H10W40/251

SUBSTRATE PACKAGE
20260047433 · 2026-02-12 · ·

A semiconductor package may include at least one semiconductor chip including a lower surface, an upper surface and connection pads, the lower surface facing the substrate, the upper surface opposite to the lower surface, the connection pads being on the upper surface; bonding wires electrically connecting the connection pads to the interconnection; an adhesive film having a first surface, a second surface, and fillers, the first surface in contact with the lower surface of the at least one semiconductor chip, the second surface opposite to the first surface, the fillers oriented in a vertical direction between the first surface and the second surface; and connection bumps below the substrate and electrically connected to the interconnection, wherein the adhesive film has stripe patterns defined by the fillers and extend from the first surface to the second surface, and the stripe patterns are spaced apart from each other in a horizontal direction.

Package chip having a heat sink and method for manufacturing package chip

A packaged chip and a method for manufacturing the packaged chip are provided. The packaged chip includes a substrate, a chip, and a heat sink. The heat sink includes a first bracket, a second bracket, and a cover. The first bracket and the second bracket are disposed on the substrate. The cover is supported on the substrate by the first bracket and the second bracket. The first bracket is a sealed annular bracket. The first bracket and the cover encircle a first space. The chip is accommodated in the first space. A thermal interface material is disposed between the chip and the cover. A hole connected to the first space is provided on the cover. The hole and the first space are filled with a filling material. The second bracket is located outside the first space.

Method for producing silver particles, thermosetting resin composition, semiconductor device, and electrical and/or electronic components
12544830 · 2026-02-10 · ·

Provided is a thermosetting resin composition containing: (A) silver particles including secondary particles having an average particle size from 0.5 to 5.0 m, the secondary particles being formed by aggregation of primary particles having an average particle size from 10 to 100 nm; and (B) a thermosetting resin.

Elastic heat spreader for chip package, package structure and packaging method

The present invention discloses an elastic heat spreader for chip packaging, a packaging structure and a packaging method. The heat spreader includes a top cover plate and a side cover plate that extends outward along an edge of the top cover plate, wherein the top cover plate is configured to be placed on a chip, and at least a partial region of the side cover plate is an elastic member; and the elastic member at least enables the side cover plate to be telescopic in a direction perpendicular to the top cover plate. According to the present invention, a following problem is solved: delamination between the heat spreader and a substrate as well as the chip due to stress generated by different thermal expansion coefficients of the substrate, the heat spreader and the chip in a packaging process of a large-size product.

Conformal power delivery structures near high-speed signal traces

Technologies for conformal power delivery structures near high-speed signal traces are disclosed. In one embodiment, a dielectric layer may be used to keep a power delivery structure spaced apart from high-speed signal traces, preventing deterioration of signals on the high-speed signal traces due to capacitive coupling to the power delivery structure.

Method of manufacturing semiconductor device, thermally conductive sheet, and method of manufacturing thermally conductive sheet
12550730 · 2026-02-10 · ·

A method of manufacturing a semiconductor device includes: adhering together a heat generating body and a heat dissipating body via a thermally conductive sheet by applying a pressure on the heat generating body and the heat dissipating body in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150 C., and a tack strength of 5.0 N.Math.mm or more at 25 C.

Semiconductor package and method

A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Semiconductor package with stiffener structure and method of manufacturing the same

A semiconductor package includes a first component, a second component, and a stiffener rib. The first component is disposed on a substrate. The second component is disposed aside the first component and on the substrate. The stiffener rib is disposed between the first component and the second component. The lid is attached to the stiffener rib, the first component and the second component. The lid includes a recess portion on the stiffener rib. A first sidewall and a second sidewall of the recess portion laterally surround the stiffener rib. A first top space between a first top sidewall of the stiffener rib and the first sidewall of the recess portion is greater than a second top space between a second top sidewall of the stiffener rib and the second sidewall of the recess portion.

THERMALLY CONDUCTIVE POTTING MATERIALS
20260035577 · 2026-02-05 ·

A thermally conductive silicone-based potting composition is provided that exhibits a thermal conductivity of at least 3 W/m*K and a low viscosity across a shear range. The composition is dispensable and curable to a form-stable condition.

Cooling structure

A cooling structure includes a flow path-forming member that forms a flow path for a refrigerant to pass through, wherein: the flow path-forming member includes, on a basal inner wall thereof, a cooling fin installation section provided with at least one cooling fin projecting from the basal inner wall toward an inner side of the flow path, the cooling fin installation section being disposed separately from side inner walls of the flow path-forming member; and the flow path-forming member includes, on a side inner wall thereof, at least one obstacle projecting from the side inner wall toward the inner side of the flow path.