Examples of the present application provide a semiconductor structure and a fabrication method thereof, relate to the field of semiconductor chip technologies, and aim to stack more device layers in a semiconductor structure and in turn increase the number of the device layers packaged in the semiconductor structure. The semiconductor structure provided by an example of the present application includes a plurality of stack layers that are stacked and a first bonding structure, wherein two adjacent stack layers are connected together through the first bonding structure; the stack layer includes a plurality of device layers that are stacked and a second bonding structure with two adjacent device layers connected through the second bonding structure. After connecting device layers together through the second bonding structure, the thickness of the device layers can be reduced.

Embodiments provide a fabricating method, a semiconductor structure, and a semiconductor device. The method includes: providing a plurality of chips, each of the chips includes an element region and a scribe line region arranged in a first direction; stacking the chips to form a chip module, where a stacking direction of the chips is a second direction perpendicular to the first direction, the element regions of the chips are overlapped with each other, and the scribe line regions of the chips are overlapped with each other; planarizing a side surface of each of the scribe line regions distant from the element region after the chip module is formed, to remove at least part of the scribe line regions and expose the power supply wiring layer; and forming a pad on the side surface planarized, where the pad is connected to the power supply wiring layer.

A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.

A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

The present disclosure is directed to embodiments of a conductive structure on a conductive barrier layer that separates the conductive structure from a conductive layer on which the conductive barrier layer is present. A gap or crevice extends along respective surfaces of the conductive structure and along respective surfaces of one or more insulating layers. The gap or crevice separates the respective surfaces of the one or more insulating layers from the respective surfaces of the conductive structure. The gap or crevice provides clearance in which the conductive structure may expand into when exposed to changes in temperature. For example, when coupling a wire bond to the conductive structure, the conductive structure may increase in temperature and expand into the gap or crevice. However, even in the expanded state, respective surfaces of the conductive structure do not physically contact the respective surfaces of the one or more insulating layers.

A method is described. The method includes creating a partial through-substrate via (TSV) plug in a front side of a wafer, the partial TSV having a front side and a back side. The back side of the partial TSV extending toward a front side of a substrate but not into a bulk of the substrate. A cavity is etched in a back side of the wafer that exposes the partial TSV plug. An insulator is applied to the etched back side of the wafer. A portion of the partial TSV plug is exposed by removing a portion of the insulator. A conductive material is deposited to connect the exposed, partial TSV plug to a surface on the back side of the wafer.

A display module is disclosed. The display module includes a substrate; a plurality of inorganic light-emitting diodes provided in a plurality of mounting grooves formed in the substrate, the plurality of inorganic light-emitting diodes including an inorganic light-emitting diode that has a first chip electrode and a second chip electrode; a first substrate electrode pad and a second substrate electrode pad provided at a bottom surface of a mounting groove from among the plurality of mounting grooves, the first substrate electrode pad being electrically coupled to the first chip electrode and the second substrate electrode pad being electrically coupled to the second chip electrode; and a third substrate electrode pad and a fourth substrate electrode pad provided around the mounting groove.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A semiconductor device according to some embodiments includes a semiconductor die, and a bond pad on a first side of the semiconductor die for receiving a wire bond. The bond pad includes a discontinuous uppermost surface opposite the first side of the semiconductor die.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.