A semiconductor device includes a transistor layer including a semiconductor substrate and gate structures on an upper surface of the semiconductor substrate, an upper substrate on the transistor layer, an upper wiring layer disposed between the transistor layer and the upper substrate and including upper conductive lines, a bonding layer between the upper wiring layer and the upper substrate, and a lower wiring layer disposed on a lower surface of the semiconductor substrate and including lower conductive lines. The transistor layer is disposed between the lower wiring layer and the upper wiring layer. The bonding layer includes a material having higher thermal conductivity than silicon oxide, and a dopant concentration of the upper substrate is lower than a dopant concentration of the semiconductor substrate.

The present disclosure provides a packaging device and a method to form the packaging device. The packaging device includes a package base, a die structure disposed over the package base, and a package lid over the die structure. The package lid is thermally coupled with the die structure and the package base.

A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.

Provided are high quality metal-nitride, such as aluminum nitride (AlN), films for heat dissipation and heat spreading applications, methods of preparing the same, and deposition of high thermal conductivity heat spreading layers for use in RF devices such as power amplifiers, high electron mobility transistors, etc. Aspects of the inventive concept can be used to enable heterogeneously integrated compound semiconductor on silicon devices or can be used in in non-RF applications as the power densities of these highly scaled microelectronic devices continues to increase.

An object is to provide a semiconductor module capable achieving both a heat radiation property and an insulation property. A semiconductor module includes: a substrate having a main surface and a main surface on a side opposite to the main surface; a semiconductor device mounted on the main surface; and a heat sink attached to the main surface via an insulation sheet having a thermal conductivity, wherein the substrate includes a through hole passing from the main surface to the main surface, the semiconductor device includes a plurality of electrodes exposed from a surface facing the main surface and a protrusion formed between the plurality of electrodes to be inserted through the through hole, and the insulation sheet is formed so that a length in a thickness direction of the substrate is larger than a length of a tip end portion of the protrusion protruding from the through hole.

The present invention discloses an elastic heat spreader for chip packaging, a packaging structure and a packaging method. The heat spreader includes a top cover plate and a side cover plate that extends outward along an edge of the top cover plate, wherein the top cover plate is configured to be placed on a chip, and at least a partial region of the side cover plate is an elastic member; and the elastic member at least enables the side cover plate to be telescopic in a direction perpendicular to the top cover plate. According to the present invention, a following problem is solved: delamination between the heat spreader and a substrate as well as the chip due to stress generated by different thermal expansion coefficients of the substrate, the heat spreader and the chip in a packaging process of a large-size product.

A heat sink includes a channel including a gyroid structure portion having a non-uniform thickness.

A microelectronic device package includes: a package substrate having a first set of leads spaced from a first die pad configured for mounting semiconductor devices, and a second set of leads spaced from a second die pad configured for mounting additional semiconductor devices, the first die pad and the first set of leads spaced from the second die pad and the second set of leads. Semiconductor devices are mounted to the first die pad and second die pad. A ceramic interposer is mounted to the package substrate in thermal contact with at least the first die pad. Mold compound covers the semiconductor devices, a portion of the ceramic interposer, and portions of the first set and the second set of leads.

A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.

A two-part curable composition which cures to form a thermally conductive cured product, including: (a) a first part including: (1) at least one metal catalytic component for catalyzing the cure reaction; (2) a non-reactive diluent component; (3) a wetting agent component; (4) a filler component; (5) a rheology modifier component; and (6) a pigment component; and (b) a second part including: (1) at least one silane terminated polyurethane polymer; (2) a moisture scavenger; (3) a non-reactive diluent component; (4) a filler component; and (5) a wetting agent component, wherein at least one of the filler components of the first-part and the second-part comprises a thermally conductive filler.