A semiconductor package includes a first substrate having a first surface and a second surface, and having a cavity extending from the first surface to the second surface in a vertical direction, a first chip disposed in the cavity of the first substrate, a redistribution structure on the first surface of the first substrate, a second chip on the redistribution structure, a third chip spaced apart from the second chip in a horizontal direction and disposed on the redistribution structure, and a bridge chip embedded in the redistribution structure, wherein the redistribution structure includes a first redistribution pattern, a second redistribution pattern, and a third redistribution pattern.

A semiconductor package including two different adhesives and a method of forming are provided. The semiconductor package may include a package component having a semiconductor die bonded to a substrate, a first adhesive over the substrate, a heat transfer layer on the package component, and a lid attached to the substrate by a second adhesive. The first adhesive may encircle the package component and the heat transfer layer. The lid may include a top portion on the heat transfer layer and the first adhesive, and a bottom portion attached to the substrate and encircling the first adhesive. A material of the second adhesive may be different from a material of the first adhesive.

A method of making an inverter comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A package structure and a method for manufacturing the same, and an electronic device are provided. The package structure includes a substrate, a chip stack, a heat dissipation layer, and a molding layer. The chip stack is disposed on the substrate, the heat dissipation layer is disposed on the chip stack, and the molding layer is disposed on the substrate and covers the chip stack. The molding layer is in contact with the heat dissipation layer, the molding layer and the heat dissipation layer are coplanar, and the thermal conductivity coefficient of the plastic encapsulating layer is less than the thermal conductivity coefficient of the heat dissipation layer.

The present invention provides compositions, including die attach adhesives, coatings and underfill materials, which are useful in electronics packaging and the composite fields. Specifically, the invention provides liquid and very low melting epoxy-maleimide compositions that co-cure upon the addition of an anionic cure catalyst in the absence of any other cure catalyst.

A method for manufacturing sinter bonding film, includes: preparing a resin formulation; preparing a metal filler mixture; mixing the resin formulation and the metal filler mixture, thereby preparing a paste for film manufacturing; and manufacturing a sinter bonding film by using the paste for film manufacturing. The metal filler mixture includes a metal powder and a reducing agent, copper metal (Cu) corresponds to respective particles in the metal powder, and the surface of the respective particles in the metal powder undergoes acid treatment or non-treatment.

Die attach materials are provided. In one example, the die-attach material includes a plurality of core-shell particles. Each core-shell particle includes a core and a shell on the core. The core includes a conducting material. The shell includes a metal nitride.

A manufacturing method of a chip package, performing a coupling of first and second interconnecting layers between one or more top dies and one or more bottom dies via hybrid copper bonding; depositing a material to at least partially cover the second interconnecting layer; thinning a second surface of the one or more top dies, wherein both the one or more top dies and the material define a continuous surface; coupling a first surface of a support die to the second surface of at least one of the one or more top dies; thinning a second surface of at least one of the one or more bottom dies; and coupling the second surface of at least one of the one or more bottom dies to a plurality of microbumps.

A self-densifying interconnection is formed between a high-temperature semiconductor device selected from a GaN or SiC-based device and a substrate. The interconnection includes a matrix of micron-sized silver particles in an amount from approximately 10 to 60 weight percent; the micron-sized silver particles having a particle size ranging from approximately 0.1 microns to 15 microns. Bonding particles are used to chemically bind the matrix of micron-sized silver particles. The bonding particles are core silver nanoparticles with in-situ formed surface silver nanoparticles chemically bound to the surface of the core silver nanoparticles and, at the same time, chemically bound to the matrix of micron-sized silver particles. The bonding particles have a core particle size ranging from approximately 10 to approximately 100 nanometers while the in-situ formed surface silver nanoparticles have a particle size of approximately 3-9 nanometers.

An anisotropic conductive film includes conductive particles disposed in an insulating resin layer. Zigzag arrangements are arranged at a predetermined pitch in an x direction on an xy plane in a plan view of the anisotropic conductive film with positions thereof in a y direction being periodically altered. The zigzag arrangements each include an arrangement Rb and an arrangement Rc repeatedly provided at predetermined intervals in the y direction. The arrangement Rb includes the conductive particles arranged at a positive inclination, and the arrangement Rc includes the conductive particles arranged at a negative inclination. This configuration can form a pseudo random regular disposition.