A microfluidic transfer substrate includes a transfer area and a liquid droplet input area. The transfer area includes a plurality of pixel groups. Each pixel group includes at least three first pixel units. One first pixel unit of each pixel group serves as a first microfluidic pixel and a surface of the first microfluidic pixel defines an assembly groove. The plurality of pixel groups include first color pixel groups, second color pixel groups, and third color pixel groups. The liquid droplet input area includes a first color liquid droplet input area, a second color liquid droplet input area, and a third color liquid droplet input area, which are configured to generate and transport liquid droplets containing a first color light-emitting element, a second color light-emitting element, and a third color light-emitting element to the transfer area, respectively. A method for transferring the light-emitting elements is further provided.

A mass transfer device includes at least one transfer cavity. Each transfer cavity is configured to accommodate a plurality of micro light-emitting diodes. Each transfer cavity includes a bottom plate and a cavity wall connecting the bottom plate. The bottom plate defines a plurality of through holes spaced apart from each other. The transfer cavity is used to transfer the plurality of micro light-emitting diodes to the array substrate of a display panel through the plurality of through holes.

A method of manufacturing a light-emitting unit includes disposing a plurality of light-emitting diode (LED) chips on a carrier, wherein gaps are between the LED chips. The method includes forming a film on the LED chips and the carrier, and transferring at least one of the LED chips onto a first substrate, wherein the film is disconnected in the gaps adjacent to the at least one LED chip during the transferring the at least one of the LED chips onto the first substrate.

Embodiments include packages and methods for forming packages which include interposers having a substrate made of a dielectric material. The interposers may also include a redistribution structure over the substrate which includes metallization patterns which are stitched together in a patterning process which includes multiple lateral overlapping patterning exposures.

Integrated circuit structures having deep via structures, and methods of fabricating integrated circuit structures having deep via structures, are described. For example, an integrated circuit structure includes a plurality of horizontally stacked nanowires. A gate structure is over the plurality of horizontally stacked nanowires. An epitaxial source or drain structure is at an end of the plurality of horizontally stacked nanowires. A conductive trench contact structure is vertically over the epitaxial source or drain structure. A conductive via is vertically beneath and extends into the conductive trench contact structure. The conductive via has a first width beneath the epitaxial source or drain structure less than a second width laterally adjacent to the epitaxial source or drain structure.

The present invention relates to an ultra-thin light-emitting diode (LED) electrode assembly, a manufacturing method of the ultra-thin LED electrode assembly, and a transfer film of an ultra-thin LED used for manufacturing the ultra-thin LED electrode assembly and relates to an ultra-thin LED electrode assembly in which a plurality of LED elements are simultaneously transferred using a laser-assisted multi-chip transfer printing method to form and pattern the LED elements, thereby preventing process defects caused by omission of the LED elements during transfer and deviation thereof from an electrode line, and defects such as dark spots caused in an LED display, a manufacturing method of the ultra-thin LED electrode assembly, and a transfer film of an ultra-thin LED used for manufacturing the ultra-thin LED electrode assembly.

A detachment chamber for detaching a piezoelectric layer from a piezoelectric donor substrate includes at least one chuck having at least one electrode configured to apply an electric field to the piezoelectric donor substrate to detach the piezoelectric layer from the piezoelectric donor substrate.

A light emitting display including a circuit board, a plurality of light emitting devices arranged on the circuit board each including a first, LED stack, a second LED stack, and a third LED stack, a bump pad disposed between the circuit board and the light emitting device, the bump pad comprising Au material, and an encapsulating layer comprising an optical interference preventing material and covering the light emitting devices, in which the circuit board includes an interconnection line and a plurality of pads disposed on an upper surface thereof to provide electrical connection, the first, second, and third LED stacks are stacked in a vertical direction, one of the LED stacks configured to emit light having the longest wavelength among the first, second, and third LED stacks is in ohmic contact with the Au material, and the bump pad has an irregular upper surface.

A method includes positioning a discrete component assembly on a support fixture of a component transfer system, the discrete component assembly including a dynamic release tape including a flexible support layer, and a dynamic release structure disposed on the flexible support layer, and a discrete component adhered to the dynamic release tape. The method includes irradiating the dynamic release structure to release the discrete component from the dynamic release tape.

A method of manufacturing a semiconductor element includes: forming a first semiconductor layer (SL1) and a second semiconductor layer (SL2) larger in thickness than the first semiconductor layer (SL1) on a mask layer (ML) including a first opening portion (K1) and a second opening portion (K2); forming a first device layer (DL1) and a second device layer (DL2); and bonding the first device layer (DL1) and the second device layer (DL2) to a support substrate (SK).