The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device includes a first substrate comprising a front side and a back side parallel to the front side; a bonding dielectric positioned on the front side of the first substrate; a redistribution layer positioned between the bonding dielectric and the front side of the first substrate; a first dielectric layer positioned between the front side of the first substrate and the redistribution layer; a capping layer positioned between the redistribution layer and the bonding layer; a first conductive pad positioned between the capping layer and the bonding layer; a second dielectric layer positioned between the capping layer and the bonding layer, wherein a surface of the second dielectric layer is coplanar with a surface of the first conductive pad; and a conductive feature positioned in the bonding dielectric and the first conductive pad.

A semiconductor package may include a base chip, a semiconductor chip stack including a plurality of semiconductor chips sequentially stacked on the base chip, a plurality of connection bumps below the base chip, and an encapsulant covering a side surface of the first semiconductor chip and side surfaces of each of the plurality of second semiconductor chips on the base chip, wherein, on at least one side of the semiconductor chip stack, the encapsulant includes a portion in which a width thereof in a horizontal direction increases as the encapsulant being away from the base chip in a vertical direction.

A nonvolatile memory device includes first and second semiconductor layers. The first semiconductor layer includes wordlines extending in a first direction, bitlines extending in a second direction, and a memory cell array connected to the wordlines and the bitlines. The second semiconductor layer is beneath the first semiconductor layer in a third direction, and includes a substrate and an address decoder on the substrate. The address decoder controls the memory cell array, and includes pass transistors connected to the wordlines, and drivers control the pass transistors. In the second semiconductor layer, the drivers are arranged by a first layout pattern along the first and second directions, and the pass transistors are arranged by a second layout pattern along the first and second directions. The first layout pattern is different from the second layout pattern, and the first layout pattern is independent of the second layout pattern.

According to one aspect of the present disclosure, a memory apparatus is provided. The memory apparatus may include a first memory die and a die group stacked in a first direction. The die group may include M second memory dies stacked in the first direction. Each of the second memory dies may be connected to a third memory die and configured to perform data exchange at a bandwidth of (N*X) bits with the third memory die through N data channels. The first memory die may be connected to the third memory die. The first memory die may be configured to perform data exchange at a bandwidth of (N*X) bits with the third memory die through N data channels. The first memory die may be configured to replace a first data channel of the die group when a storage portion corresponding to the first data channel fails.

A semiconductor structure and semiconductor device are provided. The semiconductor structure includes a plurality of layers of memory modules stacked on an upper surface of the logic chip in a first direction which is perpendicular to the upper surface of the logic chip. Each storage module includes a plurality of memory chips stacked in a second direction which is parallel to the upper surface. Each memory chip in a top layer includes one second wireless communication part; and each memory chip in a non-top layer includes two second wireless communication parts arranged in the first direction and a wired communication part connected between the two second wireless communication parts. Two adjacent second wireless communication parts located on different memory chips in the first direction communicate with each other wirelessly; and each first wireless communication part communicates wirelessly with a closest second wireless communication part in a bottom memory chip.

A double-sided cooling package for a double-sided, bi-directional junction transistor can include a double-sided, bi-directional, junction transistor chip with an individual, double-sided, bi-directional power switch (collectively, a DSTA). The DSTA can be sandwiched between heat sinks. Each heat sink can include a direct plating copper (DPC) structure, a direct copper bonding (DCB) structure or a direct aluminum bond (DAB) structure. In addition, each heat sink can have opposed first and second copper layers on a substrate, and copper contacts that extend from a respective second copper layer through vias in each substrate to an exterior of the cooling package.

An example semiconductor device includes a substrate having a first surface and a second surface opposite each other, a logic block provided on the first surface of the substrate, a power delivery network including power lines connected to the logic block on the second surface of the substrate, and a connection structure penetrating the substrate and connecting an upper chip pad and a lower chip pad, wherein at least one of the upper chip pad or the lower chip pad may vertically overlap the logic block, and the connection structure may include a through conductive pattern that is horizontally spaced apart from the logic block and penetrates the substrate.

A chip structure provided herein includes a bridge structure including an interconnect bridge, a dielectric layer laterally surrounding the interconnect bridge and through dielectric vias extending from a top of the dielectric layer to a bottom of the dielectric layer, wherein a thickness of the interconnect bridge is identical to a height of each of the through dielectric vias; semiconductor dies disposed on the bridge structure, wherein each of the semiconductor dies overlaps both the interconnect bridge and the dielectric layer and is electrically connected to the interconnect bridge and at least one of the through dielectric vias; and a die support, the semiconductor dies being disposed between the die support and the bridge structure, wherein a sidewall of the die support is coplanar with a sidewall of the bridge structure.

A semiconductor device is disclosed. The semiconductor device may include a package substrate, a plurality of semiconductor chips stacked on the package substrate, each of the semiconductor chips having a first side surface, and a first conductive film, which is electrically connected to the package substrate and is extended to a region on the first side surfaces of the semiconductor chips. Each of the semiconductor chips may include a peripheral circuit structure including first bonding pads on a first surface of a substrate, a first cell array structure including a first stack and second bonding pads bonded to the first bonding pads, and a first input/output pad disposed on the first side surface and electrically connected to the first conductive film.

A semiconductor chip and a semiconductor package are disclosed. The semiconductor chip includes a device layer having a semiconductor device disposed on a front side of a substrate, and a first through via extending in a first direction intersecting the front side of the substrate and penetrating the substrate and at least a portion of the device layer. The first through via includes a first front side part that penetrates the front side of the substrate and at least a portion of the device layer, and a first back side part that is located in the substrate, connected to the first front side part, and positioned closer to a back side of the substrate than the first front side part. A width of the first back side part is greater than a width of the first front side part, thereby alleviating electrical resistance.