A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

An apparatus, system and method for a carrier suitable to carry a circuit board through a semiconductor underfill process. The apparatus, system and method includes a modular carrier capable of supporting a printed circuit board during at least an underfill process, the modular carrier comprising: an outer frame having, at least about a center point thereof, at least one open aspect; and at least one frame inset suitable to be removably placed within the at least one open aspect, and capable of supporting at least a first type of the printed circuit board.

A method of preparing a structured substrate of interest including the following steps: providing a substrate of interest including a thin film, onto which a protective layer has been bonded by direct bonding, depositing a resin, and etching the thin film and a portion of the support substrate through openings in the resin, to form pads, bonding a temporary substrate to the substrate of interest, then separating them, whereby the protective layer is separated from the substrate of interest, the resin being removed prior to the bonding step or during the separation, the protective layer/thin film adhesion energy being lower than the temporary substrate/protective layer adhesion energy or than the resin/protective layer adhesion energy.

A polyimide precursor composition according to an exemplary embodiment includes an imide precursor having an organic group derived from a cyclic ether group-containing compound. A polyimide film formed using the polyimide precursor composition has improved heat resistance and mechanical properties, and has high absorbance in a wavelength range in an ultraviolet region.

A semiconductor wafer is diced along a plurality of dicing lines in a first direction and a second direction different from the first direction so that a chip is cut out from an effective area. The semiconductor water includes a film formation pattern. At least one dicing line included in the plurality of dicing lines is an on-pattern dicing line which overlaps the film formation pattern in its entire or partial length.

A method of forming a semiconductor structure is provided. Two wafers are first bonded by oxide bonding. Next, the thickness of a first wafer is reduced using an ion implantation and separation approach, and a second wafer is thinned by using a removal process. First devices are formed on the first wafer, and a carrier is then attached over the first wafer, and an alignment process is performed from the bottom of the second wafer to align active regions of the second wafer for placement of the second devices with active regions of the first wafer for placement of the first devices. The second devices are then formed in the active regions of the second wafer. Furthermore, a via structure is formed through the first wafer, the second wafer and the insulation layer therebetween to connect the first and second devices on the two sides of the insulation layer.

A semiconductor package includes a first redistribution structure including a first redistribution layer; a semiconductor chip on a first surface of the first redistribution structure and including a connection pad electrically connected to the first redistribution layer; an encapsulant that surrounds at least a portion of the semiconductor chip; a second redistribution structure on the encapsulant and including a second redistribution layer; a through-via structure that extends through the encapsulant and electrically connects the first redistribution layer to the second redistribution layer; an organic material layer between the through-via structure and the encapsulant and having an elongation rate greater than an elongation rate of the encapsulant; and a bump structure on a second surface of the first redistribution structure.

A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270 C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25 C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270 C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25 C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

The invention relates to a method for the temporary bonding of a product substrate with a carrier substrate and for the debonding of a product substrate from a carrier substrate, corresponding devices and a substrate stack.