A semiconductor substrate includes a substrate and a plurality of electronic components. The substrate defines a cavity. A total number of the electronic components is N, the electronic components are divided into M groups, M and N are positive integers, and M is smaller than N. The electronic components in each group are encapsulated by a first insulation layer to form a respective component module. Each of the component modules is disposed in the cavity. A second insulation layer fills the cavity and encapsulates the component modules.

A storage device includes a substrate of a memory package and a first memory die. The substrate includes a controller and a first pin pad, the first pin pad being electrically connected to the controller and defining a data channel for data communications. The first memory die includes a front pin pad electrically connected to the first pin pad of the substrate by way of a first bond wire, a rear pin pad, a redistribution layer electrically connecting the front pin pad and the rear pin pad of the first memory die, and a plurality of memory cells configured to provide non-volatile storage accessible by way of the data channel.

A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a low-k dielectric layer over the second dielectric layer, a second dielectric layer on the high resistance layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

An electric fuse element has a first portion, a second portion arranged on one end of the first portion, and a third portion arranged on the other end of the first portion. A resistor element is arranged separately from the electric fuse element. A material of each of the electric fuse element and the resistor element has silicon metal or nickel chromium. The electric fuse element and the resistor element are arranged in an upper layer of the first wiring and in lower layer of the second wiring. A wiring width of the second portion and a wiring width of the third portion are larger than a wiring width of the first portion.

A semiconductor component for a memory device is provided. The semiconductor component comprises a first active region extending in a first direction; a second active region extending in the first direction; a first conductive layer disposed across the first active region and the second active region, in a second direction substantially perpendicular to the first direction; a second conductive layer extending in the first direction; and a first conductive via connecting the first conductive layer and the second conductive layer.

A method includes forming first and second TFR contacts spaced apart in a dielectric region, forming a dielectric barrier layer over the TFR contacts, and removing a region of the dielectric barrier layer to define an opening defining a pair of lateral edges of the dielectric barrier layer extending between the first and second TFR contacts. An etch is performed through the opening to define a TFR cavity including respective undercut cavity regions extending laterally below the dielectric barrier layer near each of the lateral edges. A TFR material is deposited in the TFR cavity to define a TFR element layer including (a) a TFR element base defining a pair of end edges adjacent the first and second TFR contacts, and a pair of side edges extending between the end edges; and (b) a pair of TFR element end ridges extending upwardly from the end edges of TFR element base.

An integrated circuit device includes a first interconnect layer, and a conductive first interconnect feature and a conductive second interconnect feature laterally separated by a body of insulating or semiconductor material. In an example, the first and second interconnect features are above the first interconnect layer. The integrated circuit device further includes a non-conductive feature above and on the first interconnect feature, and a conductive third interconnect feature above and on the second interconnect feature. The integrated circuit device also includes a second interconnect layer above the non-conductive feature and third interconnect features. In an example, the second and third interconnect features conductively couple the first and second interconnect layers.

A plurality of SRAM cells include: a first SRAM cell; and a second SRAM cell aligned with the first SRAM cell in a first direction. In the first SRAM cell, lines corresponding to bit lines BLB and BL, respectively, are formed in an M1 interconnect layer that is a metal interconnect layer. In the second SRAM cell, lines corresponding to bit lines BLB and BL, respectively, are formed in a BM0 interconnect layer which is an interconnect layer on the back of a transistor.

A semiconductor device includes a plurality of first gate structures arranged along a first direction and extending in a second direction, at least one first gate structure of the plurality of first gate structures corresponding to a first transistor region; a plurality of second gate structures arranged along the first direction and aligned with ones of the first gate structures in the second direction, at least one second gate structure of the plurality of second gate structures corresponding to a second transistor region; an insulating structure extending in the second direction and separating the plurality of first gate structures from the plurality of second gate structures; and a first conductive via in the insulating structure and configured to carry a signal for the first transistor region.

A method and an electronic device that includes an isolation structure having a dielectric material on or in a semiconductor surface layer, and a passive circuit component having a metal silicide structure on a side of the isolation structure, there the metal silicide structure includes a metal silicide portion and a dielectric portion, the dielectric portion of the metal silicide structure including one of silicon nitride, silicon oxide, silicon carbide, silicon carbon nitride, and silicon oxynitride. The method includes forming a dielectric material of the isolation structure on or in the semiconductor surface layer, forming a silicon-rich dielectric layer on a side of the isolation structure, and siliciding the silicon-rich dielectric layer to form the metal silicide structure on the side of the isolation structure.