layer after modifying the dielectric layer. The method may also include cleaning a top layer of the dielectric and conductive feature prior to depositing the barrier layer.

A 3D device including: a first level including first transistors, a first interconnect; a second level including second transistors, the second level overlaying the first level and bonded to each other includes metal to metal bonding regions; at least four functional units each includes a first circuit which includes a portion of the first transistors; a redundancy circuit, where each of the at least four functional units includes a second circuit which includes a portion of the second transistors, and includes at least one memory control circuit and at least one memory array; where each of the at least four functional units includes a vertical connectivity structure which includes a plurality of pillars which provides electrical control connection between the first circuit and the second circuit; and a third transistor and a fourth transistor electrically connected to each other and are at least 100 mm apart.

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

An integrated circuit structure includes a donor carrier and a device carrier bonded to each other. The donor carrier includes a first bonding structure, a gate pattern disposed on the first bonding structure, a gate dielectric pattern disposed on the gate pattern, a silicon channel pattern disposed on the gate dielectric pattern, and at least one source contact and at least one drain contact disposed separately on the silicon channel pattern. The device carrier includes a device layer, an interconnect structure disposed on the device layer, and a second bonding structure disposed on the interconnect structure. The donor carrier is bonded to the device carrier through the first bonding structure and the second bonding structure.

A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.