A memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical stack of memory elements located at levels of the electrically conductive layers and a vertical semiconductor channel, a source layer contacting an outer sidewall of the vertical semiconductor channel, a backside gate electrode laterally surrounded by the vertical semiconductor channel and spaced from the vertical semiconductor channel by a backside gate dielectric layer, and a backside electrode contact layer in contact with the backside gate electrode and vertically spaced from the alternating stack by the source layer.

A stacked substrate according to an embodiment is a stacked substrate for separating using thermal expansion by laser light, and includes: a semiconductor substrate; a first insulating layer disposed above the semiconductor substrate; a first polysilicon layer that is disposed on the first insulating layer in contact with the first insulating layer, and doped with phosphorus; and a second polysilicon layer that extends in the first insulating layer, directly connects the first polysilicon layer and the semiconductor substrate, and is doped with phosphorus.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a cavity configured to entrap a gas during the formation of the bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

A bonded assembly of a first memory die and a second memory die is provided. The first memory die includes a first two-dimensional memory array of first MRAM cells, first access lines, second access lines, a first driver circuit configured to drive the first access lines, and a second driver circuit configured to drive the second access lines and third access lines. The second memory die includes a second two-dimensional memory array of second MRAM cells, the third access lines, and fourth access lines. Each of the third access lines is electrically connected to a respective one of the second access lines via first electrically conductive paths that extend through a horizontal interface between the first memory die and the second memory die.

A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure located in the memory opening. A Group IV-containing material portion is formed by selective deposition on an end portion of the vertical semiconductor channel. Alternatively, a backside semiconductor cap structure can be formed directly on a bottom surface of the vertical semiconductor channel by selective or non-selective deposition of a semiconductor material.

A semiconductor device includes a semiconductor substrate, a first transistor on the semiconductor substrate, an insulating layer above the semiconductor substrate in a first direction, a semiconductor layer provided on the insulating layer and partially overlapping the semiconductor substrate and the insulating layer in the first direction, a second transistor on the semiconductor layer, a first contact penetrating the insulating layer in the first direction such that the first contact is not in contact with the semiconductor layer, a second contact extending parallel to the first contact, and a memory cell array provided above the insulating layer and electrically connected to the second transistor through the second contact.

A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.

A method for manufacturing a semiconductor stack structure with ultra thin dies includes manufacturing a plurality of semiconductor wafers. A carrier board is bonded to the redistribution layer of one of the semiconductor wafers, then the second substrate part and the stop layer structure are removed to expose the first substrate part, and the wafer conductive structures are penetrated thereon and connected to the redistribution layer. By thinning the first substrate part, the wafer conductive structures are protruded, and a bonding dielectric layer is formed to cover the wafer conductive structures and is thinned to expose the wafer conductive structure. A bonding layer with conductive pillars is formed on the redistribution layer of another semiconductor wafer, and a die sawing is performed to form a plurality of batches of dies. The bonding layers of a batch of dies are bonded to the bonding dielectric layer by using hybrid bonding technology.

A semiconductor package includes a first semiconductor chip including a first substrate, a plurality of first pads disposed on a front surface of the first substrate, a first insulating layer surrounding the plurality of first pads, and a plurality of wiring patterns disposed between the first substrate and the plurality of first pads and electrically connected to the plurality of first pads; and a second semiconductor chip disposed below the first semiconductor chip and including a second substrate, a plurality of second pads disposed on the second substrate and contacting the plurality of first pads, a second insulating layer surrounding the plurality of second pads and contacting the first insulating layer, and a plurality of through-electrodes penetrating through the second substrate to be connected to the plurality of second pads. The plurality of wiring patterns include top wiring patterns adjacent to the plurality of first pads in a direction perpendicular to the front surface. On a plane parallel to the front surface, within a first region having a first shape and first region area from a top down view, first top wiring patterns have a first occupied area between adjacent first pads of a first group of first pads from among the plurality of first pads, and within a second region having the first shape and first region area from a top down view, second top wiring patterns have a second occupied area, larger than the first occupied area, between adjacent first pads of a second group of first pads from among the plurality of first pads. From a top down view, each pad of the first group of first pads has a first area, and each pad of the second group of first pads has a second area, wherein the first area is smaller than a second area.

A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.