A chip package assembly includes a first high-power chip, a second low-power chip, a thermal cooling device and a heterogeneous thermal interface material (HTIM). The thermal cooling device may overlie the first chip and the second chip. The HTIM includes a first thermal interface material (TIM) and a second TIM. The first TIM overlies the first chip, and the second TIM overlies the second chip. The first TIM includes a material that has a first thermal conductivity and a first modulus of elasticity. The first TIM can reflow when the first die reaches a first TIM reflow temperature. The second TIM comprises at least a polymer material. The second TIM has a second modulus of elasticity that is greater than the first modulus of elasticity and a second thermal conductivity that is less than the first thermal conductivity.

A package structure includes a first substrate, a second substrate disposed on the first substrate, a third substrate disposed on the second substrate, and multiple chips mounted on the third substrate. A second coefficient of thermal expansion (CTE) of the second substrate is less than a first CTE of the first substrate. The third substrate includes a first sub-substrate, a second sub-substrate in the same level with the first sub-substrate, a third sub-substrate in the same level with the first sub-substrate. A CTE of the first sub-substrate, a CTE of the second sub-substrate, and a CTE of the third sub-substrate are less than the second CTE of the second substrate.

A chip is assembled on an interconnection substrate. A heat dissipation layer made of a thermal interface material is deposited on the chip. A cap is bonded to the substrate with the cap covering the chip and the heat dissipation layer contacting with the cap. An element made of an adhesive material or a solderable material is formed on the chip prior to depositing the heat dissipation layer, or formed on the cap prior to bonding the cap. The element is thus in contact with the cap and with the chip and positioned next to the heat dissipation layer.

A heat conduction sheet includes a heat conduction layer containing at least one kind of graphite particles (A) selected from the group consisting of scale-like particles, ellipsoidal particles and rod-like particles, wherein in a case of scale-like particles, a plane direction of the particle is oriented in a thickness direction of the heat conduction sheet, and in a case of ellipsoidal particles or rod-like particles, a long axis direction of the particle is oriented in the thickness direction of the heat conduction sheet, and the heat conduction sheet contains a metal component having a melting point of 200 C. or less.

A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.

A thermal substrate includes a multilayer film, a first conductive layer adhered to the first outer layer of the multilayer film and a second conductive layer adhered to the second outer layer of the multilayer film. The multilayer film includes a first outer layer including a first thermoplastic polyimide, a core layer including a polyimide and a second outer layer including a second thermoplastic polyimide. The multilayer film has a total thickness in a range of from 5 to 150 m, and the first outer layer, the core layer and the second outer layer each include a thermally conductive filler. The first conductive layer and the second conductive layer each have a thickness in a range of from 250 to 3000 m.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

Semiconductor three-dimensional integrated circuit packages and methods of forming the same are disclosed herein. A method includes bonding a semiconductor chip package to a substrate and depositing a thermal interface material on the semiconductor chip package. A thermal lid may be placed over and adhered to the semiconductor chip package by the thermal interface material. The thermal lid includes a wedge feature interfacing the thermal interface material. The thermal lid may be adhered to the semiconductor chip package by curing the thermal interface material.

A semiconductor package includes: a first semiconductor chip on a first package substrate; a second semiconductor chip on a second package substrate; an interposer between the first semiconductor chip and the second package substrate; and a heat dissipation layer on the interposer, wherein the first and second semiconductor chips are spaced apart from each other horizontally and do not overlap in a vertical direction, and wherein a first portion of the heat dissipation layer at least partially overlapping the first semiconductor chip in the vertical direction and a second portion of the heat dissipation layer at least partially overlapping the second semiconductor chip in the vertical direction are spaced apart from each other, and the first portion is positioned around an outer boundary of the second portion.

Some implementations described herein a provide a multi-die package and methods of formation. The multi-die package includes a dynamic random access memory integrated circuit die over a system-on-chip integrated circuit die, and a heat transfer component between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, which may correspond to a dome-shaped structure, may be on a surface of the system-on-chip integrated circuit die and enveloped by an underfill material between the system-on-chip integrated circuit die and the dynamic random access memory integrated circuit die. The heat transfer component, in combination with the underfill material, may be a portion of a thermal circuit having one or more thermal conductivity properties to quickly spread and transfer heat within the multi-die package so that a temperature of the system-on-chip integrated circuit die satisfies a threshold.