A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A semiconductor package, includes: a base chip having a front surface and a back surface opposite to the front surface, the base chip including bump pads, wafer test pads, and package test pads, disposed on the front surface; connection structures disposed on the front surface of the base chip and connected to the bump pads; and semiconductor chips stacked on the back surface of the base chip, wherein each of the wafer test pads is smaller than the package test pads.

A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first nitride-containing layer on a side of a carrier substrate, first semiconductor devices thermally coupled to the first nitride-containing layer, a first interconnect structure physically and electrically coupled to first sides of the first semiconductor devices, and a first metal-containing dielectric layer bonding the first nitride-containing layer to the first interconnect structure. A thermal conductivity of the first nitride-containing layer is greater than a thermal conductivity of the first metal-containing dielectric layer.

The technology relates to a system on chip (SoC). The SoC may include a plurality of network layers which may assist electrical communications either horizontally or vertically among components from different device layers. In one embodiment, a system on chip (SoC) includes a plurality of network layers, each network layer including one or more routers, and more than one device layers, each of the plurality of network layers respectively bonded to one of the device layers. In another embodiment, a method for forming a system on chip (SoC) includes forming a plurality of network layers in an interconnect, wherein each network layer is bonded to an active surface of a respective device layer in a plurality of device layer.

A microelectronic structure with through substrate vias (TSVs) and method for forming the same is disclosed. The microelectronic structure can include a bulk semiconductor with a via structure. The via structure can have a first and second conductive portion. The via structure can also have a barrier layer between the first conductive portion and the bulk semiconductor. The structure can have a second barrier layer between the first and second conductive portions. The second conductive portion can extend from the second barrier layer to the upper surface of the bulk semiconductor. The microelectronic structure containing TSVs is configured so that the microelectronic structure can be bonded to a second element or structure.

A microelectronic device including an isolation device. The isolation device includes a lower isolation element, an upper isolation element, and an inorganic dielectric plateau between the lower isolation element and the upper isolation element. The inorganic dielectric plateau contains an upper etch stop layer and a lower etch stop layer between the upper isolation element and the lower isolation element. The upper etch stop layer provides an end point signal during the plateau etch process which provides feedback on the amount of inorganic dielectric plateau which has been etched. The lower etch stop layer provides a traditional etch stop function to provide for a complete plateau etch and protection of an underlying metal bond pad. The inorganic dielectric plateau also contains alternating layers of high stress and low stress silicon dioxide, which provide a means of reinforcement of the inorganic dielectric plateau.

Disclosed is an integrated circuit device. In some aspects, a device includes a first wafer including a first dielectric layer, a first set of bonding pads disposed in the first dielectric layer and a first circuit disposed on the first dielectric layer, and a second wafer including a second dielectric layer, a second set of bonding pads disposed in the second dielectric layer and a second circuit disposed on the second dielectric layer. The device further includes through-vias including at least one power via in the second wafer, and a backside power distribution network (BSPDN) layer disposed on the second wafer. The first set of bonding pads is bonded with the second set of bonding pads.

An image sensor device includes capacitor structures in multiple semiconductor dies of the image sensor device. The capacitor structures may be located on a frontside of the sensor die, on a frontside of an application specific integrated circuit (ASIC) die directly bonded to the sensor die, and on a backside of the ASIC die, among other examples. Including capacitor structures on the frontside and on the backside of the ASIC die enables more efficient use of the die area of the ASIC die for integration of the capacitor structures, which may enable the density of capacitor structures in the image sensor device to be increased without sacrificing area on the sensor die for the photodiodes of the pixel sensors.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.