The invention provides a semiconductor structure, which comprises a chip comprising a substrate, wherein the substrate has a front surface and a back surface, and the front surface of the substrate comprises a circuit layer, the back surface of the substrate comprises a plurality of microstructures, and a thermal interface material located on the back surface of the substrate, and the thermal interface material contacts the microstructures directly.

A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is bonded over the substrate. The lid structure is bonded over the substrate and thermally coupled to the package structure, wherein the lid structure includes a fluid chamber and a plurality of spring members disposed in the fluid chamber, wherein each of the plurality of spring members is connected between an upper plate and a lower plate of the fluid chamber.

A semiconductor module arrangement comprises a substrate (10), a base plate or heat sink (30), and a layer (40) arranged between the substrate (10) and the base plate or heat sink (30), wherein the layer (40) comprises a liquid or viscous thermal interface material, TIM, (42) a plurality of filler particles (44) distributed within the liquid or viscous thermal interface material, TIM, (42) and a plurality of capsules (46) distributed within the liquid or viscous thermal interface material, TIM, (42) wherein each of the plurality of capsules (46) comprises a catalyst, or radical initiator, and the plurality of capsules (46) are configured to release the catalyst, or radical initiator when being activated, wherein the plurality of capsules (46) are configured to be activated at increased temperatures or under increased pressure.

A package structure and a method for manufacturing the same, and an electronic device are provided. The package structure includes a substrate, a chip stack, a heat dissipation layer, and a molding layer. The chip stack is disposed on the substrate, the heat dissipation layer is disposed on the chip stack, and the molding layer is disposed on the substrate and covers the chip stack. The molding layer is in contact with the heat dissipation layer, the molding layer and the heat dissipation layer are coplanar, and the thermal conductivity coefficient of the plastic encapsulating layer is less than the thermal conductivity coefficient of the heat dissipation layer.

A thermal interface film is used between a semiconductor die and a heat sink. The thermal interface film includes at least two layers, a first layer with vertically oriented graphite and a second layer with horizontally oriented graphite. The thermal interface film directs heat away from the semiconductor die both upwards and outwards, spreading the heat over a larger surface area more quickly.

A thermal interface layer includes pluralities of first and second particles dispersed in a polymeric binder at a total loading V in a range of about 40 volume percent to about 70 volume percent. The first and second particles have different compositions. The first particles include one or more of iron or nickel. The second particles include one or more of aluminum, magnesium, silicon, copper, or zinc. The thermal interface layer has a thermal conductivity in a thickness direction of the thermal interface layer in units of W/mK of at least K=5.10.17 V+0.002 V.sup.2.

A heat conductive sheet having excellent adhesion between an acrylic resin layer and a supporting sheet is provided. The heat conductive sheet includes a heat conductive resin layer including a heat conductive acrylic resin composition; and a supporting resin layer (supporting sheet) containing a polyvinyl acetal resin and a styrene-vinyl isoprene block copolymer. Crosslinking of the supporting sheet with acrylic monomers of the acrylic heat conductive resin layer enables improvements in adhesion between the heat conductive resin layer and the supporting sheet.

A semiconductor package may include a first redistribution substrate, a semiconductor chip on the first redistribution substrate, a mold layer provided on the first redistribution substrate to cover the semiconductor chip, a capping layer on the mold layer, a conductive post horizontally spaced apart from the semiconductor chip to penetrate the capping layer and the mold layer, and a second redistribution substrate provided on the capping layer and electrically connected to the conductive post. A thermal conductivity of the mold layer may be higher than a thermal conductivity of the capping layer.

A package structure includes a first substrate, a second substrate disposed on the first substrate, a third substrate disposed on the second substrate, and multiple chips mounted on the third substrate. A second coefficient of thermal expansion (CTE) of the second substrate is less than a first CTE of the first substrate. The third substrate includes a first sub-substrate, a second sub-substrate in the same level with the first sub-substrate, a third sub-substrate in the same level with the first sub-substrate. A CTE of the first sub-substrate, a CTE of the second sub-substrate, and a CTE of the third sub-substrate are less than the second CTE of the second substrate.

A semiconductor device assembly that includes carbon nanofibers (CNFs) for heat dissipation has a CNF layer. Molding compound encapsulates the CNF layer to form an encapsulated CNF layer. The molding compound extends between individual adjacent CNFs within the encapsulated CNF layer, and upper edges of at least a portion of individual CNFs within the encapsulated CNF layer are exposed along an upper surface of the encapsulated CNF layer. The upper surface of the CNF layer is removably attached to a bottom surface of a carrier wafer.