A heater includes a base body and an internal conductor. The base body is made of ceramic. The internal conductor is located inside the base body and includes a connection portion. The base body includes a space extending from the connection portion to a lower surface of the base body. The space includes a first space and a second space. The first space contacts with the connection portion. The second space connects the first space and an outer side of the lower surface of the base body, and is smaller than the first space in a planar perspective of the lower surface of the base body.

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

A method of manufacturing a semiconductor element includes: forming a first semiconductor layer (SL1) and a second semiconductor layer (SL2) larger in thickness than the first semiconductor layer (SL1) on a mask layer (ML) including a first opening portion (K1) and a second opening portion (K2); forming a first device layer (DL1) and a second device layer (DL2); and bonding the first device layer (DL1) and the second device layer (DL2) to a support substrate (SK).

A method of manufacturing a semiconductor device having first and second main surfaces opposite to each other. The method includes: forming a first electrode at the first main surface of the semiconductor wafer; applying a first tape to the second main surface of the semiconductor wafer; forming roughness at a portion of a surface of the first tape; applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, with the roughness formed thereon, at the second main surface of the semiconductor wafer, to cover a portion of the first main surface of the semiconductor wafer, and to cover a side surface of the semiconductor wafer; heating the semiconductor wafer after the first and second tapes are applied; and subsequently forming a plated film at the surface of the first electrode by a plating treatment.

An electrostatic chuck is provided. Implemented according to an embodiment of the present invention is an electrostatic chuck comprising: a silicon nitride sintered body; a surface modification layer covering at least a portion of the external surface of the silicon nitride sintered body and having corrosion resistance and plasma resistance; and an electrostatic electrode laid inside the silicon nitride sintered body. Therefore, the electrostatic chuck includes a ceramic sintered body of silicon nitride, and thus has excellent plasma resistance, chemical resistance, and thermal shock resistance while exhibiting an equivalent or similar level of heat dissipation performance compared to ceramic sintered bodies of aluminum nitride that have been conventionally widely used, so that the electrostatic chuck can be widely used in semiconductor processes.

An electrostatic chuck member includes: a base body wherein one main surface thereof is a placement surface on which a plate-shaped sample is placed; and an electrostatic adsorption electrode provided on a side opposite to the placement surface or in the base body, in which a side peripheral surface that is continuous to the placement surface in the base body includes at least a first curved surface that is a convex surface and is provided in a circumferential direction in a peripheral portion of the placement surface and a second curved surface that is provided in the circumferential direction at a different height position from the first curved surface.

A retention substrate includes: a plate-shaped member having a first surface and a second surface and containing a ceramic material as a main component, the first surface for retaining an object, the second surface disposed opposite to the first surface; a gas channel formed in the plate-shaped member; and a gas-permeable porous body filling part of the gas channel and containing a ceramic material as a main component. The gas channel including a vertical channel section and a horizontal channel section. The vertical channel section having a gas outlet opening in the first surface and extending from the gas outlet toward the second surface. The horizontal channel section connected to the vertical channel section and extending parallel to the first surface. The porous body filling the vertical channel section and forming a space adjacent to the second surface and inside the horizontal channel section.

A bonded body has a piezoelectric material substrate 11, a support substrate 13 bonded to the piezoelectric material substrate, and an outer peripheral processed part in which outer peripheral parts of the piezoelectric material substrate 11 and the support substrate 13 are inclined with respect to a main surface of the piezoelectric material substrate 11. The outer peripheral processed part includes a first inclined surface that is a surface that the piezoelectric material substrate 11 faces, and a second inclined surface that is on a plane extending from the first inclined surface toward the outer peripheral part and that is a surface that the support substrate 13 faces. Consequently, a bonded body in which no corners are formed on the outer peripheral part and fracture and cracks are less likely to occur in the outer peripheral part in subsequent steps, and a method for producing a bonded body are provided.

A process includes acquiring temperature data indicating a temperature of a substrate placed on the substrate stage and temperature data indicating a temperature of the coolant, calculating, based on the acquired temperature data indicating the temperature of the substrate and the acquired temperature data indicating the temperature of the coolant, a thermal resistance of a heat conduction site on a heat transfer path from the substrate to the coolant, and calculating a heat flux to the substrate for each of a plurality of steps of a process recipe defining a substrate processing to be performed on the substrate. The process also includes calculating, based on the calculated thermal resistance and the calculated heat flux, an offset value to be added to a set temperature of the coolant for each of the steps.

According to the technique of the present disclosure, there is provided a substrate processing apparatus capable of improving thickness uniformity of a film formed on each substrate. The apparatus includes a substrate retainer; a reaction tube; a vertical driver for moving the substrate retainer into or out of the reaction tube; a heater provided around the reaction tube; a gas supplier having a plurality of gas feeders corresponding to a plurality of substrates, respectively, supported by the substrate retainer; an exhauster through which a gas is exhausted from the reaction tube; and a controller capable of controlling the vertical driver and the gas supplier such that the gas is capable of being supplied through the plurality of gas feeders while maintaining a relative position of a substrate with respect to a gas feeder corresponding thereto at a first position or at a second position different from the first position.