A semiconductor device is provided, which is configured to improve the adhesion between the resin part and the leads without interfering with proper operation of the semiconductor device. The semiconductor device includes a semiconductor element 1, a first lead 2 including a first pad portion 21, a second lead 3 including a second pad portion 31, a conductor member 61, and a resin part 8. The first pad portion 21 has a first-pad obverse surface 21a including a first smooth region 211 to which an element reverse surface 1b is bonded, and a first rough region 212 spaced apart from the semiconductor element 1 as viewed in z direction and has a higher roughness than the first smooth region 211. The second pad portion 31 has a second-pad obverse surface 31a including a second smooth region 311 to which a second bonding portion 612 is bonded, and a second rough region 312 spaced apart from the second bonding portion 612 as viewed in z direction and has a higher roughness than the second smooth region 311.

A semiconductor device includes a substrate having a first surface, a second surface, and an opening; a semiconductor device layer having a third surface and a fourth surface; a heat transfer member; source electrodes disposed on a fourth surface; and electrically conductive vias that penetrate the semiconductor device layer and a diamond layer to electrically connect the source electrodes to a metal layer. The heat transfer member includes the diamond layer and the metal layer, the diamond layer covers a bottom surface and an inner wall surface of the opening, and the metal layer is disposed on the diamond layer.

A semiconductor module, including a semiconductor chip, a sealed main body portion sealing the semiconductor chip and having a pair of attachment holes penetrating therethrough, a heat dissipation plate in contact with the sealed main body portion. The heat dissipation plate is positioned between the attachment holes in a plan view of the semiconductor module. The semiconductor module further includes a pair of rear surface supporting portions and/or a pair of front surface supporting portions protruding respectively from rear and front surfaces of the sealed main body portion. In the plan view, the heat dissipation plate is formed between the pair of attachment holes, which are in turn between the pair of rear surface supporting portions. The pair of front surface supporting portions are formed substantially between the pair of attachment holes in the plan view.

A package construction includes: a die pad, and a suspension lead remaining portion connected to the die pad. Here, an offset portion is provided from a peripheral edge portion of the die pad to the suspension lead remaining portion. Also, the suspension lead remaining portion has: a first end portion connected to the die pad, and a second end portion opposite the first end portion. Further, the second end portion of the suspension lead remaining portion is exposed from the side surface of the sealing body at a position spaced apart from each of the upper surface and the lower surface.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of 30 to 30 with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is 30 to 30.

A semiconductor device includes: a plurality of semiconductor elements connected in parallel; a rectifier element connected in anti-parallel to the plurality of semiconductor elements; a power terminal electrically connected to the plurality of semiconductor elements; and an electrical conductor electrically connected to the power terminal and the plurality of semiconductor elements and including a pad portion to which the plurality of semiconductor elements are bonded. The plurality of first semiconductor elements include a first element and a second element. The minimum conduction path of the first element to the power terminal is shorter than the minimum conduction path of the second element to the power terminal. The pad portion includes a first section to which the first element is bonded and a second section to which the second element is bonded. The rectifier element is located in the first section of the pad portion.

A method for manufacturing a light emitting device includes: preparing a first substrate having an upper surface comprising an element placement region; placing a light emitting element in the element placement region; disposing an uncured, sheet-like light-transmissive member on the light emitting element and bringing an outer edge of a lower surface of the light-transmissive member into contact with an outer upper surface of the element placement region of the first substrate by pressing the light-transmissive member; and disposing a first protrusion portion along an outer edge of an upper surface of the light-transmissive member so that the first protrusion portion extends over the upper surface of the first substrate and the upper surface of the light-transmissive member.

A semiconductor device includes a semiconductor layer that includes a semiconductor substrate having a first thickness and has a main surface, a main surface electrode that is arranged at the main surface and has a second thickness less than the first thickness, and a pad electrode that is arranged on the main surface electrode and has a third thickness exceeding the first thickness.

In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

A semiconductor device includes semiconductor elements. Each semiconductor element, including first, second and third electrodes, is controlled to turn on and off current flow between the first electrode and the second electrode by drive signals inputted to the third electrode. The first electrodes of the semiconductor elements are electrically connected mutually, and the second electrodes of the semiconductor elements are electrically connected mutually. The semiconductor device further includes a control terminal receiving the drive signals, a first wiring section connected to the control terminal, a second wiring section, and third wiring sections, and further a first connecting member electrically connecting the first and the second wiring sections, a second connecting member electrically connecting the second wiring section and each third wiring section, and third connecting members connecting the third wiring sections and the third electrodes of the semiconductor elements.