A method includes removing an oxide layer from select areas of a surface of a metal structure of a lead frame to create openings that extend through the oxide layer to expose portions of the surface of the metal structure. The method further includes attaching a semiconductor die to the lead frame, performing an electrical connection process that electrically couples an exposed portion of the surface of the metal structure to a conductive feature of the semiconductor die, enclosing the semiconductor die in a package structure, and separating the electronic device from the lead frame. In one example, the openings are created by a laser ablation process. In another example, the openings are created by a chemical etch process using a mask. In another example, the openings are created by a plasma process.

A method of forming a lead frame can include: providing a frame base; providing a substrate to support the frame base; and selectively etching the frame base to form first and second type pins. The first type pins are distributed in the central area of the lead frame, and the second type of the pins are distributed in the edge area of the lead frame. The first type pins are separated from the second type of the pins, and the first and second type pins are not connected by connecting bars. A pattern of a first surface of the first and second type pins is different from that of a second surface of the first and second type pins. The metal of the first surface is different from the metal of the second surface, and the second surface is opposite to the first surface.

A method of forming one or more semiconductor packages includes mounting one or more semiconductor dies on the metal strip such that the one or more semiconductor dies are in a flip chip arrangement whereby terminals of the one or more semiconductor dies face the upper surface of the metal strip, forming an electrically insulating encapsulant material on the upper surface of the metal strip that encapsulates the one or more semiconductor dies, and forming package terminals that are electrically connected with the terminals of the one or more semiconductor dies, wherein the package terminals are formed from the metal strip or from metal that is deposited after removing the metal strip.

A stacked transistor arrangement and process of manufacture thereof are provided. Switched electrodes of first and second transistor chips are accessible on opposite sides of the first and second transistor chips. The first and second transistor chips are stacked one on top of the other. Switched electrodes of adjacent sides of the transistor chips are coupled together by a conductive layer positioned between the first and second transistor chips. Switched electrodes on sides of the first transistor chip and the second transistor chip that are opposite the adjacent sides are coupled to a lead frame by bond wires or solder bumps.

Embodiments of present invention provide a semiconductor structure. The structure includes a device die including a device layer; a back-end-of-line (BEOL) structure on a frontside of the device layer and a frontside substrate attached to the BEOL structure; and a backside power distribution network (BSPDN) structure on a backside of the device layer and a backside substrate attached to the BSPDN structure; and a device package including a base element and a lid element, wherein the device die is attached to the base element of the device package through multiple C4 bumps at the frontside substrate and is attached to the lid element of the device package at the backside substrate. A method of forming the same is also provided.

A described example includes: a passive component die mounted to a device side surface of a semiconductor device die, and extending away from the device side surface of the semiconductor device die; the semiconductor device die and the passive component die flip chip mounted to a device mounting surface of a package substrate including a cavity extending into the package substrate from the device mounting surface of the package substrate, the cavity in a position corresponding to the passive component die, the passive component die extending into the cavity of the package substrate, and the package substrate having terminals on a board side surface; and mold compound covering the semiconductor device die, the passive component die, and the device mounting surface of the package substrate, the mold compound forming the body of a microelectronic device package, the terminals of the package substrate forming terminals of the microelectronic device package.

A semiconductor package contains a first semiconductor die, electrically coupled to a plurality of leads around a perimeter of the semiconductor package via a molded interconnect. The molded interconnect comprises a plurality of embedded interconnects in a first mold compound which electrically couple the plurality of bond pads of the first semiconductor die to the plurality of leads of the semiconductor package. The molded interconnect may have a greater cross-sectional area at a given pitch compared to a similar wire bonded semiconductor package and allow advantageous thermal management of the semiconductor package compared to other electrical coupling techniques. The molded interconnect may allow small high-power integrated circuits to be packaged with a package footprint which is smaller than would otherwise be available.

A MEMS pressure sensor packaged with a molding compound. The MEMS pressure sensor features a lead frame, a MEMS semiconductor die, a second semiconductor die, multiple pluralities of bonding wires, and a molding compound. The MEMS semiconductor die has an internal chamber, a sensing component, and apertures. The MEMS semiconductor die and the apertures are exposed to an ambient atmosphere. A method is desired to form a MEMS pressure sensor package that reduces defects caused by mold flashing and die cracking. Fabrication of the MEMS pressure sensor package comprises placing a lead frame on a lead frame tape; placing a MEMS semiconductor die adjacent to the lead frame and on the lead frame tape with the apertures facing the tape and being sealed thereby; attaching a second semiconductor die to the MEMS semiconductor die; attaching pluralities of bonding wires to form electrical connections between the MEMS semiconductor die, the second semiconductor die, and the lead frame; and forming a molding compound.

A semiconductor device and a method of forming a semiconductor device are provided. The semiconductor device includes a first die, a diamond layer and an encapsulant. The diamond layer is disposed on the first die. The encapsulant is disposed on the first die, wherein the encapsulant encapsulates the diamond layer.

A method includes providing an interposer structure including conductive paths, forming micro bumps over the interposer structure and connected to the conductive paths, bonding a first die and a second die onto the micro bumps, forming a molding compound over and around the first die and the second die, performing a planarization process to expose a top surface of the second die, forming a trench in the molding compound to expose a top surface of the first die, forming a thermal interface material (TIM) layer in the trench and over the top surface of the second die, bonding the interposer structure to a substrate, and attaching a heat sink onto the TIM layer. The first die has a first height and the second die has a second height greater than the first height.