Methods for fusion bonding semiconductor devices to temporary carrier wafers with cavity regions for reduced bond strength, and semiconductor device assemblies formed by the same

Abstract

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a cavity configured to entrap a gas during the formation of the bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

Claims

1. A method of making a semiconductor device assembly, the method comprising: providing a first semiconductor device having a first dielectric material at a first surface; providing a carrier wafer having a second dielectric material at a second surface; forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material, wherein the first surface includes a cavity configured to entrap a gas during the formation of the dielectric-dielectric bond; stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly; and removing the semiconductor device assembly from the carrier wafer.

2. The method of claim 1, wherein the first surface is an active surface of the first semiconductor device that further includes metal interconnects.

3. The method of claim 1, wherein the second surface includes a second cavity configured to entrap the gas during the formation of the dielectric-dielectric bond.

4. The method of claim 1, wherein the cavity has an area equal to at least 25% of a footprint of the first semiconductor device.

5. The method of claim 1, wherein the first surface further includes a second cavity.

6. A method of making a semiconductor device assembly, the method comprising: providing a first semiconductor device having a first dielectric material at a first surface; providing a carrier wafer having a second dielectric material at a second surface; forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material, wherein at least one of the first surface and the second surface includes a cavity configured to entrap a gas during the formation of the dielectric-dielectric bond; stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly; and removing the semiconductor device assembly from the carrier wafer, wherein removing the semiconductor device assembly from the carrier wafer includes increasing a pressure of the entrapped gas in the cavity.

7. The method of claim 6, wherein increasing the pressure of the entrapped gas in the cavity includes heating the entrapped gas in the cavity.

8. The method of claim 7, wherein heating the entrapped gas in the cavity includes providing power to a heater adjacent the cavity.

9. The method of claim 8, wherein the heater is formed in the first semiconductor device.

10. The method of claim 8, wherein the heater is formed in the carrier wafer.

11. The method of claim 6, wherein: the second surface includes the cavity, a channel is formed through the carrier wafer, and the method further comprising introducing the gas into the cavity.

12. The method of claim 11, wherein increasing the pressure of the entrapped gas comprises introducing the gas into the cavity such that the pressure of the entrapped gas is greater than a pressure of gasses surrounding the first semiconductor device.

13. The method of claim 12, wherein increasing the pressure of the entrapped gas further comprises heating the entrapped gas in the cavity concurrently with introducing the gas into the cavity.

14. The method of claim 6, wherein respective dielectric materials at respective surfaces of the one or more second semiconductor devices exclude cavities configured to entrap gas.

15. The method of claim 6, wherein: the second surface includes the cavity, and the first surface includes a mechanically-altered region corresponding to a location of the cavity on the second surface.

16. A method of processing a semiconductor device, the method comprising: providing the semiconductor device having a first dielectric material at a first surface; providing a carrier wafer having a second dielectric material at a second surface; forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material, wherein the first surface includes a cavity configured to entrap a gas during the formation of the dielectric-dielectric bond; performing wafer-level processing on the semiconductor device while the semiconductor device is bonded to the carrier wafer; and removing the semiconductor device from the carrier wafer.

17. The method of claim 16, wherein removing the semiconductor device from the carrier wafer includes heating the entrapped gas in the cavity.

18. The method of claim 17, wherein heating the entrapped gas in the cavity includes providing power to a heater adjacent the cavity.

19. The method of claim 18, wherein the heater is formed in the semiconductor device.

20. The method of claim 18, wherein the heater is formed in the carrier wafer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIGS. 1 through 4 are simplified schematic cross-sectional views of a semiconductor device attached to a carrier wafer in accordance with embodiments of the present technology.

(2) FIGS. 5 and 6 are simplified schematic plan views of a semiconductor device in accordance with embodiments of the present technology.

(3) FIGS. 7 through 15 are simplified schematic cross-sectional views of semiconductor device assemblies in various stages of manufacturing in accordance with embodiments of the present technology.

(4) FIG. 16 is a simplified schematic plan view of a semiconductor device assembly in accordance with embodiments of the present technology.

(5) FIGS. 17 and 18 are flow charts illustrating a method of making semiconductor devices and device assemblies in accordance with an embodiment of the present technology.

(6) FIG. 19 is a schematic view showing a system that includes a semiconductor device assembly configured in accordance with an embodiment of the present technology.

DETAILED DESCRIPTION

(7) The formation of many semiconductor device assemblies can involve temporarily bonding a chip to a carrier wafer (C2W) to enable wafer-level processing steps to be performed on semiconductor devices already singulated from another wafer (e.g., known good die) (KGD)). One challenge with temporarily bonding a semiconductor device is balancing the strength of the bond with the ease of subsequent removal. A bond that is too strong (e.g., a fusion or dielectric-dielectric bond between large facing regions of passivation material on surfaces of both the die and the carrier wafer) can interfere with removal of the die from the carrier wafer, potentially causing damage to the die, the carrier wafer, or both. A bond that is insufficiently strong (e.g., a temporary adhesive) can permit movement of the semiconductor device relative to the carrier wafer, potentially causing alignment issues or other processing challenges that can reduce yield. Moreover, adhesives can require subsequent cleaning steps that present their own challengescost, tooling compatibility, etc.

(8) To address these drawbacks and others, various embodiments of the present application provide improved approaches for temporarily bonding a semiconductor device to a carrier wafer. In this regard, embodiment of the present disclosure provide a method in which a dielectric-dielectric bond is formed between a first dielectric material at a first surface of a semiconductor device and a second dielectric material at a second surface of a carrier wafer, wherein at least one of the first surface and the second surface including a cavity configured to entrap a gas during the formation of the dielectric-dielectric bond. The cavity may be provided at the first surface of the semiconductor device, at the second surface of the carrier wafer, or both. The cavity reduces the area of the dielectric-dielectric bond between the semiconductor device and the carrier wafer, thereby reducing the force necessary to separate them.

(9) FIG. 1 is a simplified schematic cross-sectional view of a semiconductor device 110 attached to a carrier wafer 100 in accordance with embodiments of the present technology. As can be seen with reference to FIG. 1, the carrier wafer 100 includes a substrate 101 (e.g., silicon, glass, alumina, etc.) on which is formed a layer of dielectric material (e.g., SiO, SiO.sub.2, SiN, etc.). The semiconductor device 110 includes a substrate 112 (e.g., silicon) with dielectric layers 111 and 113 on opposing surfaces thereof. The semiconductor device 110 can further include contact pads 114 and 116 on opposing surfaces thereof, coupled by through-silicon vias 115, to facilitate stacking the semiconductor device 110 into an assembly with other similar devices. The semiconductor device 110 further includes one or more cavities 117 at the surface facing the carrier wafer 100. In accordance with various aspects of the present disclosure, the cavities may extend entirely through the dielectric layer 111 and expose the substrate 112 below, may extend partway through the dielectric layer 111 and not expose the substrate 112, or may alternatively be formed by a surface feature of the substrate 112 to which the dielectric layer 111 is conformal. While the dielectric layer 111 of the semiconductor device 110 and the dielectric layer 102 of the carrier wafer 100 are bonded together with a relatively strong dielectric-dielectric bond, the cavities 117 reduce the area of the bonded surfaces, and accordingly reduce the strength of the bond between the semiconductor device 110 and the carrier wafer.

(10) Although in the foregoing example embodiment, the cavities 117 are illustrated and described as being formed at a surface of the semiconductor device 110, in other embodiments a carrier wafer may instead include similar cavities. One such arrangement is shown in FIG. 2, in which a simplified schematic cross-sectional view of a semiconductor device 210 attached to a carrier wafer 200 is illustrated in accordance with embodiments of the present technology.

(11) As can be seen with reference to FIG. 2, the carrier wafer 200 includes a substrate 201 (e.g., silicon, glass, alumina, etc.) on which is formed a layer of dielectric material (e.g., SiO, SiO.sub.2, SiN, etc.). The semiconductor device 210 includes a substrate 212 (e.g., silicon) with dielectric layers 211 and 213 on opposing surfaces thereof. The semiconductor device 210 can further include contact pads 214 and 216 on opposing surfaces thereof, coupled by through-silicon vias 215, to facilitate stacking the semiconductor device 210 into an assembly with other similar devices. The carrier wafer 200 further includes one or more cavities 203 at the surface facing the semiconductor device 210. While the dielectric layer 211 of the semiconductor device 210 and the dielectric layer 202 of the carrier wafer 200 are bonded together with a relatively strong dielectric-dielectric bond, the cavities 203 reduce the area of the bonded surfaces, and accordingly reduce the strength of the bond between the semiconductor device 210 and the carrier wafer.

(12) According to one aspect of the present disclosure, the relative area of the cavities to areas where a dielectric bond is formed (e.g., in a non-interconnect area excluding the area of any metal contact pads facing the carrier wafer) may be selected based on a desired bond strength between a semiconductor die and a carrier wafer. For example, in various embodiments, the non-interconnect area (e.g., the area of the footprint of the semiconductor device exclusive of the area of the contact pads of the semiconductor device) may comprise more than 25% cavities, more than 33% cavities, more than 50% cavities, or even more than 67% cavities.

(13) According to another aspect of the present disclosure, gas (e.g., atmospheric air, environmental gasses present during the fusion bonding process, etc.) may be entrapped within a cavity between a semiconductor device and a carrier wafer, and be intentionally expanded by the application of heat during a de-bonding process to facilitate the removal of the semiconductor device from the carrier wafer. For example, the debonding process can be accompanied by the external application of heat (e.g., by performing the operation in an oven, or with the carrier wafer on a heated surface), or in other embodiments by the internal generation of heat. For example, an electric heater (e.g., exploiting the Joule/resistive heating effect) can be included in a semiconductor device (or in a carrier wafer) and coupled to an external power source to heat and expand the entrapped gas in a cavity during a de-bonding operation to reduce the external force required to separate a semiconductor device and a carrier wafer. FIG. 3 is a simplified schematic cross-sectional view of a semiconductor device attached to a carrier wafer in accordance with one such embodiment of the present technology.

(14) As can be seen with reference to FIG. 3 a carrier wafer 300 includes a substrate 301 (e.g., silicon, glass, alumina, etc.) on which is formed a layer of dielectric material (e.g., SiO, SiO.sub.2, SiN, etc.), and attached to the carrier wafer 300 is a semiconductor device 310 that includes a substrate 312 (e.g., silicon) with dielectric layers 311 and 313 on opposing surfaces thereof. The semiconductor device 310 can further include contact pads 314 and 316 on opposing surfaces thereof, coupled by through-silicon vias 315, to facilitate stacking the semiconductor device 310 into an assembly with other similar devices. The semiconductor device 310 further includes one or more cavities 317 at the surface facing the carrier wafer 300. In accordance with various aspects of the present disclosure, the cavities may extend entirely through the dielectric layer 311 and expose the substrate 312 below, may extend partway through the dielectric layer 311 and not expose the substrate 312, or may alternatively be formed by a surface feature of the substrate 312 to which the dielectric layer 311 is conformal. While the dielectric layer 311 of the semiconductor device 310 and the dielectric layer 302 of the carrier wafer 300 are bonded together with a relatively strong dielectric-dielectric bond, the cavities 317 do not form such a bond with the facing dielectric material, and accordingly reduce the strength of the bond between the semiconductor device 310 and the carrier wafer 300. The cavities 317 can entrap gasses during the bonding operation, whose expansion can be exploited during a de-bonding operation to facilitate removal of the semiconductor device 310 from the carrier wafer, and which can be heated to assist this effect by one or more on-die heaters 318. The heaters 318 can be coupled to an external power source (e.g., by one of the contact pads 316 dedicated to that circuit) and generate heat proximate the cavities 317 to expand the gasses in the cavities 317 and thereby impart a debonding force between the semiconductor device 310 and the carrier wafer 300.

(15) Additionally or alternatively, in accordance with another aspect of the present disclosure, cavities in a semiconductor device or in a carrier wafer that reduce the bonding area between the semiconductor device and the carrier wafer can be further connected to an external source of pressurized gasses, to similarly reduce the external force required to separate a semiconductor device and a carrier wafer. For example, FIG. 4 is a simplified schematic cross-sectional view of a semiconductor device attached to a carrier wafer in accordance with one such embodiment of the present technology.

(16) As can be seen with reference to FIG. 4, the carrier wafer 400 includes a substrate 401 (e.g., silicon, glass, alumina, etc.) on which is formed a layer of dielectric material (e.g., SiO, SiO.sub.2, SiN, etc.). The semiconductor device 410 includes a substrate 412 (e.g., silicon) with dielectric layers 411 and 413 on opposing surfaces thereof. The semiconductor device 410 can further include contact pads 414 and 416 on opposing surfaces thereof, coupled by through-silicon vias 415, to facilitate stacking the semiconductor device 410 into an assembly with other similar devices. The carrier wafer 400 further includes one or more cavities 403 at the surface facing the semiconductor device 410. While the dielectric layer 411 of the semiconductor device 410 and the dielectric layer 402 of the carrier wafer 400 are bonded together with a relatively strong dielectric-dielectric bond, the cavities 403 reduce the area of the bonded surfaces, and accordingly reduce the strength of the bond between the semiconductor device 410 and the carrier wafer.

(17) According to one aspect of the present disclosure, the relative area of the cavities to areas where a dielectric bond is formed (e.g., in a non-interconnect area excluding the area of any metal contact pads facing the carrier wafer) may be selected based on a desired bond strength between a semiconductor die and a carrier wafer. For example, in various embodiments, the non-interconnect area (e.g., the area of the footprint of the semiconductor device exclusive of the area of the contact pads of the semiconductor device) may comprise more than 25% cavities, more than 33% cavities, more than 50% cavities, or even more than 67% cavities.

(18) According to another aspect of the present disclosure, gas (e.g., atmospheric air, environmental gasses present during the fusion bonding process, etc.) may be introduced to the cavities 403 between a semiconductor device and a carrier wafer by channels 404 provided through the carrier wafer 400. By pressurizing the gases thus introduced during a de-bonding process, the removal of the semiconductor device from the carrier wafer may be facilitated (e.g., either by pressure alone, or in combination with applied by heaters in the semiconductor device 410 such as are illustrated above with reference to FIG. 3). For example, the debonding process can be accompanied by the external application of pressurized gasses in the cavities 403 (e.g., at a higher pressure than gasses surrounding the semiconductor device 410), such that a pressure differential between the cavity and the environment around the semiconductor device applies an expansive force that contributes to the de-bonding operation and reduces the external force required to separate a semiconductor device and a carrier wafer.

(19) FIGS. 5 and 6 are simplified schematic plan views of a semiconductor device in accordance with embodiments of the present technology, illustrating the relative arrangement of cavities, dielectric material configured to form a dielectric bond with a carrier wafer, and metal interconnects. Turning to FIG. 5, a plan view of a semiconductor device 510, similar to the semiconductor device 110 of FIG. 1, is illustrated in accordance with one embodiment of the present disclosure. The illustrated surface of semiconductor device 510 includes a dielectric layer 511 surrounding contact pads 514 (e.g., whose cumulative area may be referred to as the interconnect area, such that the remaining area of the footprint of the semiconductor device 510 is referred to as the non-interconnect area), and one or more cavities 517. The ratio of the area of the cavities 517 to the non-interconnect area is about 33% in the illustrated example, corresponding to about a 33% reduction in the strength of the dielectric-dielectric bond that would be formed by semiconductor device 510 with the dielectric surface of a carrier wafer like carrier wafer 100 of FIG. 1, relative to a semiconductor device that did not include such cavities 517.

(20) Turning to FIG. 6, a plan view of a semiconductor device 610, similar to the semiconductor device 110 of FIG. 1, is illustrated in accordance with one embodiment of the present disclosure. The illustrated surface of semiconductor device 610 includes a dielectric layer 611 surrounding contact pads 614 (e.g., whose cumulative area may be referred to as the interconnect area, such that the remaining area of the footprint of the semiconductor device 610 is referred to as the non-interconnect area), and one or more cavities 617. The ratio of the area of the cavities 617 to the non-interconnect area is about 25% in the illustrated example, such that bond strength is both reduced by about 25% (relative to a semiconductor device that did not include such cavities 617).

(21) According to various aspects of the present disclosure, the controllable strength of the bond between a carrier wafer and a semiconductor device provided by the foregoing approaches can facilitate the manufacture of semiconductor device assemblies. For example, FIGS. 7 through 15 provide simplified schematic cross-sectional views of semiconductor device assemblies in various stages of manufacturing in accordance with embodiments of the present technology. As can be seen with reference to FIG. 7, following the bonding of a semiconductor device 710 to a carrier wafer 700, with a bond strength mediated by one or more cavities 717 at the surface of the semiconductor device 710 (and/or at the surface of the carrier wafer 700), additional semiconductor devices 720, 730, and 740 can be stacked over (e.g., with hybrid bonding, where facing dielectric layers of each pair of devices form a dielectric-dielectric bond, and facing interconnect structures of each device form a metal-metal bond) the lower semiconductor device 710 to form a stack 750 of semiconductor devices. The stack 750 of semiconductor devices can at this stage be removed from the carrier wafer 700, as is illustrated in FIG. 8, leaving an assembly in which the stack has an exterior surface of an outermost semiconductor device (the lower semiconductor device 710 in FIG. 8) on which are formed one or more cavities 717 that are surrounded by a layer 711 of dielectric material.

(22) Alternatively, rather than removing the stack 750 as shown in FIG. 8, in another embodiment of the disclosure, the stack 750 can be attached to another temporary carrier wafer 900 (by a layer of adhesive 902 over the carrier substrate, as is shown in FIG. 9), and the first carrier wafer 700 can be removed to expose interconnects of the stack 750 for further processing (as shown in FIG. 10). This processing can involve the encapsulation of the stack 750 by an encapsulant material 1100 (e.g., mold resin) surrounding the sidewalls of the stack 750. The encapsulant material 1100 may also, optionally, fill the cavities 717 on the exposed surface of the bottom die of the stack 750. The processing can further include the formation of solder balls 110 (as shown in FIG. 11), followed by the singulation of the assembly 1200 from other assemblies on the carrier wafer (as is shown in FIG. 12). The singulated carrier wafer materials (substrate 901 and adhesive 902) can optionally be removed (as can, optionally, any encapsulant material 1100 in the cavities 717), as shown in FIG. 13, to provide an assembly 1300 with a smaller vertical dimension.

(23) Although in the foregoing examples, a second carrier wafer is described and illustrated as being attached to a semiconductor device by adhesive, in other embodiments a second carrier wafer could be bonded to a semiconductor device in a similar manner to that described above with reference to a first carrier wafernamely by a dielectric-dielectric bond mediated by one or more cavities on the second carrier wafer, the semiconductor device, or both.

(24) According to various aspects of the present disclosure, a semiconductor device may be bonded by a cavity-material-mediated dielectric-dielectric bond either at the active surface of the semiconductor device or at the back surface of the semiconductor device. For example, FIG. 14 illustrates a semiconductor device assembly 1400 in which an outermost semiconductor device 1410 of the assembly 1400 includes one or more cavities 1417 at a back surface of the semiconductor device (e.g., opposite the interconnects of the upper device in a stack which omits TSVs).

(25) Although in the foregoing examples, semiconductor device assemblies have been illustrated and described as including an outermost semiconductor device with an exterior surface on which are formed one or more cavities in a layer of dielectric material, in other embodiments in which cavities are provided only on a carrier wafer (e.g., carrier wafer 200 in FIG. 2), a semiconductor device assembly may instead include an outermost semiconductor device with an exterior surface having a layer of dielectric material with one or more mechanically-altered regions corresponding to the locations of the cavities on the carrier wafer to which the outermost semiconductor device was attached. In this regard, the mechanical alteration in these regions of the dielectric material may include different levels of surface roughness when compared to portions of the dielectric material outside of the mechanically-altered regions (e.g., having an Ra and/or a Rms value of more than 10% greater or lesser than, or more than 25% greater or less er than, or more than 50% greater or lesser than the portions outside of the mechanically-altered regions).

(26) For example, FIG. 15 illustrates a partial schematic cross-sectional view of a semiconductor device assembly 1500 in which an outermost semiconductor device 210 of the assembly 1500 includes one or more mechanically-altered regions 217 of dielectric material 211 at an outer surface of the semiconductor device. The mechanically-altered regions correspond to the regular polygonal or curvilinear shapes of the cavities of the carrier wafer (e.g., carrier wafer 200 in FIG. 2), and may have clearly-defined boundaries (e.g., where the Ra and/or Rms vary rapidly from one value to another over short distances on the order of 1 to 50 m).

(27) Although the mechanically-altered regions of semiconductor device assembly 1500 are illustrated as laterally-spaced apart from interconnect structures and surrounded by portions of dielectric material 211 that are not mechanically-altered, in other embodiments of the present disclosure other arrangements of mechanically-altered regions with other positions, shapes, sizes, and spatial relationships to interconnects and die edges may be implemented. For example, FIG. 16 illustrates a partial schematic plan view of a semiconductor device assembly 1600 in which the surface of a lowermost die in a stack includes a dielectric layer 611 with a single, large mechanically-altered region 1617 that extends to three of the four side surfaces of the bottommost die. Such an arrangement may correspond to a carrier wafer in which a large cavity overlaps the edge of the semiconductor device stacked thereof to facilitate easy debonding from one side edge thereof. In still other embodiments, one or more mechanically-altered regions may be located in an outer surface of a top-most semiconductor device in a stack (analogous to semiconductor device assembly 1400), surrounding one or more interconnects on the surface of the device, extending to different numbers of sidewalls, and/or provided with other shapes (regular or irregular polygons or curvilinear shapes).

(28) In accordance with one aspect of the present disclosure, the semiconductor devices illustrated in the assemblies of FIGS. 1-16 could be memory dies, such as dynamic random access memory (DRAM) dies, NOT-AND (NAND) memory dies, NOT-OR (NOR) memory dies, magnetic random access memory (MRAM) dies, phase change memory (PCM) dies, ferroelectric random access memory (FeRAM) dies, static random access memory (SRAM) dies, or the like. In an embodiment in which multiple dies are provided in a single assembly, the semiconductor devices could be memory dies of a same kind (e.g., both NAND, both DRAM, etc.) or memory dies of different kinds (e.g., one DRAM and one NAND, etc.). In accordance with another aspect of the present disclosure, the semiconductor dies of the assemblies illustrated and described above could be logic dies (e.g., controller dies, processor dies, etc.), or a mix of logic and memory dies (e.g., a memory controller die and a memory die controlled thereby).

(29) FIG. 17 is a flow chart illustrating a method of making a semiconductor device assembly. The method includes providing a first semiconductor device having a first dielectric material at a first surface (box 1710) and providing a carrier wafer having a second dielectric material at a second surface (box 1720). The method further includes forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material, wherein at least one of the first surface and the second surface includes a cavity configured to entrap a gas during the formation of the bond (box 1730). The method further includes stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly (box 1740) and removing the semiconductor device assembly from the carrier wafer (box 1750).

(30) FIG. 18 is a flow chart illustrating a method of making a semiconductor device assembly. The method includes providing a semiconductor device having a first dielectric material at a first surface (box 1810) and providing a carrier wafer having a second dielectric material at a second surface (box 1820). The method further includes forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material, wherein at least one of the first surface and the second surface includes a cavity configured to entrap a gas during the formation of the bond (box 1830). The method further includes performing wafer-level processing on the semiconductor device while the semiconductor device is bonded to the carrier wafer (box 1840) and removing the semiconductor device assembly from the carrier wafer (box 1850).

(31) Any one of the semiconductor devices and semiconductor device assemblies described above with reference to FIGS. 1-18 can be incorporated into any of a myriad of larger and/or more complex systems, a representative example of which is system 1900 shown schematically in FIG. 19. The system 1900 can include a semiconductor device assembly (e.g., or a discrete semiconductor device) 1902, a power source 1904, a driver 1906, a processor 1908, and/or other subsystems or components 1910. The semiconductor device assembly 1902 can include features generally similar to those of the semiconductor devices described above with reference to FIGS. 1-16. The resulting system 1900 can perform any of a wide variety of functions, such as memory storage, data processing, and/or other suitable functions. Accordingly, representative systems 1900 can include, without limitation, hand-held devices (e.g., mobile phones, tablets, digital readers, and digital audio players), computers, vehicles, appliances and other products. Components of the system 1900 may be housed in a single unit or distributed over multiple, interconnected units (e.g., through a communications network). The components of the system 1900 can also include remote devices and any of a wide variety of computer readable media.

(32) Specific details of several embodiments of semiconductor devices, and associated systems and methods, are described above. A person skilled in the relevant art will recognize that suitable stages of the methods described herein can be performed at the wafer level or at the die level. Therefore, depending upon the context in which it is used, the term substrate can refer to a wafer-level substrate or to a singulated, die-level substrate. Furthermore, unless the context indicates otherwise, structures disclosed herein can be formed using conventional semiconductor-manufacturing techniques. Materials can be deposited, for example, using chemical vapor deposition, physical vapor deposition, atomic layer deposition, plating, electroless plating, spin coating, and/or other suitable techniques. Similarly, materials can be removed, for example, using plasma etching, wet etching, chemical-mechanical planarization, or other suitable techniques.

(33) The devices discussed herein, including a memory device, may be formed on a semiconductor substrate or die, such as silicon, germanium, silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In some cases, the substrate is a semiconductor wafer. In other cases, the substrate may be a silicon-on-insulator (SOI) substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layers of semiconductor materials on another substrate. The conductivity of the substrate, or sub-regions of the substrate, may be controlled through doping using various chemical species including, but not limited to, phosphorous, boron, or arsenic. Doping may be performed during the initial formation or growth of the substrate, by ion-implantation, or by any other doping means.

(34) The functions described herein may be implemented in hardware, software executed by a processor, firmware, or any combination thereof. Other examples and implementations are within the scope of the disclosure and appended claims. Features implementing functions may also be physically located at various positions, including being distributed such that portions of functions are implemented at different physical locations.

(35) As used herein, including in the claims, or as used in a list of items (for example, a list of items prefaced by a phrase such as at least one of or one or more of) indicates an inclusive list such that, for example, a list of at least one of A, B, or C means A or B or C or AB or AC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase based on shall not be construed as a reference to a closed set of conditions. For example, an exemplary step that is described as based on condition A may be based on both a condition A and a condition B without departing from the scope of the present disclosure. In other words, as used herein, the phrase based on shall be construed in the same manner as the phrase based at least in part on.

(36) As used herein, the terms vertical, lateral, upper, lower, above, and below can refer to relative directions or positions of features in the semiconductor devices in view of the orientation shown in the Figures. For example, upper or uppermost can refer to a feature positioned closer to the top of a page than another feature. These terms, however, should be construed broadly to include semiconductor devices having other orientations, such as inverted or inclined orientations where top/bottom, over/under, above/below, up/down, and left/right can be interchanged depending on the orientation.

(37) It should be noted that the methods described above describe possible implementations, and that the operations and the steps may be rearranged or otherwise modified and that other implementations are possible. Furthermore, embodiments from two or more of the methods may be combined.

(38) From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the scope of the invention. Rather, in the foregoing description, numerous specific details are discussed to provide a thorough and enabling description for embodiments of the present technology. One skilled in the relevant art, however, will recognize that the disclosure can be practiced without one or more of the specific details. In other instances, well-known structures or operations often associated with memory systems and devices are not shown, or are not described in detail, to avoid obscuring other aspects of the technology. In general, it should be understood that various other devices, systems, and methods in addition to those specific embodiments disclosed herein may be within the scope of the present technology.